Patents by Inventor Shi-Yul Kim
Shi-Yul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8354288Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.Type: GrantFiled: August 3, 2012Date of Patent: January 15, 2013Assignee: Samsung Display Co., Ltd.Inventors: Bong-Kyun Kim, Jong-Hyun Choung, Byeong-Jin Lee, Sun-Young Hong, Hong-Sick Park, Shi-Yul Kim, Ki-Beom Lee, Sam-Young Cho, Sang-Woo Kim, Hyun-Cheol Shin, Won-Guk Seo
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Publication number: 20120295380Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.Type: ApplicationFiled: August 3, 2012Publication date: November 22, 2012Inventors: Bong-Kyun Kim, Jong-Hyun Choung, Byeong-Jin Lee, Sun-Young Hong, Hong-Sick Park, Shi-Yul Kim, Ki-Beom Lee, Sam-Young Cho, Sang-Woo Kim, Hyun-Cheol Shin, Won-Guk Seo
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Patent number: 8313988Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.Type: GrantFiled: December 27, 2006Date of Patent: November 20, 2012Assignee: Samsung Display Co., Ltd.Inventors: Sang-Woo Whangbo, Shi-Yul Kim, Sung-Hoon Yang, Woo-Geun Lee
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Patent number: 8305507Abstract: A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.Type: GrantFiled: February 17, 2006Date of Patent: November 6, 2012Assignee: Samsung Display Co., Ltd.Inventors: Hye-Young Ryu, Jang-Soo Kim, Sang-Gab Kim, Hong-Kee Chin, Min-Seok Oh, Hee-Hwan Choe, Shi-Yul Kim
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Patent number: 8284338Abstract: A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.Type: GrantFiled: September 22, 2011Date of Patent: October 9, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Chong-Chul Chai, Shi-Yul Kim, Sang-Gab Kim, Jun-Hyung Souk, Sang-Woo Whangbo, Won-Kie Chang, Hi-Kuk Lee, Soo-Wan Yoon, Soo-Jin Kim
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Patent number: 8262928Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.Type: GrantFiled: May 11, 2010Date of Patent: September 11, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Bong-Kyun Kim, Jong-Hyun Choung, Byeong-Jin Lee, Sun-Young Hong, Hong-Sick Park, Shi-Yul Kim, Ki-Beom Lee, Sam-Young Cho, Sang-Woo Kim, Hyun-Cheol Shin, Won-Guk Seo
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Publication number: 20120194414Abstract: A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.Type: ApplicationFiled: March 13, 2012Publication date: August 2, 2012Inventors: Woo-Geun LEE, Shi-Yul Kim, Jae-Hyoung Youn, Young-Wook Lee
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Patent number: 8218110Abstract: After increasing the thickness of a gate line and forming a barrier rib that is made of an organic material, a gate insulating layer is formed and then a color filter is formed with an Inkjet method using the barrier rib. By increasing a thickness of the gate line, even if the size of a substrate increases, problems due to signal delay are reduced, and by forming a barrier rib with an organic material, the height of the barrier rib increases, and a taper angle increases and thus a color filter is stably formed.Type: GrantFiled: May 4, 2009Date of Patent: July 10, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jean-Ho Song, Yang-Ho Jung, Hoon Kang, Jae-Sung Kim, Jae-Hyoung Youn, Jong-In Kim, Sang-Soo Kim, Shi-Yul Kim
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Patent number: 8173493Abstract: The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.Type: GrantFiled: April 22, 2010Date of Patent: May 8, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Gab Kim, Woo-Geun Lee, Shi-Yul Kim, Jin-Ho Ju, Jang-Soo Kim, Sang-Woo Whangbo, Min-Seok Oh, Hye-Young Ryu, Hong-Kee Chin
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Patent number: 8144280Abstract: A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.Type: GrantFiled: May 14, 2008Date of Patent: March 27, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-Geun Lee, Shi-Yul Kim, Jae-Hyoung Youn, Young-Wook Lee
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Publication number: 20120009842Abstract: A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.Type: ApplicationFiled: September 22, 2011Publication date: January 12, 2012Inventors: Chong-Chul Chai, Shi-Yul Kim, Sang-Gab Kim, Jun-Hyung Souk, Sang-Woo Whangbo, Won-Kie Chang, Hi-Kuk Lee, Soo-Wan Yoon, Soo-Jin Kim
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Patent number: 8058114Abstract: A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.Type: GrantFiled: June 9, 2010Date of Patent: November 15, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jang-Soo Kim, Hong-Long Ning, Bong-Kyun Kim, Hong-Sick Park, Shi-Yul Kim, Chang-Oh Jeong, Sang-Gab Kim, Jae-Hyoung Youn, Woo-Geun Lee, Yang-Ho Bae, Pil-Sang Yun, Jong-Hyun Choung, Sun-Young Hong, Ki-Won Kim, Byeong-Jin Lee, Young-Wook Lee, Jong-In Kim, Byeong-Beom Kim, Nam-Seok Suh
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Patent number: 8040444Abstract: A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.Type: GrantFiled: May 15, 2006Date of Patent: October 18, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Chong-Chul Chai, Shi-Yul Kim, Sang-Gab Kim, Jun-Hyung Souk, Sang-Woo Whangbo, Won-Kie Chang, Hi-Kuk Lee, Soo-Wan Yoon, Soo-Jin Kim
