Patents by Inventor Sheng Yao

Sheng Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220363754
    Abstract: Provided are antibodies that bind specifically to TIGIT or antigen binding fragments of the antibodies and a composition thereof. Also provided are a nucleic acid molecule coding the antibodies or the antigen binding fragments thereof, an expression vector and a host cell for expressing the antibodies or the antigen binding fragments thereof, and therapeutic and diagnostic uses of the antibodies.
    Type: Application
    Filed: July 14, 2020
    Publication date: November 17, 2022
    Applicants: SHANGHAI JUNSHI BIOSCIENCES CO., LTD., SUZHOU JUNMENG BIOSCIENCES CO., LTD.
    Inventors: Qin MENG, Jian YAO, Hui FENG, Sheng YAO, Hai WU
  • Patent number: 11476343
    Abstract: A high-voltage transistor device includes a semiconductor substrate, an isolation structure, a gate dielectric layer, a gate, a source region and a drain region. The semiconductor substrate has a plurality of grooves extending downward from a surface of the semiconductor substrate to form a sawtooth sectional profile. The isolation structure is disposed on the outside of the plurality of grooves, and extends from the surface downwards into the semiconductor substrate to define a high-voltage area. The gate dielectric layer is disposed on the high-voltage area and partially filled in the plurality of grooves. The gate is disposed on the gate dielectric layer. The source region and the drain region are respectively disposed in the semiconductor substrate and isolated from each other.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: October 18, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Sheng-Yao Huang, Yu-Ruei Chen, Zen-Jay Tsai, Yu-Hsiang Lin
  • Publication number: 20220320147
    Abstract: A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at waist parts thereof. A gate structure layer is disposed on the supporting dielectric layer and covers a portion of the fin structures.
    Type: Application
    Filed: June 20, 2022
    Publication date: October 6, 2022
    Applicant: United Microelectronics Corp.
    Inventors: Sheng-Yao Huang, Yu-Ruei Chen, Chung-Liang Chu, Zen-Jay Tsai, Yu-Hsiang Lin
  • Publication number: 20220295834
    Abstract: The present invention relates to a method of storing and transporting cooked tapioca pearls in edible oil at low temperature (0° F. to 41° F.). Even though retrogradation happens under these conditions, the texture of tapioca pearls can be restored like just cooked by reheating in the oil to above starch gel temperature. The restored texture of tapioca pearls can be kept unchanged as long as the temperature is above their gel temperature.
    Type: Application
    Filed: March 21, 2021
    Publication date: September 22, 2022
    Inventor: Sheng Yao
  • Patent number: 11417685
    Abstract: A fin transistor structure is provided. The fin transistor structure includes a first substrate. An insulation layer is disposed on the first substrate. A plurality of fin structures are disposed on the insulation layer. A supporting dielectric layer fixes the fin structures at the fin structures at waist parts thereof. A gate structure layer is disposed on the supporting dielectric layer and covers a portion of the fin structures.
    Type: Grant
    Filed: November 29, 2019
    Date of Patent: August 16, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Sheng-Yao Huang, Yu-Ruei Chen, Chung-Liang Chu, Zen-Jay Tsai, Yu-Hsiang Lin
  • Patent number: 11414427
    Abstract: Disclosed are stemospironine salts of Formula 1: wherein HX represents HCl, HBr, L-tartaric acid, D-tartaric acid, sulfuric acid, (+)-(1S)-10-camphorsulfonic acid, ethanesulfonic acid and ethane-1,2-disulfonic acid. This invention also provides crystalline polymorph forms of the compound of Formula 1 wherein HX is HCl, stemospironine hydrochloride. This invention also provides a new crystalline form of the compound of Formula 2, stemospironine free base: Also disclosed are compositions containing one or more compounds of Formula 1, methods for controlling cough comprising administering a therapeutically effective amount of a compound of Formula 1, and methods for preparing compounds of Formula 1. Also disclosed is a method for preparing crystalline stemospironine hydrochloride polymorph Form II from stemospironine hydrochloride polymorph Form I.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: August 16, 2022
    Inventors: Yang Ye, Sheng Yao, Hui-Yin Li, Qun Li
  • Publication number: 20220238673
    Abstract: A high-voltage transistor device includes a semiconductor substrate, an isolation structure, a gate dielectric layer, a gate, a source region and a drain region. The semiconductor substrate has a plurality of grooves extending downward from a surface of the semiconductor substrate to form a sawtooth sectional profile. The isolation structure is disposed on the outside of the plurality of grooves, and extends from the surface downwards into the semiconductor substrate to define a high-voltage area. The gate dielectric layer is disposed on the high-voltage area and partially filled in the plurality of grooves. The gate is disposed on the gate dielectric layer. The source region and the drain region are respectively disposed in the semiconductor substrate and isolated from each other.
