Patents by Inventor Shang-Ying Tsai

Shang-Ying Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11923331
    Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: March 5, 2024
    Inventors: Wei-Jhih Mao, Kuei-Sung Chang, Shang-Ying Tsai
  • Publication number: 20240021567
    Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.
    Type: Application
    Filed: August 7, 2023
    Publication date: January 18, 2024
    Inventors: Wei-Jhih Mao, Kuei-Sung Chang, Shang-Ying Tsai
  • Publication number: 20240021485
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a circuit board, a semiconductor die disposed on the circuit board, a support structure disposed on the circuit board and surrounding the semiconductor die, and a lid disposed over the semiconductor die and on the support structure. The lid has a window opening penetrating through the lid and exposing at least a portion of the semiconductor die. The window opening is configured to receive a light of an incident direction, and the incident direction is at an angle to the upper surface of the protrusion portion, so that the light hitting on the upper surface of the protrusion portion is reflected.
    Type: Application
    Filed: July 12, 2022
    Publication date: January 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Sung Chang, Wen-Tuan Lo, Shang-Ying Tsai
  • Publication number: 20230382720
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) package comprising a wire-bond damper. A housing structure overlies a support substrate, and a MEMS structure is between the support substrate and the housing structure. The MEMS structure comprises an anchor, a spring, and a movable mass. The spring extends from the anchor to the movable mass to suspend and allow movement of the movable mass in a cavity between the support substrate and the housing structure. The wire-bond damper is on the movable mass or structure surrounding the movable mass. For example, the wire-bond damper may be on a top surface of the movable mass. As another example, the wire-bond damper may be on the support substrate, laterally between the anchor and the movable mass. Further, the wire-bond damper comprises a wire formed by wire bonding and configured to dampen shock to the movable mass.
    Type: Application
    Filed: August 9, 2023
    Publication date: November 30, 2023
    Inventors: Tsung-Lin Hsieh, Wei-Jhih Mao, Shang-Ying Tsai, Kuei-Sung Chang, Chun-Wen Cheng
  • Patent number: 11765975
    Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: September 19, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hsien Tsai, Shang-Ying Tsai, Fu-Lung Hsueh, Shih-Ming Yang, Jheng-Yuan Wang, Ming-De Chen
  • Publication number: 20230257256
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC) including a substrate. A plurality of adhesive structures is disposed on the substrate. A microelectromechanical systems (MEMS) structure is disposed on the adhesive structures. The MEMS structure comprises a movable element disposed within a cavity. A first plurality of stopper bumps is disposed between the movable element and the substrate.
    Type: Application
    Filed: March 9, 2022
    Publication date: August 17, 2023
    Inventors: Wei-Jhih Mao, Shang-Ying Tsai, Kuei-Sung Chang, Chun-Wen Cheng
  • Patent number: 11713242
    Abstract: In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.
    Type: Grant
    Filed: November 11, 2021
    Date of Patent: August 1, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Fei-Lung Lai, Kuei-Sung Chang, Shang-Ying Tsai
  • Patent number: 11661333
    Abstract: A semiconductor structure includes a substrate; a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: May 30, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Jhih Mao, Shang-Ying Tsai, Kuei-Sung Chang, Chun-Wen Cheng
  • Patent number: 11591211
    Abstract: A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: February 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yen-Cheng Liu, Cheng-Yu Hsieh, Shang-Ying Tsai, Kuei-Sung Chang
  • Patent number: 11542151
    Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) apparatus. The MEMS apparatus includes a base substrate and a conductive routing layer disposed over the base substrate. A bump feature is disposed directly over the conductive routing layer. Opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer. A MEMS substrate is bonded to the base substrate and includes a MEMS device directly over the bump feature. An anti-stiction layer is arranged on one or more of the bump feature and the MEMS device.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: January 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Sung Chang, Fei-Lung Lai, Shang-Ying Tsai, Cheng Yu Hsieh
  • Publication number: 20220415699
    Abstract: Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 29, 2022
    Inventors: Chien-Fa LEE, Chin-Lin CHOU, Shang-Ying TSAI, Shou-Wen KUO, Kuei-Sung CHANG, Jiun-Rong PAI, Hsu-Shui LIU, Chun-Wen CHENG
  • Patent number: 11530130
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Sung Chang, Chia-Hua Chu, Shang-Ying Tsai
  • Patent number: 11508608
    Abstract: Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: November 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Fa Lee, Chin-Lin Chou, Shang-Ying Tsai, Shou-Wen Kuo, Kuei-Sung Chang, Jiun-Rong Pai, Hsu-Shui Liu, Chun-wen Cheng
  • Patent number: 11485631
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The MEMS substrate comprises a moveable element arranged over a carrier substrate. The epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts overlies the epitaxial layer. A first subset of the plurality of contacts overlies the moveable element. The plurality of contacts respectively has an ohmic contact with the epitaxial layer.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Sung Chang, Chia-Hua Chu, Shang-Ying Tsai
  • Publication number: 20220306454
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.
    Type: Application
    Filed: June 15, 2022
    Publication date: September 29, 2022
    Inventors: Kuei-Sung Chang, Shang-Ying Tsai, Wei-Jhih Mao
  • Publication number: 20220270999
    Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.
    Type: Application
    Filed: February 25, 2021
    Publication date: August 25, 2022
    Inventors: Wei-Jhih Mao, Kuei-Sung Chang, Shang-Ying Tsai
  • Patent number: 11420866
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: August 23, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Sung Chang, Shang-Ying Tsai, Wei-Jhih Mao
  • Publication number: 20220209093
    Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.
    Type: Application
    Filed: January 7, 2022
    Publication date: June 30, 2022
    Inventors: Ming-Hsien TSAI, Shang-Ying TSAI, Fu-Lung HSUEH, Shih-Ming YANG, Jheng-Yuan WANG, Ming-De CHEN
  • Publication number: 20220184614
    Abstract: A flow cell includes: a first substrate; a second substrate; a first resin layer disposed over an inner surface of the first substrate; a second resin layer disposed over an inner surface of the second substrate; a first plurality of biological capture sites located at the first resin layer; a second plurality of biological capture sites located at the second resin layer; and a polymer layer interposed between the first resin layer and the second resin layer, such that the first substrate is attached to the second substrate via at least the first resin layer, the polymer layer, and the second resin layer, wherein the polymer layer defines a plurality of microfluidic channels that extend through polymer layer.
    Type: Application
    Filed: February 28, 2022
    Publication date: June 16, 2022
    Applicant: Illumina, Inc.
    Inventors: Shang-Ying TSAI, Li-Min Hung, Jung-Huei Peng, Shane Bowen, Hui Han, Danny Chan, Sang Park
  • Publication number: 20220162058
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) package comprising a wire-bond damper. A housing structure overlies a support substrate, and a MEMS structure is between the support substrate and the housing structure. The MEMS structure comprises an anchor, a spring, and a movable mass. The spring extends from the anchor to the movable mass to suspend and allow movement of the movable mass in a cavity between the support substrate and the housing structure. The wire-bond damper is on the movable mass or structure surrounding the movable mass. For example, the wire-bond damper may be on a top surface of the movable mass. As another example, the wire-bond damper may be on the support substrate, laterally between the anchor and the movable mass. Further, the wire-bond damper comprises a wire formed by wire bonding and configured to dampen shock to the movable mass.
    Type: Application
    Filed: March 8, 2021
    Publication date: May 26, 2022
    Inventors: Tsung-Lin Hsieh, Wei-Jhih Mao, Shang-Ying Tsai, Kuei-Sung Chang, Chun-Wen Cheng