Abstract: A quick release buckle includes a first connecting member, a second connecting member, and a locking member, where the first connecting member is provided with a first chamber, and the second connecting member is provided with a second chamber; the locking member is provided with a first locking part and a second locking part connected to each other; the first locking part is located inside the first chamber, and is connected to the first connecting member through a reset mechanism; and the second locking part is detachably connected to the second chamber.

Abstract: A modular clamp is described. An example modular clamp includes a clamp assembly and a removable base member. The modular clamp includes multiple rotational aspects located an offset distance from one another and is thus usable to secure workpieces in a variety of positions and orientations while providing access for working thereon. The modular clamp further can be used in a variety of configurations and implementations to achieve a range of different working applications, which is not possible using conventional table clamps.

Abstract: A rubber resin material with a high thermal conductivity and a high dielectric constant and a metal substrate using the same are provided. The rubber resin material includes a rubber resin composition, at least one first inorganic filler, and at least one second inorganic filler. The rubber resin composition includes 30 wt % to 60 wt % of a liquid rubber, 10 wt % to 30 wt % of a polyphenylene ether resin, and 20 wt % to 40 wt % of a crosslinker. A molecular weight of the liquid rubber ranges from 2500 g/mol to 6000 g/mol. The at least one first inorganic filler is selected from the group consisting of aluminum oxide, boron nitride, magnesium oxide, zinc oxide, aluminum nitride, silicon carbide, and aluminum silicate. The at least one second inorganic filler is selected from the group consisting of silica, strontium titanate, calcium titanate, and titanium dioxide.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fin structures extending in a first direction over a semiconductor substrate. Each fin structure includes a first region proximate to the semiconductor substrate and a second region distal to the semiconductor substrate. An electrically conductive layer is formed between the first regions of a first adjacent pair of fin structures. A gate electrode structure is formed extending in a second direction substantially perpendicular to the first direction over the fin structure second region, and a metallization layer including at least one conductive line is formed over the gate electrode structure.

Abstract: A method for providing dynamic in-context information is disclosed.

Abstract: Some implementations described herein provide a semiconductor package including an integrated circuit die mounted to an interposer using connection structures. An underfill material between the integrated circuit die and the interposer includes shaped fillets that are below a plane corresponding to a bottom surface of the integrated circuit die. The underfill material including the shaped fillets reduces a likelihood of stresses and/or strains that damage a mold compound from transferring to the mold compound from the underfill material, the integrated circuit die, and/or the interposer. In this way, a quality and reliability of the semiconductor package including the underfill material with the shaped fillets is reduced. By improving the quality and reliability of the semiconductor package, a yield of the semiconductor package may increase to decrease a cost of the semiconductor package.

Abstract: A semiconductor die includes a processing circuit, a first bond pad, and a second bond pad. The first bond pad is electrically connected to a first node of the processing circuit and a first bond wire. The second bond pad is electrically connected to a second node of the processing circuit and a second bond wire. The first bond wire and the second bond wire are magnetically coupled to form a first bond wire T-coil circuit with equivalent negative inductance.

Abstract: Methods of using rifampicin and zidovudine and pharmaceutical compositions comprising the same to inhibit growth of and/or kill Klebsiella pneumoniae, such as antibiotic-resistant Klebsiella pneumoniae.

Abstract: A three-dimensional convolution method includes performing a dimension transposing operation on input data to consecutively arrange elements of the input data in depth and channel dimensions to further generate first data, performing in blocks a convolution on the first data and second data that corresponds to first weight data to generate computed data, and rearranging the computed data according to an original dimensional format of the input data to generate output data.

Abstract: A RRAM and its manufacturing method are provided. The RRAM includes a first dielectric layer formed on a substrate, and two memory cells. The two memory cells include two bottom electrode structures separated from each other. Each bottom electrode structure fills one of two trenches in the first dielectric layer. The two memory cells also include a resistance switching layer and a top electrode structure. The resistance switching layer is conformally formed on the surface of an opening in the first dielectric layer, and the opening is between the two trenches. The top electrode structure is on the resistance switching layer and fills the opening. A top surface of the first dielectric layer, top surfaces of the bottom electrode structures, a top surface of the resistance switching layer, and a top surface of the top electrode structure are coplanar.

Abstract: Disclosed herein, in some embodiments, is a memory device. The memory device includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. An upper surface of the bottom electrode faces away from the substrate. A bottom surface of the top electrode faces the substrate. A data storage layer is arranged between the bottom electrode and the top electrode. At least a portion of the bottom surface of the top electrode does not overlap with any portion of the top surface of the bottom electrode along a first direction parallel to the bottom surface of the top electrode. Furthermore, at least a portion of the top surface of the bottom electrode does not overlap with any portion of the bottom surface of the top electrode along the first direction.

