Abstract: The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.

Abstract: A test key structure for use in measuring step height includes a substrate, and a pair of test contacts. The substrate includes an isolation region and a diffusion region. The test contact pair includes a first test contact and a second test contact for measuring electrical resistances. The first test contact is disposed on the diffusion region and the second test contact is disposed on the isolation region.

Abstract: A method for inspecting a photoresist pattern is disclosed. First, a substrate with a first doping region is provided. Then, a photoresist is formed to cover the substrate. Later, the photoresist is patterned to form a photoresist pattern. Afterwards, the substrate is doped by using the photoresist pattern, and a PN junction exists in the first doping region. Thereafter, a current passing through the PN junction is tested to inspect the photoresist pattern.

Abstract: A semiconductor circuit structure includes a substrate and an interconnect structure. The interconnect structure is disposed on the substrate and includes a plurality of circuit patterns and at least one closed loop pattern. The closed loop pattern is in a same layer with the circuit patterns, surrounds between the circuit patterns and is insulated from the circuit patterns. The closed loop pattern can protect the circuit patterns from being damaged by stresses, for improving a mechanical strength of the semiconductor circuit structure.

Abstract: A method for inspecting a photoresist pattern is disclosed. First, a substrate with a first doping region is provided. Then, a photoresist is formed to cover the substrate. Later, the photoresist is patterned to form a photoresist pattern. Afterwards, the substrate is doped by using the photoresist pattern, and a PN junction exists in the first doping region. Thereafter, a current passing through the PN junction is tested to inspect the photoresist pattern.

Abstract: A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and bottom insulating layers. The fuse layer is connected to the other metal layers through via plugs. The fuse layer includes separate blocks and at least a connecting block and is coupled to at least a heat buffer block of a different layer. Because the heat buffer block is coupled to the blocks of the fuse layer, new fusing point and a new path for effectively dissipating the heat are provided and a longer and sinuous electric current path is obtained between the blocks through the heat buffer blocks. The heat buffer block and the blocks coupled to the heat buffer block can avoid large current flowing through the fuse structure and prevent overheating.

Abstract: A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and bottom insulating layers. The fuse layer is connected to the other metal layers through via plugs. The fuse layer includes separate blocks and at least a connecting block and is coupled to at least a heat buffer block of a different layer. Because the heat buffer block is coupled to the blocks of the fuse layer, new fusing point and a new path for effectively dissipating the heat are provided and a longer and sinuous electric current path is obtained between the blocks through the heat buffer blocks. The heat buffer block and the blocks coupled to the heat buffer block can avoid large current flowing through the fuse structure and prevent overheating.