Patents by Inventor Sheng-Hsiung Chen

Sheng-Hsiung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11636249
    Abstract: Placement methods described in this disclosure provide placement and routing rules where a system implementing the automatic placement and routing (APR) method arranges standard cell structures in a vertical direction that is perpendicular to the fins but parallel to the cell height. Layout methods described in this disclosure also improve device density and further reduce cell height by incorporating vertical power supply lines into standard cell structures. Pin connections can be used to electrically connect the power supply lines to standard cell structures, thus improving device density and performance. The APR process is also configured to rotate standard cells to optimize device layout.
    Type: Grant
    Filed: November 8, 2021
    Date of Patent: April 25, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Hsiung Chen, Chung-Te Lin, Fong-Yuan Chang, Ho Che Yu, Li-Chun Tien
  • Publication number: 20230121153
    Abstract: An integrated circuit includes a cell layer including a first cell and a second cell, a first metal layer over the cell layer and having a first conductive feature, a second metal layer over the first metal layer and having a second conductive feature, and a first via between the first metal layer and the second metal layer and connecting the first conductive feature to the second conductive feature. The first conductive feature spans over a boundary between the first and second cells, and has a lengthwise direction along a first direction. The second conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along a second direction that is perpendicular to the first direction.
    Type: Application
    Filed: December 21, 2022
    Publication date: April 20, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fong-Yuan CHANG, Kuo-Nan YANG, Chung-Hsing WANG, Lee-Chung LU, Sheng-Fong CHEN, Po-Hsiang HUANG, Hiranmay BISWAS, Sheng-Hsiung CHEN, Aftab Alam KHAN
  • Publication number: 20230113014
    Abstract: A method of manufacturing an IC structure includes forming a first plurality of fins extending in a first direction on a substrate, a second plurality of fins extending adjacent to the first plurality of fins, a third plurality of fins extending adjacent to the second plurality of fins, and a fourth plurality of fins extending adjacent to the third plurality of fins. Each fin of the first and fourth pluralities of fins includes one of an n-type or p-type fin, each fin of the second and third pluralities of fins includes the other of the n-type or p-type fin, each of the first and third pluralities of fins includes a first total number of fins, and each of the second and fourth pluralities of fins includes a second total number of fins fewer than the first total number of fins.
    Type: Application
    Filed: December 13, 2022
    Publication date: April 13, 2023
    Inventors: Po-Hsiang HUANG, Fong-Yuan CHANG, Clement Hsingjen WANN, Chih-Hsin KO, Sheng-Hsiung CHEN, Li-Chun TIEN, Chia-Ming HSU
  • Publication number: 20230068280
    Abstract: An IC device includes first and second cells adjacent each other and over a substrate. The first cell includes a first IO pattern along a first track among a plurality of tracks in a first metal layer, the plurality of tracks elongated along a first axis and spaced from each other along a second axis. The second cell includes a plurality of conductive patterns along corresponding different tracks among the plurality of tracks in the first metal layer, each of the plurality of conductive patterns being an IO pattern of the second cell or a floating conductive pattern. The first metal layer further includes a first connecting pattern along the first track and connects the first IO pattern and a second IO pattern of the second cell. The second IO pattern is one of the plurality of conductive patterns of the second cell and is along the first track.
    Type: Application
    Filed: August 31, 2021
    Publication date: March 2, 2023
    Inventors: Cheng-Yu LIN, Jung-Chan YANG, Hui-Zhong ZHUANG, Sheng-Hsiung CHEN, Kuo-Nan YANG, Chih-Liang CHEN, Lee-Chung LU
  • Publication number: 20230057672
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Application
    Filed: November 4, 2022
    Publication date: February 23, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan CHANG, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jul Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Patent number: 11574107
    Abstract: A method of manufacturing a semiconductor device includes forming a transistor layer with an M*1st layer that overlays the transistor layer with one or more first conductors that extend in a first direction. Forming an M*2nd layer that overlays the M*1st layer with one or more second conductors which extend in a second direction. Forming a first pin in the M*2nd layer representing an output pin of a cell region. Forming a long axis of the first pin substantially along a selected one of the one or more second conductors. Forming a majority of the total number of pins in the M*1st layer, the forming including: forming second, third, fourth and fifth pins in the M*1st layer representing corresponding input pins of the circuit; and forming long axes of the second to fifth pins substantially along corresponding ones of the one or more first conductors.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: February 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pin-Dai Sue, Po-Hsiang Huang, Fong-Yuan Chang, Chi-Yu Lu, Sheng-Hsiung Chen, Chin-Chou Liu, Lee-Chung Lu, Yen-Hung Lin, Li-Chun Tien, Yi-Kan Cheng
  • Patent number: 11568122
    Abstract: A method of operating an IC manufacturing system includes determining whether an n-type active region of a cell or a p-type active region of the cell is a first active region based on a timing critical path of the cell, positioning the first active region along a cell height direction in an IC layout diagram of a cell, the first active region having a first total number of fins extending in a direction perpendicular to the cell height direction. The method also includes positioning a second active region in the cell along the cell height direction, the second active region being the n-type or p-type opposite the n-type or p-type of the first active region and having a second total number of fins less than the first total number of fins and extending in the direction, and storing the IC layout diagram of the cell in a cell library.