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Patent number: 8017949Abstract: Provided are a thin-film transistor (TFT) substrate which can facilitate the formation of contact holes and has improved reliability and a method of fabricating the TFT substrate. The TFT substrate includes a gate wiring formed on an insulating substrate; a data wiring defining a pixel region by intersecting the gate wiring, the data wiring including a source electrode and a drain electrode; a plurality of black matrix barrier ribs formed along the boundaries of the pixel region; a color filter formed to cover the pixel region; a pixel electrode formed on the color filter; and a plurality of contact holes formed through the color filter near the corners of the pixel region through which the pixel electrode and the drain electrode contact each other.Type: GrantFiled: May 19, 2009Date of Patent: September 13, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Guk Lee, Jang-Soo Kim, Hyang-Shik Kong, Sang-Soo Kim, Shi-Yul Kim, Yoon-Ho Kang, Hoon Kang, Byung-Duk Yang, Kyoung-Tai Han, Dong-Yoon Kim
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Patent number: 8013945Abstract: A display substrate includes a gate line, a gate insulating layer, a data line, a thin-film transistor (TFT), a storage line, a passivation layer, a color filter layer, a pixel electrode, a first light-blocking layer and a second light-blocking layer. The storage line includes the same material as the gate line. The passivation layer covers the data line. The color filter layer is formed on the passivation layer. The pixel electrode is formed on the color filter layer in each pixel. The first light-blocking layer is formed between adjacent pixel electrodes, and includes the same material as the gate line. The second light-blocking layer is formed between the first light-blocking layer, and includes the same material as the data line. Therefore, an aperture ratio may be increased.Type: GrantFiled: December 27, 2007Date of Patent: September 6, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Kyoung-Ju Shin, Shi-Yul Kim, Hye-Young Ryu, Mee-Hye Jung, Jang-Soo Kim, Su-Hyoung Kang
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Publication number: 20110140111Abstract: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.Type: ApplicationFiled: August 20, 2010Publication date: June 16, 2011Applicant: Samsung Electronics Co., LtdInventors: Chang-Oh JEONG, Woo-Sung SOHN, Dong-Gyu KIM, Shi-Yul KIM, Ki-Yeup LEE, Jean-Ho SONG
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Publication number: 20110133193Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.Type: ApplicationFiled: July 27, 2010Publication date: June 9, 2011Inventors: Jean-Ho SONG, Shin-Il Choi, Sun-Young Hong, Shi-Yul Kim, Ki-Yeup Lee, Jae-Hyoung Youn, Sung-Ryul Kim, O-Sung Seo, Yang-Ho Bae, Jong-Hyun Choung, Dong-Ju Yang, Bong-Kyun Kim, Hwa-Yeul Oh, Pil-Soon Hong, Byeong-Beom Kim, Je-Hyeong Park, Yu-Gwang Jeong, Jong-In Kim, Nam-Seok Suh
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Patent number: 7955521Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.Type: GrantFiled: February 21, 2008Date of Patent: June 7, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Hong-sick Park, Shi-yul Kim, Jong-hyun Choung, Won-suk Shin
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Patent number: 7943519Abstract: An etchant, a method for fabricating a multi-layered interconnection line using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant for the multi-layered line comprised of molybdenum/copper/molybdenum nitride illustratively includes 10-20 wt % hydrogen peroxide, 1-5 wt % organic acid, a 0.1-1 wt % triazole-based compound, a 0.01-0.5 wt % fluoride compound, and deionized water as the remainder.Type: GrantFiled: June 22, 2006Date of Patent: May 17, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Hong-sick Park, Shi-yul Kim, Jong-hyun Choung, Won-suk Shin
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Patent number: 7935580Abstract: A display substrate includes a gate line, a storage capacitor, a source line, a switching element, a pixel electrode, and a color filter. The gate line is formed on a base substrate. The storage capacitor has a storage line substantially parallel to the gate line. The source line crosses the gate line to define a pixel area. The switching element is connected to the gate line and the source line. The pixel electrode contacts the switching element. The color filter pattern is formed between the base substrate and the pixel electrode such that the color filter pattern contracts the base substrate and the pixel electrode. Thus, the color filter pattern is formed on the display substrate using a three-mask process.Type: GrantFiled: September 28, 2007Date of Patent: May 3, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Min-Seok Oh, Shi-Yul Kim, Sang-Gab Kim, Joo-Han Kim, Hong-Kee Chin, Yu-Gwang Jeong, Seung-Ha Choi