Patents by Inventor Shang-Ying Tsai

Shang-Ying Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190002273
    Abstract: The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface.
    Type: Application
    Filed: August 1, 2017
    Publication date: January 3, 2019
    Inventors: Kuei-Sung Chang, Fei-Lung Lai, Shang-Ying Tsai, Cheng Yu Hsieh
  • Publication number: 20190006571
    Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 3, 2019
    Inventors: Ming-Hsien TSAI, Shang-Ying TSAI, Fu-Lung HSUEH, Shih-Ming YANG, Jheng-Yuan WANG, Ming-De CHEN
  • Patent number: 10155244
    Abstract: The present disclosure relates to a micro-fluidic probe card that deposits a fluidic chemical onto a substrate with a minimal amount of fluidic chemical waste, and an associated method of operation. In some embodiments, the micro-fluidic probe card has a probe card body with a first side and a second side. A sealant element, which contacts a substrate, is connected to the second side of the probe card body in a manner that forms a cavity within an interior of the sealant element. A fluid inlet, which provides a fluid from a processing tool to the cavity, is a first conduit extending between the first side and the second side of the probe card body. A fluid outlet, which removes the fluid from the cavity, is a second conduit extending between the first side and the second side of the probe card body.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Yi-Shao Liu, Fei-Lung Lai, Shang-Ying Tsai
  • Publication number: 20180334378
    Abstract: A MEMS device includes a first structure including at least one first bump over a surface of the first structure, a second structure including a first side facing the surface of the first bump and a second side opposite to the first side, and a gap between the first structure and the second structure. The first structure and the second structure are configured to move in relation to each other. The first bump includes a plurality of first teeth over a stop surface of the first bump.
    Type: Application
    Filed: June 29, 2017
    Publication date: November 22, 2018
    Inventors: SHANG-YING TSAI, KUEI-SUNG CHANG, YUEH KANG LEE
  • Patent number: 10131533
    Abstract: A MEMS device includes a first structure including at least one first bump over a surface of the first structure, a second structure including a first side facing the surface of the first bump and a second side opposite to the first side, and a gap between the first structure and the second structure. The first structure and the second structure are configured to move in relation to each other. The first bump includes a plurality of first teeth over a stop surface of the first bump.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: November 20, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Shang-Ying Tsai, Kuei-Sung Chang, Yueh Kang Lee
  • Publication number: 20180311955
    Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.
    Type: Application
    Filed: April 23, 2018
    Publication date: November 1, 2018
    Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
  • Publication number: 20180222750
    Abstract: A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.
    Type: Application
    Filed: June 9, 2017
    Publication date: August 9, 2018
    Inventors: YEN-CHENG LIU, CHENG-YU HSIEH, SHANG-YING TSAI, KUEI-SUNG CHANG
  • Publication number: 20180194613
    Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
    Type: Application
    Filed: March 2, 2018
    Publication date: July 12, 2018
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Shang-Ying Tsai, Hung-Chia Tsai, Yi-Chuan Teng
  • Patent number: 9950522
    Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: April 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
  • Patent number: 9919914
    Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: March 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Shang-Ying Tsai, Hung-Chia Tsai, Yi-Chuan Teng
  • Publication number: 20170326548
    Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.
    Type: Application
    Filed: May 23, 2017
    Publication date: November 16, 2017
    Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng
  • Publication number: 20170316969
    Abstract: A semiconductor device includes a first wafer and a second wafer. The first wafer has a top portion. The second wafer is disposed on the top portion of the first wafer, wherein the second wafer has a bottom portion bonded on the top portion of the first wafer, and a non-bonded area of the bottom portion has a width smaller than 0.5 mm. The bottom portion of the second wafer has a size smaller than or equal to that of the top portion of the first wafer. In some embodiments, the top portion of the first wafer has first rounded corners, and the bottom portion of the second wafer has second corners. A cross-sectional view of each of the second rounded corners has a radius smaller than that of each of first rounded corners. In some embodiments, the bottom portion of the second wafer has right angle corners.
    Type: Application
    Filed: July 26, 2016
    Publication date: November 2, 2017
    Inventors: Kuei-Sung Chang, Ching-Ray Chen, Yen-Cheng Liu, Shang-Ying Tsai
  • Patent number: 9725301
    Abstract: A structure and a formation method of a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first enclosed space surrounded by the MEMS substrate and the cap substrate, and the first movable element is in the first enclosed space. The MEMS device further includes a second enclosed space surrounded by the MEMS substrate and the cap substrate, and the second movable element is in the second enclosed space. In addition, the MEMS device includes a pressure-changing layer in the first enclosed space.
