Abstract: A computer-implemented method for retargeting an Integrated Circuit (IC) layout is disclosed. In one embodiment, the method includes generating a diffraction pattern for the IC layout including a set of diffraction-orders, the IC layout including a set of features defined by a set of target edges, analyzing the diffraction pattern with a merit function to estimate printability of the IC layout, monitoring a change in value of the merit function as a position of at least one of the set of target edges is adjusted across a range, and retargeting the set of target edges based on the monitoring of the merit function.

Abstract: A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.

Abstract: A method, system, and computer program product for improving printability of a design of an integrated circuit (IC) using pitch-aware coloring for multi-patterning lithography (MPL) are provided in the illustrative embodiments. A first shape is identified in a layout of the IC corresponding to the design as being apart by a first distance from a second shape. The first distance is a forbidden distance and at least equal to a minimum distance requirement of a lithography system. A determination is made that the first shape and the second shape are colored using a first color. The first shape is changed to a second color, such that even though the first distance is at least equal to the minimum distance requirement of the lithography system, the first and the second shapes are placed on different masks to print the design, thereby improving the printability of the design.

Abstract: A method, system, and computer program product for improving printability of a design of an integrated circuit (IC) using pitch-aware coloring for multi-patterning lithography (MPL) are provided in the illustrative embodiments. A first shape is identified in a layout of the IC corresponding to the design as being apart by a first distance from a second shape. The first distance is a forbidden distance and at least equal to a minimum distance requirement of a lithography system. A determination is made that the first shape and the second shape are colored using a first color. The first shape is changed to a second color, such that even though the first distance is at least equal to the minimum distance requirement of the lithography system, the first and the second shapes are placed on different masks to print the design, thereby improving the printability of the design.

Abstract: A computer-implemented method for retargeting an Integrated Circuit (IC) layout is disclosed. In one embodiment, the method includes generating a diffraction pattern for the IC layout including a set of diffraction-orders, the IC layout including a set of features defined by a set of target edges, analyzing the diffraction pattern with a merit function to estimate printability of the IC layout, monitoring a change in value of the merit function as a position of at least one of the set of target edges is adjusted across a range, and retargeting the set of target edges based on the monitoring of the merit function.

Abstract: Embodiments of the invention provide a method of modifying a decomposed integrated circuit (IC) layout. The method includes providing a decomposed IC layout, the decomposed IC layout including a set of colors; determining a density of each color in the decomposed IC layout, wherein each color includes a plurality of features formed by a related exposure; separating the decomposed IC layout into a set of tiles; determining a first color with a minimum density in one tile of the set of tiles and a second color with a maximum density in tile, the first color including a first set of first features and the second color including a first set of second features; and replacing the first set of second features on the tile with a second set of first features, and the first set of first features on the tile with a second set of second features.

Abstract: Embodiments of the invention provide a method of modifying a decomposed integrated circuit (IC) layout. The method includes providing a decomposed IC layout, the decomposed IC layout including a set of colors; determining a density of each color in the decomposed IC layout, wherein each color includes a plurality of features formed by a related exposure; separating the decomposed IC layout into a set of tiles; determining a first color with a minimum density in one tile of the set of tiles and a second color with a maximum density in tile, the first color including a first set of first features and the second color including a first set of second features; and replacing the first set of second features on the tile with a second set of first features, and the first set of first features on the tile with a second set of second features.

Abstract: In various embodiments, a method of designing an integrated circuit (IC) layout for a multiple patterning layout fill process includes: providing a pre-characterized mask tile library including a plurality of distinct mask tiles each having a distinct mask density on a plurality of distinct exposures each associated with a patterning process in the multiple patterning process; determining a density of a mask group in a first layout window in the IC layout, the first layout window including an open space unfilled by the mask group; and selecting a set of mask tiles from the plurality of distinct mask tiles to fill a portion of the open space, the selecting based upon the determined density of the mask group in the first layout window and the distinct mask density of the selected set of mask tiles on the plurality of distinct exposures.

Abstract: A mechanism is provided for frequency domain layout decomposition in double pattern lithography (DPL) based on Fourier coefficient optimization (FCO). The Fourier transform of a layout represents the spatial frequency terms present in the layout. The mechanism models decomposed patterns for two exposures as a function of the corresponding Fourier coefficients. For each exposure, the mechanism sets the corresponding Fourier coefficients to zero for spatial frequency terms greater than the cut-off frequency of the optical system. The mechanism then optimizes non-zero Fourier coefficients for the two exposures to decompose the original target. The mechanism provides frequency domain optimization instead of conventional spatial domain methods, which naturally leads to optics-aware decomposition and stitch insertion in arbitrary two dimensional patterns.

Abstract: A mechanism is provided for performing retargeting in a multiple-pattern integrated circuit device design manufacturing process. For at least one element on at least one exposure of multiple-pattern integrated circuit device design after decomposition, a lithographic simulation analysis is performed for a width and first space combination to generate a two-dimensional width and first space representation of lithographic variation. The two-dimensional width and first space representation is combined with second space of the element to a nearest element on pre-decomposed layout of the multiple-pattern integrated circuit device design to generate a three-dimensional representation of retargeting bias values. Responsive to a determination that the element requires a retargeting bias, a retargeting bias is selected for the element based on the three-dimensional representation of retargeting bias values.

Abstract: A method, system, and computer program product for machine learning approach for detecting and correcting lithographic hot-spots in an integrated circuit (IC) design are provided in the illustrative embodiments. A layout corresponding to the IC design is received at a machine learning model (ML model). At the ML model using a hardware component, a set of input objects is identified corresponding to a target shape in the layout. A retargeting value is predicted for the target shape using the set of input objects, such that applying the retargeting value to the target shape in the layout causes the target shape to be modified into a modified target shape, wherein printing the modified target shape instead of the target shape eliminates a lithographic hot-spot that would otherwise occur from printing the target shape in a printed circuit corresponding to the IC design.

