Patents by Inventor Shaofeng Yu

Shaofeng Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030131044
    Abstract: In one embodiment of the invention, a Peer-to-Peer (P2P) subsystem includes a cache of a current peer and a peer locator. The current peer is in a current ring at a current level. The cache stores information of ring peers within the current ring. The current ring is part of a hierarchical ring structure of P2P nodes. The hierarchical ring structure has at least one of a lower level and a upper level. The peer locator locates a target peer in the cache in response to a request.
    Type: Application
    Filed: January 4, 2002
    Publication date: July 10, 2003
    Inventors: Gururaj Nagendra, Shaofeng Yu
  • Publication number: 20030126199
    Abstract: A peer-to-peer network communication method is disclosed. When a server is active in the network, the server is queried for information about a desired peer. When the server is not active in the network, neighbor peers are queried for information about the desired peer.
    Type: Application
    Filed: January 2, 2002
    Publication date: July 3, 2003
    Inventors: Seemab Aslam Kadri, Shaofeng Yu
  • Publication number: 20020086502
    Abstract: A method of forming a doped region. According to the present invention ions are implanted into a semiconductor material. The ion implanted semiconductor material is then laser annealed to form a doped semiconductor region.
    Type: Application
    Filed: December 29, 2000
    Publication date: July 4, 2002
    Inventors: Mark Y. Liu, Mitchell C. Taylor, Shaofeng Yu
  • Patent number: 6410359
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Grant
    Filed: March 26, 2001
    Date of Patent: June 25, 2002
    Assignee: Intel Corporation
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa, Joseph W. Parks, Jr., Mark A. Beiley, Zong-Fu Li, Cory E. Weber, Shaofeng Yu
  • Publication number: 20010019851
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Application
    Filed: March 26, 2001
    Publication date: September 6, 2001
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa, Joseph W. Parks, Mark A. Beiley, Zong-Fu Li, Cory E. Weber, Shaofeng Yu
  • Patent number: 6215165
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Grant
    Filed: May 12, 1999
    Date of Patent: April 10, 2001
    Assignee: Intel Corporation
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa, Joseph W. Parks, Jr., Mark A. Beiley, Zong-Fu Li, Cory E. Weber, Shaofeng Yu