Abstract: Provided are a stable pharmaceutical composition of an anti-IL-17A antibody and an application thereof in medicine. The pharmaceutical composition contains an anti-IL-17A antibody or an antigen-binding fragment thereof, and a buffer, can further contain at least one stabilizer, and can further contain a surfactant.

Abstract: A semiconductor structure includes a substrate, a buried oxide layer formed in the substrate and near a surface of the substrate, a gate dielectric layer formed on the substrate and covering the buried oxide layer, a gate structure formed on the gate dielectric layer and overlapping the buried oxide layer, and a source region and a drain region formed in the substrate and at two sides of the gate structure.

Abstract: The present invention provides a stable pharmaceutical composition comprising an anti-BTLA (B and T lymphocyte attenuator) antibody and use thereof in medicines. The pharmaceutical composition comprises an anti-BTLA antibody and a buffer, further comprises at least one stabilizer, and optionally further comprises a surfactant.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: The present invention provides an antibody or a functional fragment thereof that specifically binds to IL-17A with high affinity. Also provided are a nucleic acid molecule encoding the antibody or the functional fragment thereof disclosed herein, an expression vector and a host cell for expressing the antibody or the functional fragment thereof disclosed herein, and a method for preparing the antibody or the functional fragment thereof disclosed herein. The present invention also provides a pharmaceutical composition comprising the antibody or the functional fragment thereof disclosed herein, and use of the antibody or the functional fragment thereof disclosed herein for treating an immune dysfunction disease.

Abstract: A dredging device for dredging a pipe is provided including: a carrying frame, adapted to connected to a pipe; a shaking dredging unit including a first shaking plate and a second shaking plate, and the first shaking plate and the second shaking plate are arranged within the pipe; and a driving unit, connected to the carrying frame. The driving unit is connected to the first shaking plate and the second shaking plate for driving the first shaking plate and the second shaking plate to reciprocate to approach or move away from each other.

Abstract: Disclosed are a resource allocation method and a system, a terminal device, and a network device. The method includes: sending a message carrying a terminal type of a terminal device to a network device; and receiving resource allocation information of the terminal device, sent by the network device, the resource allocation information being obtained by the network device according to the terminal type. The terminal device can actively report the terminal type to the network device, such that the network device can perform rational resource allocation on the terminal device according to the terminal type, thereby reducing the waste of network resources and improving the rationality of terminal services.

Abstract: Disclosed by embodiments of the present disclosure are a method for processing a relax measurement parameter update, a terminal device, and a computer-readable storage medium. When a network device changes a relax measurement configuration parameter in system information, the terminal device may still independently determine the use of a new relax measurement configuration parameter according to its own conditions, which perfects protocol implementation and allows the terminal device to have more reasonable performance.

Abstract: A heat dissipation structure, includes: a lead frame, including a high temperature pad and a low temperature pad, the high temperature pad and the low temperature pad being two portions in the lead frame which are separated from each other, wherein a high heat generation component is disposed on the high temperature pad; and a high thermal conduction element, including two sides which are respectively directly connected with the high temperature pad and the low temperature pad, to dissipate the heat energy from the high heat generation component to the low temperature pad.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive bump over and electrically connected to the chip. The chip package structure includes a ring-like structure over and electrically insulated from the chip. The ring-like structure surrounds the conductive bump, and the ring-like structure and the conductive bump are made of a same material.

Abstract: A semiconductor structure includes a substrate, a buried oxide layer formed in the substrate and near a surface of the substrate, a gate dielectric layer formed on the substrate and covering the buried oxide layer, a gate structure formed on the gate dielectric layer and overlapping the buried oxide layer, and a source region and a drain region formed in the substrate and at two sides of the gate structure.

Abstract: The present disclosure relates to use of an anti-PD-1 antibody and/or an antigen-binding fragment thereof in the treatment of a malignancy. In particular, the present disclosure relates to use of an anti-PD-1 antibody and/or an antigen-binding fragment thereof in the treatment of a sarcoma, alveolar soft part sarcoma, angiosarcoma and undifferentiated polymorphic sarcoma, and use of an anti-PD-1 antibody and/or an antigen-binding fragment thereof in the treatment of lymphoma.

Abstract: The present disclosure relates to use of an anti-PD-1 antibody in the treatment of melanoma. The present disclosure also relates to use of an agent for detecting BRAF, NRAS, and CDK4/CCND1 gene mutations in a detection kit for predicting the therapeutic effect of an anti-PD-1 antibody and/or an antigen-binding fragment thereof administered alone to a patient with melanoma.

Abstract: Disclosed is a cell measurement method based on frequency point optimization. The method includes: when a cell measurement condition is satisfied, if a current serving cell of a terminal device matches a serving cell in a stored measurement record, measuring cell information of a frequency point corresponding to the highest measurement priority in the measurement record. When the cell measurement condition is satisfied and the current serving cell of the terminal device does not match a serving cell in the measurement record, if the current serving cell is a cell corresponding to the frequency point corresponding to the highest measurement priority in the measurement record, measuring cell information of the frequency point corresponding to the highest measurement priority in the measurement record.

Abstract: Provided are an improved uricase, a method for treating hyperuricemia using the same, and a corresponding pharmaceutical composition. The improved uricase comprises an amino acid sequence having at least about 90% identity with SEQ ID NO: 1, wherein the sequence is not SEQ ID NO: 1.

Abstract: A compiler includes a front-end module, an optimization module, and a back-end module. The front-end module pre-processes a source code to generate an intermediate code. The optimization module optimizes the intermediate code. The back-end module translates the optimized intermediate code to generate a machine code. Optimization includes translating a branch instruction in the intermediate code into performing the following operations: establishing a post dominator tree for the branch instruction to find an immediate post dominator of the branch instruction as a reconverge point of a first path and a second path of the branch instruction; inserting a specific instruction at the front end of the reconverge point, so as to jumping to execute the instructions of the second path on the condition that once the specific instruction on the first path is executed.

Abstract: There are provided bivalent compounds and conjugates thereof, the conjugates comprising a bivalent compound, a targeting moiety, and a bioactive agent, as well as pharmaceutical compositions and methods of use of the conjugate for the treatment, inhibition, or prevention of diseases and disorders which are therapeutic targets of the bioactive agent.

Abstract: A high-voltage transistor device includes a semiconductor substrate, an isolation structure, a gate dielectric layer, a gate, a source region and a drain region. The semiconductor substrate has a plurality of grooves extending downward from a surface of the semiconductor substrate to form a sawtooth sectional profile. The isolation structure is disposed on the outside of the plurality of grooves, and extends from the surface downwards into the semiconductor substrate to define a high-voltage area. The gate dielectric layer is disposed on the high-voltage area and partially filled in the plurality of grooves. The gate is disposed on the gate dielectric layer. The source region and the drain region are respectively disposed in the semiconductor substrate and isolated from each other.

Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.