Abstract: A method and apparatus, device, and storage medium for generating an image processing model and processing images based on the generated image processing model. The method includes generating an initial model for an image resolution processing, the initial model comprising an input layer, an output layer, and an intermediate layer; obtaining a training image comprising a first image and a second image, the first image being obtained by performing a resolution reduction processing on the second image; inputting image data of the first image into the intermediate layer from the input layer for a convolution calculation, and obtaining result data based on the convolution calculation, the result data comprising channel output data of N*N channels; and performing a parameter update on convolution kernel parameters in the intermediate layer based on the result data and the second image, and generating the image processing model according to the initial model.

Abstract: A focus ring for a plasma-based semiconductor processing tool is designed to provide and/or ensure etch rate uniformity across a wafer during a plasma etch process. The focus ring may include an angled inner wall that is angled away from a center of the focus ring to direct a plasma toward the wafer. The angle of the angled inner wall may be greater than approximately 130 degrees relative to the top surface of the wafer and/or may be less than approximately 50 degrees relative to an adjacent lower surface of the focus ring to reduce and/or eliminate areas of overlapping plasma on the wafer (which would otherwise cause non-uniform etch rates). Moreover, an inner diameter may be configured to be in a range of approximately 209 millimeters to 214 millimeters to further reduce and/or eliminate areas of overlapping plasma on the wafer.

Abstract: A semiconductor structure includes a first fin and a second fin protruding from a substrate, isolation features over the substrate to separate the first and the second fins, where a top surface of each of the first and the second fins is below a top surface of the isolation features, inner fin spacers disposed along inner sidewalls of the first and the second fins, where the inner fin spacers have a first height measured from a top surface of the isolation features, outer fin spacers disposed along outer sidewalls of the first and the second fins, where the outer fin spacers have a second height measured from the top surface of the isolation features that is less than the first height, and a source/drain (S/D) structure merging the first and the second fins, where the S/D structure includes an air gap having a top portion over the inner fin spacers.

Abstract: Semiconductor devices and methods of manufactured are presented in which a first redistribution structure is formed, semiconductor devices are bonded to the first redistribution structure, and the semiconductor devices are encapsulated in an encapsulant. First openings are formed within the encapsulant, such as along corners of the encapsulant, in order to help relieve stress and reduce cracks.

Abstract: Provided is a manufacturing method of circuit board, including a first substrate, a second substrate, a third substrate, a fourth substrate, multiple conductive structures, and a conductive via structure. The third substrate has an opening and includes a first dielectric layer. The opening penetrates the third substrate, and the first dielectric layer fills the opening. Multiple conductive structures are formed so that the first substrate, the second substrate, the third substrate, and the fourth substrate are electrically connected through the conductive structures to define a ground path. A conductive via structure is formed to penetrate the first substrate, the second substrate, the first dielectric layer of the third substrate, and the fourth substrate. The conductive via structure is electrically connected to the first substrate and the fourth substrate to define a signal path, and the ground path surrounds the signal path.

Abstract: Disclosed herein, in some embodiments, is a memory device. The memory device includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. An upper surface of the bottom electrode faces away from the substrate. A bottom surface of the top electrode faces the substrate. A data storage layer is arranged between the bottom electrode and the top electrode. At least a portion of the bottom surface of the top electrode does not overlap with any portion of the top surface of the bottom electrode along a first direction parallel to the bottom surface of the top electrode. Furthermore, at least a portion of the top surface of the bottom electrode does not overlap with any portion of the bottom surface of the top electrode along the first direction.

Abstract: In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers containing Ge and second semiconductor layers are alternately stacked, is formed over a bottom fin structure. A Ge concentration in the first semiconductor layers is increased. A sacrificial gate structure is formed over the fin structure. A source/drain epitaxial layer is formed over a source/drain region of the fin structure. The sacrificial gate structure is removed. The second semiconductor layers in a channel region are removed, thereby releasing the first semiconductor layers in which the Ge concentration is increased. A gate structure is formed around the first semiconductor layers in which the Ge concentration is increased.

Abstract: Routing arrangements for 3D memory arrays and methods of forming the same are disclosed. In an embodiment, a memory array includes a first word line extending from a first edge of the memory array in a first direction, the first word line having a length less than a length of a second edge of the memory array perpendicular to the first edge of the memory array; a second word line extending from a third edge of the memory array opposite the first edge of the memory array, the second word line extending in the first direction, the second word line having a length less than the length of the second edge of the memory array; a memory film contacting the first word line; and an OS layer contacting a first source line and a first bit line, the memory film being disposed between the OS layer and the first word line.