Abstract: The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

Abstract: A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.

Abstract: A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is formed on the second metal layer. The first and second metal layers are dry-etched using etching gas and the photoresist pattern as an etching mask. An etching material is removed from the base substrate, to prevent corrosion of the dry-etched first metal layer. Therefore, the source metal pattern without corrosion may be formed through a dry-etching process so that a manufacturing cost is decreased.

Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

Abstract: A display substrate includes a gate line, a storage capacitor, a source line, a switching element, a pixel electrode, and a color filter. The gate line is formed on a base substrate. The storage capacitor has a storage line substantially parallel to the gate line. The source line crosses the gate line to define a pixel area. The switching element is connected to the gate line and the source line. The pixel electrode contacts the switching element. The color filter pattern is formed between the base substrate and the pixel electrode such that the color filter pattern contracts the base substrate and the pixel electrode. Thus, the color filter pattern is formed on the display substrate using a three-mask process.

Abstract: A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.

Abstract: A multi-tone optical mask includes a substrate, a light-blocking pattern, a first semi-transmitting pattern and a second semi-transmitting pattern. The light-blocking pattern is formed on the substrate. The first semi-transmitting pattern is formed on the substrate. The second semi-transmitting pattern partially overlaps the first semi-transmitting pattern. The multi-tone optical mask has at least five different light-transmittances corresponding to a plurality of areas divided on the substrate.

Abstract: A display apparatus includes a first substrate, a gate line formed on the first substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line formed on the semiconductor layer and including a source electrode, a drain electrode facing the source electrode, a first electrode electrically connected to the drain electrode, in a second substrate facing the first substrate, a second electrode formed on the second substrate, and a liquid crystal layer disposed between the first electrode and the second electrode. At least one of the first and second electrodes includes a plurality of line patterns to polarize incident light.

Abstract: A display substrate includes a TFT layer, a passivation layer, an organic layer, an inorganic insulating layer and a pixel electrode. The TFT layer includes gate and data lines, a thin film transistor and a storage electrode. The data line crosses the gate line, and is electrically insulated from the gate line by a gate insulating layer. The TFT is electrically connected to the gate and data lines. The passivation layer covers the TFT layer. The organic layer is on the passivation layer. The inorganic insulating layer of a low temperature deposition is on the organic layer, and the low temperature is about 100° C. to about 250° C. The pixel electrode is on the inorganic insulating layer to be electrically connected to the TFT through a contact hole that is formed through the inorganic insulating layer, the organic layer and the passivation layer. The inorganic insulating layer helps to block leakage of impurities from the organic layer to layers above the inorganic insulating layer.

Abstract: A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.

Abstract: A display substrate includes a base substrate, a first metal pattern, a gate insulating layer, a second metal pattern, a channel layer and a pixel electrode. The first metal pattern is formed on the base substrate, and includes a gate line and a gate electrode of a switching element. The gate insulating layer is formed on the base substrate including the first metal pattern. The second metal pattern is formed on the gate insulating layer, and includes a source electrode, a drain electrode and a source line. The channel layer is formed under the second metal pattern, and is patterned to have substantially the same side surface as a side surface of the second metal pattern. The pixel electrode is electrically connected to the drain electrode. Therefore, an afterimage on a display panel, thus improving display quality.

Abstract: Provided are an etchant used for a transparent conductive oxide layer and a method for fabricating a liquid crystal display (LCD) using the etchant. The etchant includes 2-5 wt % sulfuric acid, 0.02-10 wt % hydrogen sulfate of alkali metal, and deionized water as the remainder.

Abstract: A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is formed on the second metal layer. The first and second metal layers are dry-etched using etching gas and the photoresist pattern as an etching mask. An etching material is removed from the base substrate, to prevent corrosion of the dry-etched first metal layer. Therefore, the source metal pattern without corrosion may be formed through a dry-etching process so that a manufacturing cost is decreased.

Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

Abstract: A display substrate includes a thin film transistor layer, a color filter layer, a plurality of pixel electrodes, a first cover layer and an alignment layer. The thin film transistor layer includes a plurality of pixel regions. The color filter layer is formed on the thin film transistor layer. The pixel electrodes are formed on the color filter layer with at least one gap defined between adjacent pixel electrodes. The first cover layer is provided in the gap between adjacent pixel electrodes and covers a portion of the color filter layer exposed by the gap between the pixel electrodes. The alignment layer is formed on the pixel electrodes and the first cover layer.

Abstract: A conductive structure containing copper is capable of being etched to have a reliable profile where the copper layer is free of corrosion or oxidation includes a barrier layer formed on an insulating or semiconductor substrate followed by a copper layer, a blocking layer and a capping layer. The copper layer includes copper or copper alloy. The barrier layer includes molybdenum (Mo), molybdenum nitride (MoN) or molybdenum alloy which includes at least one of MoW, MoTi, MoNb or MoZr. The blocking layer includes copper nitride, copper oxide or copper oxinitride. The capping layer includes molybdenum, molybdenum nitride (MoN) or molybdenum alloy which includes at least one of MoW, MoTi, MoNb and MoZr.

Abstract: In one embodiment, a thin film transistor array display panel and method of manufacturing the same are provided. A method includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact layer on the gate line; forming a data layer on the ohmic contact layer; forming a photosensitive pattern on the data layer; etching the data layer to form a data line including a source electrode and a drain electrode that is opposite to the source electrode; reflowing the photosensitive pattern to cover side surfaces of the source electrode and the drain electrode; and etching the ohmic contact layer using the reflowed photosensitive pattern as a mask.

Abstract: A thin film transistor array panel includes a pixel electrode formed on a substrate, a gate line formed on the pixel electrode, a gate insulating film formed on the gate line, a semiconductor formed on the gate insulating film, a data line and a drain electrode formed on the gate insulating film, and a passivation layer formed on portions of the data line and the drain electrode. The gate line includes a first film formed on the same layer and with the same material as the pixel electrode and a second film formed on the first film.

Abstract: An organic composition having liquid-crystal alignment characteristics includes a photosensitve compound and a binder resin represented by Formula 1 below: wherein each R1 is independently hydrogen or a methyl group; R2 is an alkyl group of 4-16 carbon atons; R3 is an alkyl group of 1-7 carbon atoms, a cyclooxyalkyl group of 1-7 carbon atoms, a benzyl group, or a phenyl group; l, m, and n represent molar ratios of polymerization units and are respectively from about 0.01 to about 0.50, from about 0.10 to about 0.60, and from about 0.03 to about 0.50.

Abstract: A photoresist stripper composition, a method for forming wire structures thereby, and a method of fabricating a thin film transistor substrate using the composition. The photoresist stripper composition includes about 50 WT % to about 70 WT % of butyldiglycol, about 20 to about 40 WT % of an alkylpyrrolidone, about 1 WT % to about 10 WT % of an organic amine compound, about 1 to about 5 WT % of aminopropylmorpholine, and about 0.01 to about 0.5 WT % of a mercapto compound.