Abstract: A round wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver-based wire core, wherein the coating layer is a double-layer comprised of a 1 to 100 nm thick inner layer of palladium or nickel and an adjacent 1 to 250 nm thick outer layer of gold, wherein the outer layer of gold exhibits at least one of the following intrinsic properties A1) and A2): A1) the average grain size of the crystal grains in the outer layer of gold, measured in longitudinal direction, is in the range of 0.1 to 0.8 ?m; A2) 60 to 100% of the crystal grains in the outer layer of gold are oriented in <100> direction, and 0 to 20% of the crystal grains in the outer layer of gold are oriented in <111> direction.

Abstract: Various embodiments provide for replicating a share across deployments of a data platform, where the share can be on a source deployment and the share can be replicated on one or more target deployments, and where the share is replicated with one or more database objects of the source deployment associated with the share. Some embodiments analyze the share to be replicated and, based on the analysis, determine one or more database objects that would be replicated to the one or more target deployments to enable a replica of the share on the one or more target deployments.

Abstract: A method includes forming an ILD to cover a gate stack of a transistor. The ILD and the gate stack are parts of a wafer. The ILD is etched to form a contact opening, and a source/drain region of the transistor or a gate electrode in the gate stack is exposed through the contact opening. A conductive capping layer is formed to extend into the contact opening. A metal-containing material is plated on the conductive capping layer in a plating solution using electrochemical plating. The metal-containing material has a portion filling the contact opening. The plating solution has a sulfur content lower than about 100 ppm. A planarization is performed on the wafer to remove excess portions of the metal-containing material. A remaining portion of the metal-containing material and a remaining portion of the conductive capping layer in combination form a contact plug.

Abstract: In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.

Abstract: Disclosed are non-transitory computer-readable media, systems, and computer-implemented methods that describe obtaining hot spot (HS) location information with respect to a printed pattern; obtaining LFP search criteria for searching the printed pattern to determine a local focus point (LFP) for an imaging device; selecting a HS area in the printed pattern that contains a HS; and determining the LFP proximate to the HS area based on the LFP search criteria, the LFP not containing the HS.

Abstract: A memory device includes a memory array having a plurality of memory cells arranged along a plurality of rows extending in a row direction and a plurality of columns extending in a column direction. The memory array also includes a plurality of write assist cells connected to the plurality of memory cells. At least one write assist cell of the plurality of write assist cells is in each of the plurality of columns and connected to respective ones of the plurality of memory cells in a same column.

Abstract: A semiconductor arrangement includes a memory array including bitcells and a peripheral logic block for accessing the bitcells. The peripheral logic block includes a first nanostructure having a first width for providing power to a first logic unit of the peripheral logic block, and a second nanostructure axially aligned with the first nanostructure and having a second width less than the first width for providing power to a second logic unit of the peripheral logic block.

Abstract: Provided herein are systems and methods for compatibility verification for listing auto-fulfillment. A system includes at least one hardware processor coupled to a memory and configured to decode a request for replication of data from a primary deployment account of a data provider to an account of a data consumer. A share object is retrieved in response to the request. The share object specifies a first plurality of data objects associated with the data. A determination is performed of the compatibility of each data object of the first plurality of data objects with the replication. A notification of the compatibility of each data object of the first plurality of data objects is output to the primary deployment account of the data provider.

Abstract: A multilevel-cache-based data processing method is provided, which is applied to a server computing device. The server computing device includes a first-level cache and a second-level cache. The first-level cache includes a plurality of first-type storage nodes. The second-level cache includes a plurality of second-type storage nodes. The data processing method includes identifying a target node based on a current hash ring in response to receiving a read request; determining whether the target node is any one of the plurality of first-type storage nodes; and in response to determining that the target node is not any one of the plurality of first-type storage nodes, reading response data from the plurality of second-type storage nodes for responding to the read request, and returning the response data. According to the method, a speed of responding to the read request can be increased, and pressure of the first-level cache can be reduced.

Abstract: Provided is a light source module, including a light emitting element and a light splitting module. The light emitting element provides a first beam. The light splitting module converts the first beam into multiple light splitting beams. The light splitting module includes a first light splitting element, a first optical element, and a reflective element. The first light splitting element is configured to divide the first beam into a first light splitting beam and a second beam. The first optical element is disposed on a transmission path of the second beam, and is configured to change a polarization state of the second beam. The reflective element is disposed on a transmission path of the first light splitting beam or a transmission path of at least part of the second beam. The light splitting beams include the first light splitting beam and the at least part of the second beam.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer over the substrate, a second epitaxial layer over the first epitaxial layer, and a photodiode in at least one of the first epitaxial layer or the second epitaxial layer. The photodiode includes a first doped region and a second doped region over the first doped region.