    Type: Grant
    Filed: July 15, 2021
    Date of Patent: January 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Hsiang Huang, Fong-Yuan Chang, Clement Hsingjen Wann, Chih-Hsin Ko, Sheng-Hsiung Chen, Li-Chun Tien, Chia-Ming Hsu
  • Patent number: 11568125
    Abstract: A semiconductor device including: first, second and third active regions a first gate structure over the first active region and a first part of the second active region; a second gate structure over the third active region and a second part of the second active region; a first cell region including the first gate structure, the first active region and the first part of the second active region; a second cell region including the second gate structure, the third active region and the second part of the second active region; a first border region representing an overlap of the first and second cell regions which is substantially aligned with an approximate midline of the second active region; the second gate structure overlapping the first border region; and there being a first gap which is between the first gate structure and the first border region.
    Type: Grant
    Filed: March 25, 2021
    Date of Patent: January 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sheng-Hsiung Chen, Fong-Yuan Chang, Ho Che Yu
  • Publication number: 20230023165
    Abstract: The routing of conductors in the conductor layers in an integrated circuit are routed using mixed-Manhattan-diagonal routing. Various techniques are disclosed for selecting a conductor scheme for the integrated circuit prior to fabrication of the integrated circuit. Techniques are also disclosed for determining the supply and/or the demand for the edges in the mixed-Manhattan-diagonal routing.
    Type: Application
    Filed: October 3, 2022
    Publication date: January 26, 2023
    Inventors: Sheng-Hsiung Chen, Huang-Yu Chen, Chung-Hsing Wang, Jerry Chang Jui Kao
  • Patent number: 11552068
    Abstract: A method includes forming a cell layer including first and second cells, each of which is configured to perform a circuit function; forming a first metal layer above the cell layer and including a first conductive feature and a second conductive feature extending along a first direction, in which the first conductive feature extends from the first cell into the second cell, and in which a shortest distance between a center line of the first conductive feature and a center line of the second conductive feature along a second direction is less than a width of the first conductive feature, and the second direction is perpendicular to the first direction; forming a first conductive via interconnecting the cell layer and the conductive feature.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: January 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fong-Yuan Chang, Kuo-Nan Yang, Chung-Hsing Wang, Lee-Chung Lu, Sheng-Fong Chen, Po-Hsiang Huang, Hiranmay Biswas, Sheng-Hsiung Chen, Aftab Alam Khan
  • Publication number: 20220416026
    Abstract: A cell region of a semiconductor device includes a first and second isolation dummy gates extending along a first direction. The semiconductor device further includes a first gate extending along the first direction and between the first isolation dummy gate and the second isolation dummy gate. The semiconductor device includes a second gate extending along the first direction, the second gate being between the first isolation dummy gate and the second isolation dummy gate relative to a second direction perpendicular to the first direction. The semiconductor device also includes a first active region and a second active region. The first active region extending in the second direction between the first isolation dummy gate and the second isolation dummy gate. The first active region has a first length in the second direction, and the second active region has a second length in the second direction different from the first length.
    Type: Application
    Filed: January 13, 2022
    Publication date: December 29, 2022
    Inventors: Cheng-Yu LIN, Yi-Lin FAN, Hui-Zhong ZHUANG, Sheng-Hsiung CHEN, Jerry Chang Jui KAO, Xiangdong CHEN
  • Publication number: 20220382958
    Abstract: The routing of conductors in the conductor layers in an integrated circuit are routed using mixed-Manhattan-diagonal routing. Various techniques are disclosed for selecting a conductor scheme for the integrated circuit prior to fabrication of the integrated circuit. Techniques are also disclosed for determining the supply and/or the demand for the edges in the mixed-Manhattan-diagonal routing.
