Abstract: A layout method includes: forming a layout structure of a memory array having a first row, wherein the first row comprises a plurality of storage cells; disposing a word line; disposing a plurality of control electrodes for connecting the plurality of storage cells of the first row to the word line; and disposing a first cut layer on a first portion of a first control electrode of the plurality of control electrodes.

Abstract: An integrated circuit includes a semiconductor substrate and a plurality of circuit elements in or on the substrate. The circuit elements are defined by standard layout cells selected from a cell library. The circuit elements including a plurality of flip-flops. Each flip-flop has a data input terminal, a data output terminal, a clock input terminal, and a clock output terminal. A first one of the flip-flops directly abuts a second flip-flop such that the clock output terminal of the first flip-flop electrically connects with the clock input terminal of the second flip-flop.

Abstract: A chip and an interface conversion device are provided. The chip includes first, second, third, fourth, fifth and sixth pads. The first and second pads are coupled to first and second SBU pins of a USB connector respectively. The fourth and the sixth pads are coupled to first and second pins of an AUX channel of a DP connector respectively. When the chip operates in a first mode, first and second AUX channel signals generated by the chip are transmitted to the third and fifth pads respectively, a voltage of the fourth pad is weakly pulled down, and a voltage of the sixth pad is weakly pulled up. When the chip operates in a second mode, one of the first and second pads is connected to the fourth pad, and the other one of the first and second pads is connected to the sixth pad.

Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.

Abstract: Memories are provided. A memory includes a first memory array, a second memory array and a read circuit. The first memory array is configured to store first data. The second memory array is configured to store second data that is complementary to the first data. The read circuit includes a decoding circuit, a sensing circuit and an output buffer. The decoding circuit is configured to provide a first signal according to the first data and a second signal according to the second data in response to an address signal. The sensing circuit is configured to provide a first sensing signal according to a reference signal and the first signal, and a second sensing signal according to the reference signal and the second signal. The output buffer is configured to provide the first sensing signal or the second sensing signal as an output according to a control signal.

Abstract: A multi-fuse memory cell is disclosed. The circuit includes: a first fuse element electrically coupled to a first transistor, a gate of the first transistor is electrically coupled to a first selection signal; a second fuse element electrically coupled to a second transistor, a gate of the second transistor is electrically coupled to a second selection signal, both the first transistor and the second transistor are grounded; and a programming transistor electrically coupled to the first fuse element and the second fuse element, wherein a gate of the programming transistor is electrically coupled to a programming signal.

Abstract: An imaging optical lens assembly includes five optical elements with refractive power. The five optical elements, in order from an object side to an image side along an optical path, are a first optical element, a second optical element, a third optical element, a fourth optical element, and a fifth optical element. The first optical element has an object-side surface being concave in a paraxial region thereof. The third optical element has negative refractive power.

Abstract: The disclosure provides an electronic apparatus, a charging method and a non-volatile computer readable recording medium. The electronic apparatus includes a power module and a processor coupled to the power module. The processor is configured to: obtain a charging start time point of the power module; estimate a charging recovery time point according to usage state information; when an electric quantity of the power module is greater than or equal to a first electric quantity, stop the power module from being charged continuously; and at the charging recovery time point, enable the power module to be charged to a second electric quantity, where the second electric quantity is greater than the first electric quantity.

Abstract: A method of sidelink communications by a plurality of user equipment (UE) without the control of a base station in a wireless communication system is disclosed. In one embodiment, the UE being a scheduler end is configured to allocate the resources for initial/repeated transmissions and ACK/NACK messages, and also transmit information regarding the allocated resources to both the UEs being a transmitter end and a receiver end. In one embodiment, retransmission is performed when none of the scheduler and transmitter ends has received the ACK message sent by the receiver end, so as to minimize redundant retransmission in consideration of transmission reliability. In one embodiment, retransmission is performed when at least one of the scheduler and transmitters end has received the NACK message sent by the receiver end before the retransmission timer has reached to zero, so as to minimize transmission latency.

Abstract: A method of manufacturing an anti-fuse device includes forming an anti-fuse structure on a substrate, forming a first transistor at a first position away from the anti-fuse device in a first direction, and forming a second transistor at a second position away from the anti-fuse device in a second direction opposite the first direction. Forming the anti-fuse structure includes forming first and second S/D structures in an active area, the first transistor includes the first S/D structure, and the second transistor includes the second S/D structure. The method includes constructing a first electrical connection between gate structures of the first and second transistors and a second electrical connection between a third S/D structure of the first transistor and a fourth S/D structure of the second transistor.

