Abstract: An antenna system for receiving and transmitting wireless signals includes a first complex antenna including a first reflection element, a first antenna array and a second antenna array; a second complex antenna including a second reflection element, a third antenna array and a fourth antenna array, wherein the first reflection element and the second reflection element are fixed to form an included angle to each other; and a feeding device, coupled to the first complex antenna and the second complex antenna, for alternately outputting radio-frequency signals to the first complex antenna and the second complex antenna, to emit wireless signals via the first complex antenna and the second complex antenna, and switching phases of the radio-frequency signals outputted to the first complex antenna and the second complex antenna, to change characteristics of beam generated by the first complex antenna and the second complex antenna in a vertical plane.

Abstract: An electronic device (such as an access point) may receive a packet (or a frame) from a second electronic device, where the packet includes an encrypted unique identifier of the second electronic device. For example, the encrypted unique identifier may be included in a manufacturer-specific information element in a management packet. Then, the electronic device may decrypt the encrypted unique identifier using an encryption key or a secure hash function to obtain the unique identifier. Next, the electronic device may determine whether the second electronic device is an instance of an authorized access point in the WLAN based at least in part on the unique identifier. Note that the second electronic device may be an instance of an authorized access point when the unique identifier is associated with a manufacturer of the electronic device and/or the second electronic device.

Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.

Abstract: An antenna system includes at least one antenna array. The antenna array includes a dielectric substrate, a ground plane, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a first feeding element, and a second feeding element. The second radiation element is adjacent to the first radiation element. The first radiation element is positioned between the second radiation element and the ground plane. The fourth radiation element is adjacent to the third radiation element. The third radiation element is positioned between the fourth radiation element and the ground plane. The first feeding element is coupled to a first connection point on the first radiation element and a second connection point on the third radiation element. The second feeding element is coupled to a third connection point on the first radiation element and a fourth connection point on the third radiation element.

Abstract: During operation, an electronic device receives a packet or a frame associated with a second electronic device, where the packet or the frame includes information specifying a factory reset command. For example, the second electronic device may be a dynamic host configuration protocol (DHCP) server or may perform functions of a DHCP server. Moreover, the packet or the frame may include an acknowledgment (ACK) in a discover, offer, request and acknowledgment (DORA) procedure, and the information may be included in an option 43 subfield or an option 52 subfield in the packet or the frame. In response to receiving the factory reset command, the electronic device performs a factory reset. Note that the factory reset may restore firmware in the electronic device to a factory-fresh version and a configuration of the electronic device to a factory-fresh state, may erase memory in the electronic device.

Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.

Abstract: An antenna system for receiving and transmitting wireless signals includes a first complex antenna including a first dielectric layer, a first metal grounding sheet, first to fourth antenna arrays and a first transmission line device for transmitting radio-frequency signals to the first to fourth antenna arrays, a second complex antenna including a second dielectric layer, a second metal grounding sheet, fifth to eighth antenna arrays and a second transmission line device for transmitting radio-frequency signals to the fifth to eighth antenna arrays, and a feeding device, for alternatively outputting radio-frequency signals to the first complex antenna and the second complex antenna via the first and second transmission line devices, and switching phases of the radio-frequency signals outputted to the first to eighth antenna arrays.

Abstract: A flow battery apparatus is provided with shunted currents repressed. The apparatus has a positive electrode device, a negative electrode device and a plurality of gas-gap devices. Gas-gap devices are separately set between branching channels and inlet and outlet manifolds of positive and negative electrodes. Each of the branching channels separately has an inserting tube to be inserted into one of the gas-gap devices. The diameter of the inserted vessel of gas-gap devices is bigger than the diameter of the inserting tube connected to a corresponding one of the branching channels. Thus, working liquids transferred to the positive and negative electrodes are segregated with coordination of the gas-gap devices. Only air spaces and discrete liquid drops are left between separated parts of the working liquids. Thus, shunted currents are repressed by preventing conductive paths from being formed between the positive and negative electrodes.

Abstract: A fabricating method of a transistor structure includes providing a substrate with a doped well disposed within the substrate. Later, a gate structure is formed to be disposed on the doped well. Next, a hexagonal-shaped trench is formed to be embedded in the doped well at one side of the gate structure. Subsequently, a first epitaxial layer is formed to be disposed inside the hexagonal-shaped trench and contact the hexagonal-shaped trench, wherein the first epitaxial layer includes first type dopants. Finally, a second epitaxial layer including second-type dopants is formed to be disposed in the hexagon-shaped trench, wherein the first epitaxial layer surrounds the second epitaxial layer, the second epitaxial layer serves as a source/drain doped region of the transistor structure, and the first-type dopants and the second-type dopants are different conductive types.

Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.

Abstract: A MEMS structure includes a substrate, a dielectric layer, a membrane, a backplate, and a blocking layer. The substrate has a through-hole. The dielectric layer is disposed on the substrate and has a cavity in communication with the through-hole. The membrane has at least one vent hole, is embedded in the dielectric layer and together with the dielectric layer defines a first chamber that communicates with the through-hole. The backplate is disposed on the dielectric layer. One end of the blocking layer is embedded in the dielectric layer, and the other end of the blocking layer extends into the cavity; the blocking layer is spatially isolated from the membrane and at least partially overlaps with the at least one vent hole.

Abstract: A MEMS structure includes a substrate, a dielectric layer, a membrane, a backplate, and a blocking layer. The substrate has a through-hole. The dielectric layer is disposed on the substrate and has a cavity in communication with the through-hole. The membrane has at least one vent hole, is embedded in the dielectric layer and together with the dielectric layer defines a first chamber that communicates with the through-hole. The backplate is disposed on the dielectric layer. One end of the blocking layer is embedded in the dielectric layer, and the other end of the blocking layer extends into the cavity; the blocking layer is spatially isolated from the membrane and at least partially overlaps with the at least one vent hole.

Abstract: A display which is able to dissipate heat from points of concentrated heat generation in a backlight module is provided, which includes the backlight module and a cooling module. The cooling module includes a cooling member and a buffer member. The cooling member is a flat sheet, and the cooling member is made of heat-dissipation material. The cooling member is positioned on a surface of the backlight module. The buffer member is made of soft material with adhesiveness and with elasticity. The buffer member is directly adhered on the cooling member through the adhesiveness of the buffer member to fix the cooling member to the backlight module.

Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.

Abstract: A fabricating method of a transistor structure includes providing a substrate with a doped well disposed within the substrate. Later, a gate structure is formed to be disposed on the doped well. Next, a hexagonal-shaped trench is formed to be embedded in the doped well at one side of the gate structure. Subsequently, a first epitaxial layer is formed to be disposed inside the hexagonal-shaped trench and contact the hexagonal-shaped trench, wherein the first epitaxial layer includes first type dopants. Finally, a second epitaxial layer including second-type dopants is formed to be disposed in the hexagon-shaped trench, wherein the first epitaxial layer surrounds the second epitaxial layer, the second epitaxial layer serves as a source/drain doped region of the transistor structure, and the first-type dopants and the second-type dopants are different conductive types.

Abstract: A capacitor cell for a semiconductor device, wherein the capacitor cell comprises: a capacitor having a first node and a second node; a first electrode structure, comprising a first contact point and a second contact point, wherein the first contact point and the second contact point are electrically connected to the first node of said capacitor and located at two different edges of the capacitor cell; and a second electrode structure, comprising a third contact point and a fourth contact point, wherein the third contact point and the fourth contact point are electrically connected to the second node of said capacitor and located at said two different edges of the capacitor cell.

Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.

Abstract: A display screen adjustment method, applied in a display screen includes a display module. The display screen adjustment method includes steps of: displaying a preset picture in a display area of the display module; dividing the display area into a plurality of subareas; detecting whether a brightness of the display area is uniform; determining which subareas have higher brightness than the other subareas; and decreasing light transmittances of pixels in the subareas having higher brightness to offset additional brightness of the pixels that is caused by light leaking of the pixels. An electronic device is also provided.

Abstract: A capacitor cell for a semiconductor device, wherein the capacitor cell comprises: a capacitor having a first node and a second node; a first electrode structure, comprising a first contact point and a second contact point, wherein the first contact point and the second contact point are electrically connected to the first node of said capacitor and located at two different edges of the capacitor cell; and a second electrode structure, comprising a third contact point and a fourth contact point, wherein the third contact point and the fourth contact point are electrically connected to the second node of said capacitor and located at said two different edges of the capacitor cell.

Abstract: An antenna system for receiving and transmitting wireless signals includes a first complex antenna including a first dielectric layer, a first metal grounding sheet, first to fourth antenna arrays and a first transmission line device for transmitting radio-frequency signals to the first to fourth antenna arrays, a second complex antenna including a second dielectric layer, a second metal grounding sheet, fifth to eighth antenna arrays and a second transmission line device for transmitting radio-frequency signals to the fifth to eighth antenna arrays, and a feeding device, for alternatively outputting radio-frequency signals to the first complex antenna and the second complex antenna via the first and second transmission line devices, and switching phases of the radio-frequency signals outputted to the first to eighth antenna arrays.