    Type: Application
    Filed: March 26, 2021
    Publication date: July 28, 2022
    Inventors: Sheng-Yao HUANG, Yu-Ruei CHEN, Zen-Jay TSAI, Yu-Hsiang LIN
  • Publication number: 20220206768
    Abstract: A compiler includes a front-end module, an optimization module, and a back-end module. The front-end module pre-processes a source code to generate an intermediate code. The optimization module optimizes the intermediate code. The back-end module translates the optimized intermediate code to generate a machine code. Optimization includes translating a branch instruction in the intermediate code into performing the following operations: establishing a post dominator tree for the branch instruction to find an immediate post dominator of the branch instruction as a reconverge point of a first path and a second path of the branch instruction; inserting a specific instruction at the front end of the reconverge point, so as to jumping to execute the instructions of the second path on the condition that once the specific instruction on the first path is executed.
    Type: Application
    Filed: March 29, 2021
    Publication date: June 30, 2022
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Chung-ho Chen, Dun-jie Chen, Feng-ming Hsu, Sheng-yao Lin
  • Patent number: 11342465
    Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
    Type: Grant
    Filed: January 3, 2021
    Date of Patent: May 24, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Ming Lai, Yen-Chen Chen, Jen-Po Huang, Sheng-Yao Huang, Hui-Ling Chen, Qinggang Xing, Ding-Lung Chen, Li Li Ding, Yao-Hung Liu
  • Publication number: 20220154296
    Abstract: The present invention relates to use of an anti-PD-1 antibody in the treatment of a tumor. The present invention also relates to use of a reagent for detecting a gene amplification in the chromosome 11q13 region in a test kit for predicting the therapeutic effect of the anti-PD-1 antibody and/or the antigen-binding fragment thereof on a tumor patient.
    Type: Application
    Filed: April 16, 2020
    Publication date: May 19, 2022
    Inventors: Hui Feng, Hai Wu, Sheng Yao
  • Publication number: 20220140139
    Abstract: A semiconductor structure includes a substrate, a buried oxide layer formed in the substrate and near a surface of the substrate, a gate dielectric layer formed on the substrate and covering the buried oxide layer, a gate structure formed on the gate dielectric layer and overlapping the buried oxide layer, and a source region and a drain region formed in the substrate and at two sides of the gate structure.
    Type: Application
    Filed: December 2, 2020
    Publication date: May 5, 2022
    Inventors: Sheng-Yao Huang, Yu-Ruei Chen, Zen-Jay Tsai, Yu-Hsiang Lin
  • Patent number: 11267890
    Abstract: An antibody or a functional fragment thereof that specifically bind to PD-L1 with high affinity, a nucleic acid molecule that encodes said antibody or the functional fragment thereof, an expression vector and a host cell for use in expressing said antibody or the functional fragment thereof, and a method for producing said antibody or the functional fragment thereof. An immunoconjugate and a pharmaceutical composition containing said antibody or the functional fragment thereof, and a method for using said antibody or the functional fragment thereof to enhance the function of a T cell so as to up-regulate a cell-mediated immune response, for use in treating diseases caused by T cell dysfunction.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: March 8, 2022
    Assignees: SHANGHAI JUNSHI BIOSCIENCES INC., SUZHOU JUNMENG BIOSCIENCES CO., LTD.
    Inventors: Hai Wu, Sheng Yao, Yuehua Zhou, Jian Yao, Dan Meng, Hui Feng
  • Publication number: 20220070058
    Abstract: The present invention provides a connection device which is adapted to be connected between an electronic device and a host-side device.
    Type: Application
    Filed: August 12, 2021
    Publication date: March 3, 2022
    Inventors: Ming-Hung LEE, Sheng-Yao CHENG, Shu-Hao WU
  • Patent number: 11224844
    Abstract: A porous membrane includes a modacrylic copolymer. The modacrylic copolymer includes, with respect to 100 parts by mass of all structural units constituting the modacrylic copolymer, 15 to 85 parts by mass of a structural unit derived from acrylonitrile, 15 to 85 parts by mass of a structural unit derived from at least one halogen-containing monomer selected from the group consisting of vinyl halide and vinylidene halide, and 0 to 10 parts by mass of a structural unit derived from a vinyl monomer having an ionic substituent. The porous membrane can be produced by preparing a modacrylic copolymer solution by dissolving the modacrylic copolymer in a solvent, and bringing the modacrylic copolymer solution into contact with a non-solvent for the modacrylic copolymer such that the modacrylic copolymer solution is solidified.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: January 18, 2022
    Assignee: KANEKA CORPORATION
    Inventors: Yusuke Hirai, Tadashi Kamada, Hideto Matsuyama, Li-Feng Fang, Sheng-Yao Wang
  • Publication number: 20210375821
    Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.
