Abstract: The present invention relates to a chip-fixing device for a socket, which comprises a fixing base body and a movable stop. The socket is assembled in a socket-accommodating recess of the fixing base body. The movable stop is assembled in the fixing base body and controlled in such a manner that a stopper is moved between a first position and a second position, wherein the first position refers to a position where the stopper is located right above the socket, and the second position refers to a position where the stopper is not located right above the socket. Accordingly, the socket-accommodating recess can be used to install sockets of different sizes, and the movable stop can drive the stopper to restrict a chip from falling off the socket or drive the stopper to release the chip, depending on presence or absence of an external force.

Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.

Abstract: A method for fabricating a semiconductor transistor is disclosed. A substrate of a first conductivity type is provided. An ion well of a second conductivity type is formed in the substrate. An epitaxial channel layer of the first conductivity type is grown from the main surface of the substrate. A gate dielectric layer is formed on the epitaxial channel layer. A gate is formed on the gate dielectric layer. A source region and a drain region are then formed in the substrate. The source region and the drain region have the first conductivity type.

Abstract: A centrifugal fan is disclosed and includes a lower case, an impeller and an upper case. The lower case includes a bottom plate and a sidewall. The impeller is disposed on the bottom plate. The upper case is assembled with the sidewall to form an outlet. The upper case is formed by stamping and includes a first plane, an inlet and a grille. When the impeller is rotated, an airflow flowing from the inlet to the outlet is formed. The grille is protruded outwardly from the first plane, and includes a connecting frame and plural ribs. A spacing height is formed between the connecting frame and the inlet. Each rib has a first end connected to the connecting frame and a second end connected to the first plane. A pair of notches are disposed adjacent to two opposite lateral edges of the second end of the corresponding rib, respectively.

Abstract: A servo driven compliant mechanism is provided. The servo driven compliant mechanism includes a holder, a first pivot, a grinding tool, a posture sensor, a displacement sensor, an inner frame, and a first servomotor. The first pivot is perpendicular to an axial direction of the grinding tool. The posture sensor is used for sensing a posture of the grinding tool and sending a posture signal to be transformed into a torque compensation value for an effect of gravity. The displacement sensor is used for sensing a displacement of the grinding tool along the first pivot. The grinding tool is disposed in the inner frame, and the first pivot is movably disposed in the inner frame. The first servomotor is disposed in the inner frame and drives the grinding tool to rotate along the first pivot according to the torque compensation value and the displacement.

Abstract: A stamping quality inspection system includes a stamping device, a signal detecting element, and a processor. The signal detecting element is coupled to the stamping device. The signal detecting element is configured to detect a sound signal and a vibration signal of the stamping device. The processor is coupled to the signal detecting element. The processor is configured to determine a stamping operation time interval according to the sound signal and the vibration signal, to compare a sub sound signal of the sound signal and a sub vibration signal of the vibration signal in the stamping operation time interval to a pattern comparison module, so as to generate a quality inspection result.

Abstract: A slim-type gas transporting device is provided and includes a base plate, a gas pump and a top covering. The base plate includes a first surface, a second surface, an accommodation groove, an outlet groove, a positioning portion, a ventilating hole, a circular truncated cone plug, an inlet tube and an outlet tube. The outlet groove includes an outlet channel in fluid communication with the outlet tube. The positioning portion surrounds the accommodation groove. The ventilating hole having a cone profile is located on the positioning portion and includes an inlet end in communication with the inlet tube and a ventilating end in communication with the accommodation groove. The circular truncated cone plug is accommodated in the ventilating hole. The gas pump is disposed on the accommodation groove and covers the outlet groove. The top covering is disposed on the positioning portion and covers the accommodation groove.

Abstract: A power supply system with UPS, PCS and circuit diagnosis capabilities is disclosed, including: a DC-bus connected to a voltage/current (V/I) meter, a battery energy storage system (ESS) container, a power conditioning system (PCS), at least one current translation unit, and an energy management controller (EMC), wherein, the V/I meter is used to monitor the voltage and current of the DC-bus, and the PCS performs bi-directional conversion between the DC current from the DC-bus and the AC power from an external distribution panel, the current translation unit translate the DC current from the DC-bus into a voltage suitable for at least a critical load, and the EMC controls the operation of the V/I meter, the battery ESS container, the PCS, and the at least one current translation unit, respectively.

Abstract: A propagation delay balance circuit includes a signal generating circuit, a path switching element, and a signal change detecting element. The signal generating circuit includes delay chains for outputting delay signals respectively. The path switching element has input terminals and output terminals. Each output terminal of the path switching element is electrically connected to the input terminal of each delay chain one-to-one, and input terminals of the path switching element are electrically connected one-to-one to the output terminals of the delay chains. The path switching element is controlled by the path switching controlling signal to change the one-to-one internal electrical connection between input terminals and output terminals of the path switching element. The signal change detecting element is electrically connected to the path switching element, and generates a path switching controlling signal according to delay signals of the path switching element.

