Abstract: The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface.

Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Abstract: The present disclosure, in some embodiments, relates to a method for manufacturing a MEMS apparatus. The method may be performed by forming an anti-stiction layer on one or more respective surfaces of a handle substrate and a MEMS substrate. The anti-stiction layer is patterned, therein defining a patterned anti-stiction layer that uncovers one or more predetermined locations associated with a bonding of the handle substrate to the MEMS substrate. The handle substrate is bonded to the MEMS substrate at the one or more predetermined locations.

Abstract: In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip including an epitaxial layer overlying a microelectromechanical systems (MEMS) substrate. The method includes bonding a MEMS substrate to a carrier substrate, the MEMS substrate includes monocrystalline silicon. An epitaxial layer is formed over the MEMS substrate, the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts are formed over the epitaxial layer, the plurality of contacts respectively form ohmic contacts with the epitaxial layer.

Abstract: A flow cell includes: a first substrate; a second substrate; a first resin layer disposed over an inner surface of the first substrate; a second resin layer disposed over an inner surface of the second substrate; a first plurality of biological capture sites located at the first resin layer; a second plurality of biological capture sites located at the second resin layer; and a polymer layer interposed between the first resin layer and the second resin layer, such that the first substrate is attached to the second substrate via at least the first resin layer, the polymer layer, and the second resin layer, wherein the polymer layer defines a plurality of microfluidic channels that extend through polymer layer.

Abstract: A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen.

Abstract: The present disclosure, in some embodiments, relates to a method for manufacturing a MEMS apparatus. The method may be performed by forming an anti-stiction layer on one or more respective surfaces of a handle substrate and a MEMS substrate. The anti-stiction layer is patterned, therein defining a patterned anti-stiction layer that uncovers one or more predetermined locations associated with a bonding of the handle substrate to the MEMS substrate. The handle substrate is bonded to the MEMS substrate at the one or more predetermined locations.

Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.

Abstract: A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.

Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Abstract: A semiconductor device includes a first substrate, a second substrate bonded to the first substrate from a first surface of the second substrate, a third substrate bonded to the second substrate from a second surface of the second substrate, a cavity defined by the first substrate, the second substrate and the third substrate; and a viewer window provided in the third substrate and aligned with the cavity; wherein the inside of the cavity is observed through the viewer window.

Abstract: A semiconductive structure includes a first substrate including a first surface and a second surface opposite to the first surface, a second substrate disposed over the first surface and including a first device and a second device, a first capping structure disposed over the second substrate, and including a via extending through the first capping structure to the second device, a first cavity surrounding the first device and defined by the first capping structure and the first substrate, a second cavity surrounding the second device and defined by the first capping structure and the first substrate, and a second capping structure disposed over the first capping structure and covering the via, wherein the second cavity and the via are sealed by the second capping structure.

Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Abstract: A semiconductor device includes a first substrate, a second substrate bonded to the first substrate from a first surface of the second substrate, a third substrate bonded to the second substrate from a second surface of the second substrate, a cavity defined by the first substrate, the second substrate and the third substrate; and a viewer window provided in the third substrate and aligned with the cavity; wherein the inside of the cavity is observed through the viewer window.