    Type: Application
    Filed: August 5, 2021
    Publication date: December 2, 2021
    Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
  • Publication number: 20210364620
    Abstract: The present disclosure provides a smart automatic frequency control (AFC) apparatus, including: a phase shift module, connected to a first signal input terminal and configured to: receive an incident wave from the first signal input terminal, perform a phase shift on the incident wave according to a phase shift parameter so as to generate a phase-shifted signal, and output the phase-shifted signal to a phase detection module; and the phase detection module, connected to the phase shift module and a second signal input terminal and configured to: receive a reflected wave from the second signal input terminal, perform a phase detection on the phase-shifted signal and the reflected wave so as to generate a phase difference signal, and output the phase difference signal via a control interface.
    Type: Application
    Filed: June 6, 2019
    Publication date: November 25, 2021
    Inventors: Shangmin SUN, Yu HU, Sheng YAO, Tao WANG, Xibin YIN
  • Publication number: 20210336059
    Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
    Type: Application
    Filed: July 6, 2021
    Publication date: October 28, 2021
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Ming Lai, Yen-Chen Chen, Jen-Po Huang, Sheng-Yao Huang, Hui-Ling Chen, Qinggang Xing, Ding-Lung Chen, Li Li Ding, Yao-Hung Liu
  • Patent number: 11128304
    Abstract: A clock and data recovery device and a jitter tolerance enhancement method thereof are provided. The clock and data recovery device includes a clock and data recovery circuit and a jitter tolerance enhancement circuit. A data input terminal of the clock and data recovery circuit is suitable for receiving a data signal. The clock and data recovery circuit recovers the data signal to a clock. The jitter tolerance enhancement circuit is coupled to the data input terminal of the clock and data recovery circuit to receive the data signal. The jitter tolerance enhancement circuit detects a correlation between the data signal and the clock and correspondingly adjusts a loop gain of the clock and data recovery circuit according to the correlation.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: September 21, 2021
    Assignee: Novatek Microelectronics Corp.
    Inventors: Yun-Sheng Yao, Shen-Iuan Liu, Yen-Long Lee, Peng-Yu Chen, Chih-Hao Huang, Yao-Hung Kuo
  • Publication number: 20210247426
    Abstract: The present disclosure relates to methods and systems for managing and controlling resources. A system for managing and controlling resources may comprise a storage device configured to store a set of instructions, one or more processors configured to communicate with the storage device. When executing the set of instructions, the one or more processors may be configured to cause the system to collect resource usage data through one or more meters, process the resource usage data based on a preset algorithm to determine resource usage state, and control at least the one or more meters and/or one or more smart devices to perform specified operations based on the resource usage state. The present disclosure provides methods and systems for managing and controlling resources based on meters or smart devices controlled by the network.
    Type: Application
    Filed: June 15, 2019
    Publication date: August 12, 2021
    Applicant: METIS IP (SUZHOU) LLC
    Inventors: Lifeng LIU, Huasheng LIU, Guoliang LI, Jiaming PAN, Liu TAN, Canjin GAO, Sheng YAO, Wenhao LU, Zhiwei YE
  • Publication number: 20210246209
    Abstract: The present invention relates to an anti-BTLA antibody or an antigen-binding fragment thereof comprising: at least one light chain CDR domain selected from SEQ ID NOs: 7, 8, 9, 10, 11, 12, 16, 17, 18, 22, 23, 24, 31, 32 and 33, and/or at least one heavy chain CDR domain selected from SEQ ID NOs: 1, 2, 3, 4, 5, 6, 13, 14, 15, 19, 20, 21, 25, 26, 27, 28, 29 and 30. The present invention also relates to a nucleic acid molecule encoding the antibody or the antigen-binding fragment thereof, a corresponding expression vector and a host cell, as well as therapeutic use of the antibody or the antigen-binding fragment thereof, the nucleic acid molecule, the expression vector and the host cell.
    Type: Application
    Filed: February 1, 2021
    Publication date: August 12, 2021
    Inventors: Hai WU, Jian YAO, Sheng YAO, Hui FENG, Jing ZHANG, Yuehua ZHOU