    Type: Grant
    Filed: October 28, 2014
    Date of Patent: August 8, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng, Shang-Ying Tsai, Chin-Wei Liang
  • Patent number: 9677884
    Abstract: A method of forming a structure for a gyroscope sensor includes forming a first dielectric over a substrate and a material layer over the first dielectric layer. A first portion of the material layer is removed to form a recess and a second portion of the material layer is removed to define a first channel between a gyro disk and a frame. A second channel is formed in the substrate corresponding to the first channel, and a portion of the first dielectric is removed to form a second dielectric between the gyro disk and the substrate.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: June 13, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai
  • Patent number: 9673169
    Abstract: A wafer seal ring may be formed on a wafer having a pattern structure with a pattern density. The wafer seal ring pattern structure may include a plurality of lines having a width and a spacing that may be approximately equal to a width and a spacing of die bond rings on the wafer. The wafer having the wafer seal ring formed thereon may be bonded to a wafer that may not have a wafer seal ring. A pair of wafers may be formed with respective wafer seal rings formed in a corresponding manner. The pair of wafers may be bonded together with the wafer seal rings aligned and bonded together to form a seal ring structure between the bonded wafers.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: June 6, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Chuan Teng, Jung-Huei Peng, Shang-Ying Tsai, Hsin-Ting Huang, Li-Min Hung, Yao-Te Huang, Chin-Yi Cho
  • Patent number: 9656260
    Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: May 23, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng
  • Patent number: 9617143
    Abstract: A method of forming a semiconductor device comprises bonding a capping wafer and a base wafer to form a wafer package. The base wafer comprises a plurality of chip package portions. The capping wafer comprises a plurality of isolation trenches. Each isolation trench of the plurality of isolation trenches is configured to substantially align with a corresponding chip package portion of the plurality of chip package portions. The method also comprises separating the wafer package into a plurality of chip packages. Each chip package of the plurality of chip packages comprises at least one chip package portion of the plurality of chip package portions.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: April 11, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-wen Cheng, Jung-Huei Peng, Shang-Ying Tsai, Hung-Chia Tsai, Yi-Chuan Teng
  • Patent number: 9611141
    Abstract: The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a first direction. The device also includes a plurality of first metal gates disposed over the active region such that the first metal gates each extend in a second direction different from the first direction. The plurality of first metal gates includes an outer-most first metal gate having a greater dimension measured in the second direction than the rest of the first metal gates. The device further includes a plurality of second metal gates disposed over the substrate but not over the doped active region. The second metal gates contain different materials than the first metal gates. The second metal gates each extend in the second direction and form a plurality of respective N/P boundaries with the first metal gates.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: April 4, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ping-Yin Liu, Li-Cheng Chu, Hung-Hua Lin, Shang-Ying Tsai, Yuan-Chih Hsieh, Jung-Huei Peng, Lan-Lin Chao, Chia-Shiung Tsai, Chun-Wen Cheng
  • Publication number: 20170065958
    Abstract: The present disclosure relates to a method of depositing a fluid onto a substrate. In some embodiments, the method may be performed by mounting a substrate to a micro-fluidic probe card, so that the substrate abuts a cavity within the micro-fluidic probe card that is in communication with a fluid inlet and a fluid outlet. A first fluidic chemical is selectively introduced into the cavity via the fluid inlet of the micro-fluidic probe card.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 9, 2017
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Yi-Shao Liu, Fei-Lung Lai, Shang-Ying Tsai
  • Patent number: 9584003
    Abstract: A semiconductor device includes a moveable element over a substrate, wherein the moveable element is moveable relative to the substrate. The semiconductor device further includes a first anchor portion connected to the substrate; and a second anchor portion connected to the substrate on an opposite side of the moveable element from the first anchor portion. The semiconductor device further includes a first connector configured to connect the moveable element to the first anchor portion. The semiconductor device further includes a second connector configured to connect the moveable element to the second anchor portion. The semiconductor device further includes a conductive wire loop on the moveable element; and a connection wire electrically connected to a first end of the conductive wire loop, wherein the connection wire extends across the first connector to the first anchor portion.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: February 28, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tien-Kan Chung, Wen-Chuan Tai, Yao-Te Huang, Hsin-Ting Huang, Shang-Ying Tsai, Chang-Yi Yang, Chia-Ming Hung