Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: Systems, devices and methods for calibrating or increasing the accuracy of light sensing devices. The methods can include calibrating a light sensing device with a calibration source that is adapted to mimic at least one representative spectrum.

Abstract: System and methods for accurate measurement and real-time feedback of solar ultraviolet exposure for management of ultraviolet dose. The systems can include a wearable device and a mobile device, the system performing accurate measurement of UV exposure.

Abstract: System and methods for accurate measurement and real-time feedback of solar ultraviolet exposure for management of ultraviolet dose. The systems can include a wearable device and a mobile device, the system performing accurate measurement of UV exposure.

Abstract: Charging systems for wearable UV sensing devices. The charging systems include a wearable housing including a UV sensor, a central conductor, and at least one annular conductor extending around the central conductor. The system also includes a charger that has at least first and second conductive contacts, where the first and second contacts are spaced from each other and the central conductor and annular conductor are spaced from each other such that the first and second contacts are aligned with the central conductor and the annular conductor, respectively, when the housing and charger interface.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: A computer executable method that can be stored in a memory, the method including: visually presenting on a display of a user device a history of UV dose that was calculated based on information sensed by a UV sensor in a wearable UV sensing device; visually presenting a percentile indicator on the display, the percentile indicator being indicative of a calculated percentile of the history of UV dose; and visually presenting on the display a user-adjustable UV dose threshold interface that is adapted to allow the user to interact with the user-adjustable UV dose interface and choose a user-chosen UV dose threshold quantity.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: System and methods for accurate measurement and real-time feedback of solar ultraviolet exposure for management of ultraviolet dose. The systems can include a wearable device and a mobile device, the system performing accurate measurement of UV exposure.

Abstract: Systems and methods for accurate measurement and real-time feedback of solar ultraviolet exposure for management of ultraviolet dose. The systems can include a wearable device including a proximity sensor, the proximity sensor used to initiate an alert that the proximity sensor is covered. The systems can include a visible light sensor, the visible light sensor used to enter into a sleep, or night, mode.

Abstract: System and methods for accurate measurement and real-time feedback of solar ultraviolet exposure for management of ultraviolet dose. The systems can include a wearable device and a mobile device, the system performing accurate measurement of UV exposure.

Abstract: Exemplary embodiments of the present disclosure provide for an electronic reservation environment connecting potential travelers with operators that provide non-scheduled chartered transportation. The electronic reservation environment can be programmed to accept aggregate booking requests from potential travelers to allow travelers to share non-scheduled chartered transportation. Shared transportation criteria can be specified to determine whether to present an aggregate booking request to an operator.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: A mechanism is provided in a data processing system for detecting lithographic hotspots. The mechanism receives a design layout. The mechanism generates spatial pattern clips from the design layout. The mechanism performs a transform on the spatial pattern clips to form frequency domain pattern clips. The mechanism performs feature extraction on the frequency domain pattern clips to form frequency domain features. The mechanism utilizes the extracted features on a set of training samples to train a machine learning classifier model. The mechanism classifies a set of previously unseen patterns, based on frequency domain features of the previously unseen patterns using the trained machine learning classifier model, into hotspots and non-hotspots.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: Various embodiments include computer-implemented methods, computer program products and systems for modeling at least one feature in an integrated circuit (IC) layout for an inter-layer effect. In some cases, approaches include a computer-implemented method of modeling at least one feature in an IC layout for an inter-level effect, the method including: building a set of shape measurement regions each connected with an edge of the at least one feature; determining a set of shape parameters for each shape measurement region in the set of shape measurement regions; and creating a column vector representing each shape measurement region using the set of shape parameters, the column vector representing the inter-layer effect of the at least one feature, wherein the inter-layer effect includes a physical relationship between the at least one feature and another feature on a distinct level of the IC layout.