Abstract: An engine system includes a mass air flow sensor and a manifold absolute pressure sensor configured to provide a real-time MAP signal during an event. The mass air flow sensor is configured to generate a set of mass air flow readings based on an airflow through the mass air flow sensor during the event. The set of mass air flow readings have a maximum value and a minimum value. A controller is configured to execute a method for detecting reversion in the air flow. If the rate of change in the real-time MAP signal is less than the predetermined transient threshold value (T0), the method includes setting a delta factor (D) as the difference between the maximum value and the minimum value. Reversion is detected based at least partially on a magnitude of the delta factor (D).

Abstract: An engine assembly includes an intake manifold and a manifold absolute pressure sensor configured to generate a current measured manifold absolute pressure (MAPM) signal for the intake manifold. The assembly includes a throttle valve adjustable to control airflow to the intake manifold and a throttle position sensor configured to generate a current measured throttle position (TPM) signal. A controller is operatively connected to the throttle valve and the manifold absolute pressure sensor and has a processor and tangible, non-transitory memory on which is recorded instructions for executing a method for determining a predicted manifold absolute pressure (MAPP). Execution of the instructions by the processor causes the controller to determine the predicted manifold absolute pressure (MAPP) based at least partially on a predicted throttle flow (TFP) and the current measured manifold absolute pressure (MAPM) signal.

Abstract: A system determines a value, such as a thickness, surface roughness, material concentration, and/or critical dimension, of a layer on a wafer based on normalized signals and reflected total intensities. A light source directs a beam at a surface of the wafer. A sensor receives the reflected beam and provides at least a pair of polarization channels. The signals from the polarization channels are received by a controller, which normalizes a difference between a pair of the signals to generate the normalized result. The value of the wafer is determined through analyzing the signal with a modeling of the system.

Abstract: This semiconductor inspection and metrology system includes a knife-edge mirror configured to receive light reflected from a wafer. The knife-edge mirror is positioned at a focal point of the light reflected from the wafer such that the reflective film on the knife-edge mirror is configured to block at least some of the light reflected from the wafer. The portion of blocked light changes when the light reflected from the wafer is under-focused or over-focused. At least one sensor receives the light reflected from the wafer. Whether the light is under-focused or over-focused can be determined using a reading from the at least one sensor. A height of an illuminated region on the surface of the wafer can be determined using such a reading from the at least one sensor.

Abstract: A method to determine a rotational position of a phaser for variable phasing system including a low-resolution rotational position sensing system includes estimating a rotational position of the phaser based upon a time interval between occurrence of a measured position of the phaser and a present periodic timepoint, a commanded position of the phaser, said measured position of the phaser, and a time constant of the variable phasing system when the occurrence of the measured position of the phaser is subsequent to a preceding periodic timepoint occurring at a set time interval prior to the present periodic timepoint.

Abstract: Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.

Abstract: An optical metrology device simultaneously detects light with multiple angles of incidence (AOI) and/or multiple azimuth angles to determine at least one parameter of a sample. The metrology device focuses light on the sample using an optical system with a large numerical aperture, e.g., 0.2 to 0.9. Multiple channels having multiple AOIs and/or multiple azimuth angles are selected simultaneously by passing light reflected from the sample through a plurality of pupils in a pupil plate. Beamlets produced by the plurality of pupils are detected, e.g., with one or more spectrophotometers, to produce data for the multiple AOIs and/or multiple azimuth angles. The data for multiple AOI and/or multiple azimuth angles may then be processed to determine at least one parameter of the sample, such as profile parameters or overlay error.