Abstract: Methods are disclosed for generating a sample map and processing a sample. In one arrangement, a method comprises measuring a position of a first mark in each of a plurality of field regions on sample. A first model is fitted to the measured positions of the first marks. The fitted first model represents positions of the field regions. The method comprises measuring positions of a plurality of second marks in one field region or in each of a plurality of field regions. A second model is fitted to the measured positions of the second marks. The fitted second model represents a shape of each field region. A sample map is output using the fitted first and second models.

Abstract: This application discloses an artificial intelligence (AI) based animation character drive method. A first expression base of a first animation character corresponding to a speaker is determined by acquiring media data including a facial expression change when the speaker says a speech, and the first expression base may reflect different expressions of the first animation character. After target text information is obtained, an acoustic feature and a target expression parameter corresponding to the target text information are determined according to the target text information, the foregoing acquired media data, and the first expression base. A second animation character having a second expression base may be driven according to the acoustic feature and the target expression parameter, so that the second animation character may simulate the speaker's sound and facial expression when saying the target text information, thereby improving experience of interaction between the user and the animation character.

Abstract: Provided by the present disclosure are a display panel and a display apparatus. The display panel has a display area, the display area has an irregular boundary and includes a main display area and a transition display area between the main display area and the irregular boundary; the display area includes a plurality of sub-pixels arranged in an array along a row direction and a column direction, each sub-pixel in the transition display area has a light-shielding block, and an area of the light-shielding block is smaller than an area of the sub-pixel; the transition display area is divided into a first area, a second area and a third area successively disposed in sequence along an extension direction of the irregular boundary; in the first area and the third area, each sub-pixel includes one light-shielding block, and the light-shielding block in each sub-pixel is provided close to the irregular boundary.

Abstract: A display substrate includes a display region and a peripheral region surrounding the display region, the peripheral region includes a bonding region and a profiled region, the display region is between the bonding region and the profiled region. The display substrate further includes a plurality of compensation scanning lines and a plurality of data lines, at least one of the compensation scanning lines includes a portion in the profiled region, and at least one of the data lines includes a portion in the display region and a portion in the profiled region. An electrostatic discharge circuit and a loading compensation structure are arranged in the profiled region, at least part of the electrostatic discharge circuit is located between the display region and the loading compensation structure, and the electrostatic discharge circuit is coupled to the plurality of data lines.

Abstract: This application discloses a domain name resolution method and apparatus, and a computing system. The method includes: receiving a resource address entered by a user, obtaining a target domain name corresponding to the resource address, where the target domain name is generated based on a preset domain name encryption rule, and the preset domain name encryption rule is applied to combine a domain name field and an IP address into the target domain name; and parsing the target domain name and obtaining the IP address in the target domain name based on a preset domain name decryption rule. This application further provides a computer-readable storage medium. In this application, the resource address entered by the user is directly resolved, so that the IP address can be rapidly obtained through resolution, thereby shortening domain name resolution time and improving domain name resolution efficiency.

Abstract: A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.

Abstract: A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; a transfer gate structure formed between the photosensitive region and the storage node to regulate a transfer of the photo-induced electrical charge therebetween; an inter-layer dielectric (ILD) formed over the transfer gate structure; and a light-shielding structure contained within the ILD and covering the transfer gate structure so as to inhibit light from reaching the transfer gate structure, the light-shielding structure including an indentation on a first end surface of the light-shielding structure, which first end surface is proximate to the transfer gate structure, wherein a

Abstract: An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type and a fourth active region of a fourth set of transistors of a second type. The first, second, third and fourth active regions extend in a first direction, and are in a first level. The first and second active regions are adjacent to a first boundary and have a first width in a second direction. The third active region is adjacent to a second boundary, and has a second width. The fourth active region is between the second active region and the third active region, and has the first width.

Abstract: A memory device includes a memory array having a plurality of memory cells arranged along a plurality of rows extending in a row direction and a plurality of columns extending in a column direction. The memory array also includes a plurality of write assist cells connected to the plurality of memory cells. At least one write assist cell of the plurality of write assist cells is in each of the plurality of columns and connected to respective ones of the plurality of memory cells in a same column.