    Type: Application
    Filed: May 27, 2021
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Hsiung Chen, Huang-Yu Chen, Chung-Hsing Wang, Jerry Chang Jui Kao
  • Publication number: 20220384344
    Abstract: An integrated circuit includes a device, a first interconnect structure disposed above the device and a second interconnect structure positioned below the device. The first interconnect structure includes multiple frontside metal layers. The second interconnect structure includes multiple backside metal layers, where each backside metal layer includes metal conductors routed according to diagonal routing. In some embodiments, a backside interconnect structure can include another backside metal layer that includes metal conductors routed according to mixed-Manhattan-diagonal routing. A variety of techniques can be used to route signals between metal conductors in the backside interconnect structure and cells on one or more frontside metal layers.
    Type: Application
    Filed: May 27, 2021
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Hsiung Chen, Jerry Chang Jui Kao, Kuo-Nan Yang, Jack Liu
  • Publication number: 20220367358
    Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.
    Type: Application
    Filed: July 29, 2022
    Publication date: November 17, 2022
    Inventors: Sheng-Hsiung Chen, Chung-Hsing Wang, Fong-yuan Chang, Lee-Chung Lu, Li-Chun Tien, Po-Hsiang Huang, Shao-huan Wang, Ting Yu Chen, Yen-Pin Chen, Chun-Chen Chen, Tzu-Hen Lin, Tai-Yu Cheng
  • Patent number: 11501052
    Abstract: The routing of conductors in the conductor layers in an integrated circuit are routed using mixed-Manhattan-diagonal routing. Various techniques are disclosed for selecting a conductor scheme for the integrated circuit prior to fabrication of the integrated circuit. Techniques are also disclosed for determining the supply and/or the demand for the edges in the mixed-Manhattan-diagonal routing.
    Type: Grant
    Filed: May 27, 2021
    Date of Patent: November 15, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Sheng-Hsiung Chen, Huang-Yu Chen, Chung-Hsing Wang, Jerry Chang Jui Kao
  • Publication number: 20220358277
    Abstract: A system includes a non-transitory computer readable medium configured to store instructions thereon. The system further includes a processor connected to the non-transitory computer readable medium. The processor is configured to execute the instruction for comparing a size of a via pillar structure of a first layout pattern of a plurality of layout patterns with a size of a via pillar structure of a second layout pattern of the plurality of layout patterns, wherein each of the plurality of layout patterns meets an electromigration (EM) rule. The processor is further configured to execute the instructions for replacing, in a layout design, the first layout pattern with the second layout pattern in response to the size of the via pillar structure of the second layout pattern being less than the size of the via pillar structure of the first layout pattern.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 10, 2022
    Inventors: Shao-Huan WANG, Sheng-Hsiung CHEN, Wen-Hao CHEN, Chun-Chen CHEN, Hung-Chih OU
  • Patent number: 11495619
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: November 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20220335194
    Abstract: A system includes a substrate having a first side and a second side opposite the first side, a cell on the substrate having a first pin on either the first side or the second side, and a second pin on the second side, a first signal connected to the first pin, and a second signal connected to the second pin.
    Type: Application
    Filed: July 1, 2022
    Publication date: October 20, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Limited
    Inventors: Sheng-Hsiung Chen, Jerry Kao, Kuo-Nan Yang, Jack Liu
  • Publication number: 20220335199
    Abstract: A semiconductor device including a cell region which includes components representing a circuit arranged such that a rectangular virtual perimeter is drawable around substantially all of the components and includes first and second virtual side boundaries, the components including: a first conductor which is an intra-cell conductor of a first signal that is internal to the circuit, a first end of the intra-cell conductor being substantially a minimum virtual boundary offset inside the first virtual side boundary; and a second conductor of a second signal of the circuit; a portion of the second conductor having a first end which extends outside the first virtual side boundary by a protrusion length substantially greater than the minimum virtual boundary offset; and a second end of the second conductor being receded inside the second virtual side boundary by a first gap substantially greater than the minimum virtual boundary offset.
    Type: Application
    Filed: July 6, 2022
    Publication date: October 20, 2022
    Inventors: Fong-Yuan CHANG, Chin-Chou LIU, Sheng-Hsiung CHEN, Po-Hsiang HUANG
  • Publication number: 20220320018
    Abstract: An interposer includes one or more capacitors to store charge to provide signals to an integrated circuit electrically connected to the interposer. First connectors to each capacitor are interspersed with second connectors to the capacitors and are spaced apart from adjacent second connectors. The one or more capacitors and the resistances associated with the conductive paths between each capacitor and a connector or another capacitor can be modeled.
    Type: Application
    Filed: June 17, 2022
    Publication date: October 6, 2022
    Inventors: Fong-yuan CHANG, Cheng-Hung YEH, Hsiang-Ho CHANG, Po-Hsiang HUANG, Chin-Her CHIEN, Sheng-Hsiung CHEN, Aftab Alam KHAN, Keh-Jeng CHANG, Chin-Chou LIU, Yi-Kan CHENG