Abstract: Provided is a method for controlling a fabrication cluster using an optical metrology system that includes an optical metrology tool, an optical metrology model, and a profile extraction algorithm. The method comprises: selecting a number of rays for the illumination beam, selecting beam propagation parameters, using a processor, determining beam propagation parameters from the light source of the to the sample structure, determining the beam propagation parameters from the sample structure to the detector, calculating intensity and polarization of each ray on the detector, generating a total intensity and polarization of the diffraction beam, calculating a metrology output signal from the total intensity and polarization, extracting the one or more profile parameters using the metrology output signal, transmitting at least one profile parameter to a fabrication cluster, and adjusting at least one process parameter or equipment setting of the fabrication cluster.

Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

Abstract: An optical metrology device simultaneously detects light with multiple angles of incidence (AOI) and/or multiple azimuth angles to determine at least one parameter of a sample. The metrology device focuses light on the sample using an optical system with a large numerical aperture, e.g., 0.2 to 0.9. Multiple channels having multiple AOIs and/or multiple azimuth angles are selected simultaneously by passing light reflected from the sample through a plurality of pupils in a pupil plate. Beamlets produced by the plurality of pupils are detected, e.g., with one or more spectrophotometers, to produce data for the multiple AOIs and/or multiple azimuth angles. The data for multiple AOI and/or multiple azimuth angles may then be processed to determine at least one parameter of the sample, such as profile parameters or overlay error.

Abstract: A multi-patterning method of manufacturing a patterned wafer provides test structures designed to enhance overlay error measurement sensitivity for monitoring and process control. One or more patterns are overlaid on a first pattern, each of a given pitch, with the elements interleaved. Test structure is formed with elements of the overlaid patterns spaced away from respective mid-positions more closely toward elements of the first pattern. In some embodiments, test structure elements of the second pattern are overlaid midway between mid-positions of elements of the first pattern and measured by scatterometry. In other embodiments, test structure elements of the second pattern are overlaid at a slightly different pitch than the elements of the first pattern and measured by reflectivity. Measurements are compared with library measurements to identify the error, which may be fed back to control the patterning process. The multi-patterning may be formed by LELE, LLE, LFLE, or other methods.

Abstract: Provided is a method for controlling a fabrication cluster comprising an optical metrology tool and an optical metrology model including a profile model of a sample structure, the optical metrology tool having an illumination beam, the illumination beam having a range of angles of incidence and azimuth angles. A library comprising Jones and/or Mueller matrices and/or components (JMMOC) and corresponding profile parameters is generated using ray tracing and a selected range of beam propagation parameters and can be used to train a machine learning system (MLS). A regenerated simulated diffraction signal is obtained with a regenerated JMMOC using the library or MLS, integrated for all the rays of the optical metrology model. One or more profile parameters are determined from the best match regenerated simulated diffraction signal. At least one process parameter of the fabrication cluster is adjusted based on the determined one or more profile parameters.

Abstract: Provided is a method of enhancing an optical metrology system comprising a metrology tool and an optical metrology model. The optical metrology model includes a model of the metrology tool and a profile model of the sample structure. A first library comprising Jones and/or Mueller matrices or components (JMMOC) is generated using ray tracing based on a representative ray. A difference library is generated comprising difference JMMOC for each ray of the set of rays, calculated using the difference from the representative JMMOC. During profile extraction, the JMMOC of the representative ray and each ray of the set of rays are regenerated using the first and difference libraries and a best match simulated diffraction signal is obtained using the regenerated JMMOC of the representative ray, regenerated JMMOC of the rays, and the optical metrology model to determine profile parameters of the sample structure.

Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

Abstract: Provided is a method for enhancing accuracy of an optical metrology system that includes a metrology tool, an optical metrology model, and a profile extraction algorithm. The optical metrology model includes a model of the metrology tool and a profile model of the sample structure, the profile model having profile parameters. A library comprising Jones and/or Mueller matrices and/or components (JMMOC) and corresponding profile parameters is generated using ray tracing and a selected range of beam propagation parameters. An original simulated diffraction signal is calculated using the optical metrology model. A regenerated simulated diffraction signal is obtained using the regenerated JMMOC, integrated for all the rays of the optical metrology model. If an error and precision criteria for the regenerated simulated diffraction signal compared to the original simulated diffraction signal are met, one or more profile parameters are determined from the best match regenerated simulated diffraction signal.