Abstract: A machine learning system includes a host device and several client devices. The client devices receive a host model from the host device, respectively, and include a first and a second client devices. The first and the second client devices store a first and a second parameter sets, respectively, and perform training on the received host models according to the first and the second parameter sets, respectively, to respectively generate a first and a second training results. If the host device has received the first training result corresponding to an m-th training round but has not received the second training result corresponding to a n-th round training, when a difference between m and n is not higher than a threshold value, the host device updates the host model according to the first training result without using the second training result.

Abstract: An operation method is implemented by a receiver device. The operation method includes following steps: detecting a signal on a transmission line; performing a channel estimation to acquire a length of the transmission line; comparing the length with at least one length threshold value to generate a comparison result; and adjusting a depth of a FIFO process according to the comparison result.

Abstract: A semiconductor transistor is formed on a substrate of a first conductivity type. The substrate has a main surface. An ion well of the second conductivity type is disposed in the substrate. A source region and a drain region spaced apart from the source region are disposed within the ion well. The source region and the drain region have the first conductivity type. An epitaxial channel layer of the first conductivity type is grown from the main surface of the substrate and is disposed between the source region and the drain region. A gate is disposed on the epitaxial channel layer. A gate dielectric layer is disposed between gate and the epitaxial channel layer.

Abstract: A living body specimen transport device for receiving multiple living body specimens has a frame, a rotating bracket, and a storage assembly. The rotating bracket can be rotated with respect to the frame. The storage assembly can receive a container with a living body specimen and be rotated with respect to the rotating bracket. A center of gravity of the storage assembly is lower than a pivoting point where the rotating bracket is mounted on the frame and a pivoting point where the storage assembly is mounted on the rotating bracket. With such structure, even when the living body specimen transport device is vibrated and shaken during transporting and then the frame of the living body specimen transport device is tilted or turned over, the rotating bracket and the storage assembly can rotate to be vertical by themselves, which keeps the living body specimen being soaked in the preservation solution.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a spacer adjacent to the gate structure, forming a recess adjacent to the spacer, trimming part of the spacer, and then forming an epitaxial layer in the recess. Preferably, the semiconductor device includes a first protrusion adjacent to one side of the epitaxial layer and a second protrusion adjacent to another side of the epitaxial layer, the first protrusion includes a V-shape under the spacer and an angle included by the V-shape is greater than 30 degrees and less than 90 degrees.

Abstract: Synthetic amino acid-modified polymers and methods of making the same and using the same are disclosed. The synthetic amino acid-modified polymers possess distinct thermosensitive, improved water-erosion resistant, and enhanced mechanical properties, and are suitable of reducing or preventing formation of postoperative tissue adhesions. Additionally, the amino acid-modified polymers can also be used as a vector to deliver pharmaceutically active agents.

Abstract: The present invention relates to a composition comprising an amino acid-modified polymer, a carboxypolysaccharide, and may further include a metal ion for anti-adhesion and vector application. More specifically, the invention relates to a thermosensitive composition having enhanced mechanical and improved water-erosion resistant properties for efficiently preventing tissue adhesions and can serve as a vector with bio-compatible, bio-degradable/absorbable, and in-vivo sustainable properties.

Abstract: An operation method is implemented by a receiver device. The operation method includes following steps: detecting a signal on a transmission line; performing a channel estimation to acquire a length of the transmission line; comparing the length with at least one length threshold value to generate a comparison result; and adjusting a depth of a FIFO process according to the comparison result.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a wafer over a polishing platen. The wafer includes a metal layer and a dielectric layer. The metal layer covers the dielectric layer and fills an opening of the dielectric layer. The method also includes polishing the wafer using a first operation to thin down the metal layer. The first operation has a first polishing selectivity of the metal layer to the dielectric layer. The method further includes polishing the wafer using a second operation to further thin down the metal layer until the dielectric layer is exposed. The second operation has a second polishing selectivity of the metal layer to the dielectric layer. The second polishing selectivity is different from the first polishing selectivity. The first operation and the second operation are performed in-situ on the polishing platen.

Abstract: A semiconductor transistor is formed on a substrate of a first conductivity type. The substrate has a main surface. An ion well of the second conductivity type is disposed in the substrate. A source region and a drain region spaced apart from the source region are disposed within the ion well. The source region and the drain region have the first conductivity type. An epitaxial channel layer of the first conductivity type is grown from the main surface of the substrate and is disposed between the source region and the drain region. A gate is disposed on the epitaxial channel layer. A gate dielectric layer is disposed between gate and the epitaxial channel layer.

Abstract: An antenna system includes at least one antenna array. The antenna array includes a dielectric substrate, a ground plane, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a first feeding element, and a second feeding element. The second radiation element is adjacent to the first radiation element. The first radiation element is positioned between the second radiation element and the ground plane. The fourth radiation element is adjacent to the third radiation element. The third radiation element is positioned between the fourth radiation element and the ground plane. The first feeding element is coupled to a first connection point on the first radiation element and a second connection point on the third radiation element. The second feeding element is coupled to a third connection point on the first radiation element and a fourth connection point on the third radiation element.