Abstract: An integrated circuit includes a semiconductor substrate and a plurality of circuit elements in or on the substrate. The circuit elements are defined by standard layout cells selected from a cell library. The circuit elements including a plurality of flip-flops. Each flip-flop has a data input terminal, a data output terminal, a clock input terminal, and a clock output terminal. A first one of the flip-flops directly abuts a second flip-flop such that the clock output terminal of the first flip-flop electrically connects with the clock input terminal of the second flip-flop.

Abstract: A multi-fuse memory cell is disclosed. The circuit includes: a first fuse element electrically coupled to a first transistor, a gate of the first transistor is electrically coupled to a first selection signal; a second fuse element electrically coupled to a second transistor, a gate of the second transistor is electrically coupled to a second selection signal, both the first transistor and the second transistor are grounded; and a programming transistor electrically coupled to the first fuse element and the second fuse element, wherein a gate of the programming transistor is electrically coupled to a programming signal.

Abstract: A memory device includes a first memory cell having a first polysilicon line associated with a first read word line and intersecting a first active region and a second active region, and a second polysilicon line and a first CPODE associated with a first program word line, the second polysilicon line intersecting the first active region and the first CPODE intersecting the second active region. The memory device also includes a second memory cell adjacent to the first memory cell, the second memory cell having a third polysilicon line associated with a second read word line and intersecting the first active region and the second active region, and a fourth polysilicon line and a second CPODE associated with a second program word line, the fourth polysilicon line intersecting the second active region and the second CPODE intersecting the first active region to form a cross-arrangement of CPODE.

Abstract: A millimeter wave antenna device includes an antenna array, a first parasitic element and a second parasitic element. The antenna array includes m×n antennas and is disposed in an antenna area. The first parasitic element is disposed beside a first side of the antenna area. The second parasitic element is disposed beside a second side of the antenna area. None of the first parasitic element and the second parasitic element overlaps with the antenna area.

Abstract: Memories are provided. A memory includes a first memory array, a second memory array, and a read circuit. The first memory array is configured to store main data. The second memory array is configured to store complement data that is complementary to the main data. The read circuit includes a first sense amplifier, a second sense amplifier and an output buffer. The first sense amplifier is configured to provide a first sensing signal according to a reference signal and first data of the main data corresponding to a first address signal. The second sense amplifier is configured to provide a second sensing signal according to the reference signal and second data of the complement data corresponding to the first address signal. The output buffer is configured to provide one of the first sensing signal and the second sensing signal as an output according to a control signal.

Abstract: An electrostatic discharge (ESD) circuit includes: a cascade of NMOS transistors including a first NMOS transistor operatively cascaded to a second NMOS transistor wherein the cascade of NMOS transistors is operatively coupled to a first bus that receives an ESD pulse signal; a first single-gate-oxide ESD control circuit coupled to the first NMOS transistor and configured to turn on the first NMOS transistor during an ESD event, the first single-gate-oxide control circuit coupled between the first bus at a first voltage and a first node at a second voltage, wherein the first voltage is higher than the second voltage; a second single-gate-oxide control circuit operatively coupled to the second NMOS transistor and configured to turn on the second NMOS transistor during an ESD event and to turn off the second NMOS transistor during a normal operation, wherein the second single-gate-oxide control circuit is coupled between the first node at the second voltage and a second bus at a ground voltage, wherein the seco

Abstract: An IC device includes a first anti-fuse structure including a first dielectric layer between a first gate conductor and a first active area, and a second anti-fuse structure including a second dielectric layer between a second gate conductor and the first active area. A first via is electrically connected to the first gate conductor at a first location a first distance from the first active area, a second via is electrically connected to the second gate conductor at a second location a second distance from the first active area, and the first distance is approximately equal to the second distance.

Abstract: An IC device includes an anti-fuse device including a dielectric layer between a first gate structure and an active area, a first transistor including a second gate structure overlying the active area, and a second transistor including a third gate structure overlying the active area. The first gate structure is between the second gate structure and the third gate structure.

Abstract: A data transmission system and a data transmission method are disclosed. The data transmission system includes a cloud server, an edge computing device, and a gateway. The cloud server includes a schema database which stores a transmission address corresponding to a target schema. The edge computing device transmits a data receiving request message related to the target schema to the cloud server. The cloud server transmits the transmission address to the edge computing device after receiving the data receiving request message. After receiving the transmission address, the edge computing device receives at least one data value corresponding to at least one label of the target schema from the gateway according to the transmission address, and generates a target data corresponding to the target schema according to the at least one label and the at least one data value.

Abstract: A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a program line and a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.