Abstract: A process of producing optical devices is provided including transferring a first substrate comprising one or more devices to a laser dicing tool, the laser dicing tool including a filamentation stage and a singulation stage. One or more device contours are created on the first substrate in the filamentation stage. The optical devices are singulated from the first substrate along the one or more device contours in the singulation stage. The devices are transferred to storage or for further backend processing.

Abstract: This disclosure provides a method, a computing system, and a computer program product for managing prefetching of pages in a database system. The method comprises obtaining shared information associated with page access, wherein the shared information associated with the page access includes information associated with the page access from a plurality of computing nodes. The method further comprises determining whether to prefetch a number of pages into a global buffer pool based at least on the shared information associated with the page access using a sequential prefetching method.

Abstract: An LED driving device with an adjustable dimming depth is provided. The LED driving device includes an LED driver and a dimming depth control circuit. The LED driver includes a dimming control circuit and a driving circuit. The dimming control circuit generates a first pulse-width modulation (PWM) signal according to a first brightness indication signal. The driving circuit drives a first light source and adjusts a brightness of the first light source. A duty ratio of the first PWM signal and the first driving current have a first relationship therebetween. The dimming depth control circuit includes a first variable resistance circuit, and the first variable resistance circuit controls a magnitude of a first variable resistance between a first current sampling terminal and a ground terminal according to a first dimming depth control signal. The first relationship defines a first dimming depth that varies with the first variable resistance.

Abstract: An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.

Abstract: The present disclosure generally relates to stacked miniaturized electronic devices and methods of forming the same. More specifically, embodiments described herein relate to semiconductor device spacers and methods of forming the same. The semiconductor device spacers described herein may be utilized to form stacked semiconductor package assemblies, stacked PCB assemblies, and the like.

Abstract: An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.

Abstract: Disclosed are a vertical motion protection method and device based on a dual-stage motion system of a photolithography machine. The method comprises: according to a distance between measured points and reference points of the eddy current sensor and coordinates of the reference points of the eddy current sensor, calculating coordinates of the measured points on a lower surface of the micro-motion stage respectively; calculating a point normal form equation of the micro-motion stage at the current time using measured coordinates of the measured points on the micro-motion stage, then substituting X and Y coordinates of the measured points on the translated micro-motion stage to determine a maximum height of the micro-motion stage at the current time; and comparing the maximum height with a height threshold, if the maximum height exceeds the height threshold, shutting down for protection, or else continuing to operate the system.

Abstract: The disclosure relates to a 5th Generation (5G) or 6th Generation (6G) communication system for supporting a higher data transmission rate. Embodiments of the present disclosure provide a carrier management method, a resource allocation method and related devices, relating to the technical field of communication. The carrier management method comprises: receiving an access request from a user equipment (UE); and, determining, from candidate component carriers (CCs), a primary cell (Pcell) of the UE based on the per-resource block (RB) throughput corresponding to each candidate CC.

Abstract: The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

Abstract: Methods of dicing optical devices from an optical device substrate are disclosed. The methods include disposing a protective coating only over the optical devices. The optical device substrate includes the optical devices disposed on the surface of the optical device substrate with areas therebetween. The areas of the optical device substrate are exposed by the protective coating. The protective coating includes a polymer, a solvent, and an additive. The methods further include curing the protective coating via a cure process so that the protective coating is water-soluble after the solvent is removed by the cure process, dicing the optical devices from the optical device substrate by projecting a laser beam to the areas between the optical devices, and exposing the protective coating to water to remove the protective coating from the optical devices that are diced.

Abstract: The present disclosure generally relates to stacked miniaturized electronic devices and methods of forming the same. More specifically, embodiments described herein relate to semiconductor device spacers and methods of forming the same. The semiconductor device spacers described herein may be utilized to form stacked semiconductor package assemblies, stacked PCB assemblies, and the like.

Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Abstract: The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

Abstract: A method and apparatus for dicing optical devices from a substrate are described herein. The method includes the formation of a plurality of trenches using radiation pulses delivered to the substrate. The radiation pulses are delivered in a pattern to form trenches with varying depth as the trenches extend outward from a top surface of the optical device. The varying depth of the trenches provides edges of each of the optical devices which are slanted. The radiation pulses are UV radiation pulses and are delivered in bursts around the silhouette of the optical devices.

Abstract: Embodiments of the present disclosure provide a BWP allocation method, apparatus, electronic device, and a computer-readable storage medium, and relate to the field of communication technologies. The method includes: acquiring service-related information of at least one base station; determining configuration information of the bandwidth part (BWP) of the at least one base station based on the service-related information of the at least one base station; and configuring the BWP of the at least one base station based on the configuration information. The BWP allocation method may meet requirements of different services and different user capabilities, improve a network throughput, and reduce energy consumption.

Abstract: Methods and apparatuses for processing lithium batteries with a laser source having a wide process window, high efficiency, and low cost are provided. The laser source is adapted to achieve high average power and a high frequency of picosecond pulses. The laser source can produce a line-shaped beam either in a fixed position or in scanning mode. The system can be operated in a dry room or vacuum environment. The system can include a debris removal mechanism, for example, inert gas flow, to the processing site to remove debris produced during the patterning process.

Abstract: A device for efficiently separating ethyl tin from molten crude tin is disclosed. The device includes grab buckets, connecting rods, an inverted T-shaped push rod, alloy legs, a hanger plate, a cylinder and a lifting ring; wherein one end of the connecting rod is fixedly connected with one side of the grab bucket, and the other end of the connecting rod is detachably connected with the bottom end of the inverted T-shaped push rod; a top flange of the inverted T-shaped push rod is detachably connected with the bottom flange of the cylinder through threads, and the inverted T-shaped push rod is powered by the cylinder to push and pull. The device has simple structure, small volume, light weight, convenient use and placement, reduced occupancy rate of production site space and flexible use; the invention adopts a remote control mode, mechanized operation, higher safety and labor saving.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Abstract: A method and apparatus for substrate dicing are described. The method includes utilizing a laser to dice a substrate along a dicing path to form a perforated line around each device within the substrate. The dicing path is created by exposing the substrate to bursts of laser pulses at different locations around each device. The laser pulses are delivered to the substrate and may have a pulse repetition frequency of greater than about 25 MHz, a pulse width of less than about 15 picoseconds, and a laser wavelength of about 1.0 ?m to about 5 ?m.