Abstract: A method, system, and computer program product for machine learning approach for detecting and correcting lithographic hot-spots in an integrated circuit (IC) design are provided in the illustrative embodiments. A layout corresponding to the IC design is received at a machine learning model (ML model). At the ML model using a hardware component, a set of input objects is identified corresponding to a target shape in the layout. A retargeting value is predicted for the target shape using the set of input objects, such that applying the retargeting value to the target shape in the layout causes the target shape to be modified into a modified target shape, wherein printing the modified target shape instead of the target shape eliminates a lithographic hot-spot that would otherwise occur from printing the target shape in a printed circuit corresponding to the IC design.

Abstract: A method for implementing systematic, variation-aware integrated circuit extraction includes inputting a set of processing conditions to a plurality of variation models, each model corresponding to a separate systematic, parametric variation associated with semiconductor manufacturing of an integrated circuit layout; generating, for each variation model, a netlist update attributable to the associated variation, wherein the netlist update is an update with respect to an original netlist extracted from the integrated circuit layout; and storing the netlist updates generated for each of the processing conditions.

Abstract: A mechanism is provided for simultaneous optical proximity correction (OPC) and decomposition for double exposure lithography. The mechanism begins with two masks that are equal to each other and to the target. The mechanism simultaneously optimizes both masks to obtain a wafer image that both matches the target and is robust to process variations. The mechanism develops a lithographic cost function that optimizes for contour fidelity as well as robustness to variation. The mechanism minimizes the cost function using gradient descent. The gradient descent works on analytically evaluating the derivative of the cost function with respect to mask movement for both masks. It then moves the masks by a fraction of the derivative.

Abstract: A mechanism is provided for reducing through process delay variation in metal wires by layout retargeting. The mechanism performs initial retargeting, decomposition, and resolution enhancement techniques. For example, the mechanism may perform optical proximity correction. The mechanism then performs lithographic simulation and optical rules checking. The mechanism provides retargeting rules developed based on coupling lithography simulation and resistance/capacitance (RC) extraction. The mechanism performs RC extraction to capture non-linear dependency of RC on design shape dimensions. If the electrical properties in the lithographic simulation are within predefined specifications, the mechanism accepts the retargeting rules; however, if the electrical properties from RC extraction are outside the predefined specifications, the mechanism modifies the retargeting rules and repeats resolution enhancement techniques.

Abstract: A mechanism is provided for frequency domain layout decomposition in double pattern lithography (DPL) based on Fourier coefficient optimization (FCO). The Fourier transform of a layout represents the spatial frequency terms present in the layout. The mechanism models decomposed patterns for two exposures as a function of the corresponding Fourier coefficients. For each exposure, the mechanism sets the corresponding Fourier coefficients to zero for spatial frequency terms greater than the cut-off frequency of the optical system. The mechanism then optimizes non-zero Fourier coefficients for the two exposures to decompose the original target. The mechanism provides frequency domain optimization instead of conventional spatial domain methods, which naturally leads to optics-aware decomposition and stitch insertion in arbitrary two dimensional patterns.

Abstract: A mechanism is provided for reducing through process delay variation in metal wires by layout retargeting. The mechanism performs initial retargeting, decomposition, and resolution enhancement techniques. For example, the mechanism may perform optical proximity correction. The mechanism then performs lithographic simulation and optical rules checking. The mechanism provides retargeting rules developed based on coupling lithography simulation and resistance/capacitance (RC) extraction. The mechanism performs RC extraction to capture non-linear dependency of RC on design shape dimensions. If the electrical properties in the lithographic simulation are within predefined specifications, the mechanism accepts the retargeting rules; however, if the electrical properties from RC extraction are outside the predefined specifications, the mechanism modifies the retargeting rules and repeats resolution enhancement techniques.

Abstract: A mechanism is provided for harmonic mean optical proximity correction (HMOPC). A lithographic simulator in a HMOPC mechanism generates an image of a mask shape based on a target shape on a wafer thereby forming one or more lithographic contours. A cost function evaluator module determines a geometric cost function associated with the one or more lithographic contours. An edge movement module minimizes the geometric cost function thereby forming a minimized geometric cost function. The edge movement module determines a set of edge movements for each slice in a set of slices associated with the one or more lithographic contours using the minimized geometric cost function. The edge movement module moves the edges of the mask shape using the set of edge movements for each slice in the set of slices. The HMOPC mechanism then produces a clean mask shape using the set of edge movements.

Abstract: Mechanism are provided for model-based retargeting of photolithographic layouts. An optical proximity correction is performed on a set of target patterns for a predetermined number of iterations until a counter value exceeds a maximum predetermined number of iterations in order to produce a set of optical proximity correction mask shapes. A set of lithographic contours is generated for each of the set of optical proximity correction mask shapes in response to the counter value exceeding the maximum predetermined number of iterations. A normalized image log slope (NILS) extraction is performed on the set of target shapes and use the set of lithographic contours to produce NILS values. The set of target patterns is modified based on the NILS values in response to the NILS values failing to be within a predetermined limit. The steps are repeated until the NILS values are within the predetermined limit.

Abstract: An approach is provided that computes electrical delay ranges that correspond to a number of shapes included in a hardware design layout. The electrical delay ranges are converted to shape tolerances for each of the shapes. A lithography mask of the hardware design layout is generated using the shape tolerances so that the images of the shapes in the mask produced lie within the shape tolerances that correspond to the respective shape.