Abstract: Provided is a method for controlling a fabrication cluster comprising an optical metrology tool and an optical metrology model including a profile model of a sample structure, the optical metrology tool having an illumination beam, the illumination beam having a range of angles of incidence and azimuth angles. A library comprising Jones and/or Mueller matrices and/or components (JMMOC) and corresponding profile parameters is generated using ray tracing and a selected range of beam propagation parameters and can be used to train a machine learning system (MLS). A regenerated simulated diffraction signal is obtained with a regenerated JMMOC using the library or MLS, integrated for all the rays of the optical metrology model. One or more profile parameters are determined from the best match regenerated simulated diffraction signal. At least one process parameter of the fabrication cluster is adjusted based on the determined one or more profile parameters.

Abstract: Provided is a method of enhancing an optical metrology system comprising a metrology tool and an optical metrology model. The optical metrology model includes a model of the metrology tool and a profile model of the sample structure. A first library comprising Jones and/or Mueller matrices or components (JMMOC) is generated using ray tracing based on a representative ray. A difference library is generated comprising difference JMMOC for each ray of the set of rays, calculated using the difference from the representative JMMOC. During profile extraction, the JMMOC of the representative ray and each ray of the set of rays are regenerated using the first and difference libraries and a best match simulated diffraction signal is obtained using the regenerated JMMOC of the representative ray, regenerated JMMOC of the rays, and the optical metrology model to determine profile parameters of the sample structure.

Abstract: Provided is a method for enhancing accuracy of an optical metrology system that includes a metrology tool, an optical metrology model, and a profile extraction algorithm. The optical metrology model includes a model of the metrology tool and a profile model of the sample structure, the profile model having profile parameters. A library comprising Jones and/or Mueller matrices and/or components (JMMOC) and corresponding profile parameters is generated using ray tracing and a selected range of beam propagation parameters. An original simulated diffraction signal is calculated using the optical metrology model. A regenerated simulated diffraction signal is obtained using the regenerated JMMOC, integrated for all the rays of the optical metrology model. If an error and precision criteria for the regenerated simulated diffraction signal compared to the original simulated diffraction signal are met, one or more profile parameters are determined from the best match regenerated simulated diffraction signal.

Abstract: A multi-patterning method of manufacturing a patterned wafer provides test structures designed to enhance overlay error measurement sensitivity for monitoring and process control. One or more patterns are overlaid on a first pattern, each of a given pitch, with the elements interleaved. Test structure is formed with elements of the overlaid patterns spaced away from respective mid-positions more closely toward elements of the first pattern. In some embodiments, test structure elements of the second pattern are overlaid midway between mid-positions of elements of the first pattern and measured by scatterometry. In other embodiments, test structure elements of the second pattern are overlaid at a slightly different pitch than the elements of the first pattern and measured by reflectivity. Measurements are compared with library measurements to identify the error, which may be fed back to control the patterning process. The multi-patterning may be formed by LELE, LLE, LFLE, or other methods.

Abstract: Provided is a method for determining profile parameters of a sample structure on a workpiece using an optical metrology system optimized to achieve one or more accuracy targets, the optical metrology system including an optical metrology tool, an optical metrology tool model, a profile model of the sample structure, and a parameter extraction algorithm, the method comprising: setting one or more accuracy targets for profile parameter determination for the sample structure; selecting a number of rays and beam propagation parameters to be used to model the optical metrology tool, measuring a diffraction signal off the sample structure using the optical metrology tool, generating a metrology output signal, determining an adjusted metrology output signal using the metrology output signal and calibration data, concurrently optimizing the optical metrology tool model and the profile model using the adjusted metrology output signal and the parameter extraction algorithm.