Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Abstract: A semiconductor substrate stage for carrying a substrate is provided. The semiconductor substrate stage includes a base layer, a magnetic shielding layer disposed on the base layer, a carrier layer disposed on the magnetic shielding layer, a receiver disposed on the carrier layer, a storage layer disposed between the base layer and the magnetic shielding layer, and a magnetic shielding element disposed on the carrier layer and surrounding the receiver.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: In order to prevent long down-time that occurs with unexpected material depletion, an Inline Tin Stream Monitor (ITSM) system precisely measures the tin amount introduced by an in-line refill system and precisely estimates remaining runtime by measuring pressure level changes before and after in-line refill.

Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Abstract: A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.

Abstract: Some implementations described herein incorporate a heating system to heat a cover of a bucket. A liquified target material, collected by vanes and/or a transport ring within a vessel of an extreme ultraviolet (EUV) radiation source, flows through a drain port of the transport ring and through a conduit that provides the liquified target material to the bucket through an opening of the cover. By heating the cover, the heating system prevents the liquified target material from solidifying at or near the opening before the liquified target material can flow into the bucket. By preventing the solidifying of the liquid target material, a likelihood of a blockage within the conduit and/or the drain port is reduced.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

Abstract: A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.

Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.

Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.

Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.

Abstract: A semiconductor substrate stage for carrying a substrate is provided. The semiconductor substrate stage includes a base layer, a magnetic shielding layer disposed on the base layer, a carrier layer disposed on the magnetic shielding layer, and a receiver disposed on the carrier layer. The receiver is configured to receive a microwave signal from a signal source electrically isolated from the receiver, and the microwave signal is used for controlling the movement of the semiconductor substrate stage.

Abstract: An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed.

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.