Abstract: A method of forming a sensor component includes forming a first layer over a sensor pad of a sensor of a sensor array. The first layer includes a first inorganic material. The method further includes forming a second layer over the first layer. The second layer includes a polymeric material. The method also includes forming a third layer over the second layer, the third layer comprising a second inorganic material; patterning the third layer; and etching the second layer to define a well over the sensor pad of the sensor array.

Abstract: In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall.

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.

Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A conductive element protrudes from the upper surface of the floating gate conductor into an opening. A dielectric material defines a reaction region. The reaction region overlies and extends below an upper surface of the conductive element.

Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

Abstract: A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.

Abstract: An apparatus includes a device substrate including an array of sensors. Each sensor of the array of sensors can include a electrode structure disposed at a surface of the device substrate. The apparatus further includes a wall structure overlying the surface of the device substrate and defining an array of wells at least partially corresponding with the array of sensors. The well structure including an electrode layer and an insulative layer.

Abstract: In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.

Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

Abstract: In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

Abstract: A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.

Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

Abstract: The present disclosure provides techniques for authenticating a password. These techniques may enable a user terminal to retrieve a diagram using a computing device. The diagram is inputted by a user in a terminal and is displayed in form of a diagram in connection to a password. The computing device may then transfer operand points passed through by the diagram to a server terminal for password authentication, and then receive a result of the password authentication from the server terminal. These techniques improve password authentication security.

Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

Abstract: A system includes a sensor including a sensor pad and includes a well wall structure defining a well operatively connected to the sensor pad. The sensor pad is associated with a lower surface of the well. The well wall structure defines an upper surface and a wall surface extending between the upper surface and the lower surface. The upper surface is defined by an upper buffer material having an intrinsic buffer capacity of at least 2×1017 groups/m2. The wall surface is defined by a wall material having an intrinsic buffer capacity of not greater than 1.7×1017 groups/m2.

Abstract: A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.

Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

Abstract: A dual tip probe for scanning probe epitaxy and a method of forming the dual tip probe are disclosed. The dual tip probe includes first and second tips disposed on a cantilever arm. The first and second tips can be a reader tip and a synthesis tip, respectively. The first tip can remain in contact with a substrate during writing and provide in situ characterization of the substrate and or structures written, while the second tip can perform in non-contact mode to write and synthesis nanostructures. This feature can allow the dual tip probe to detect errors in a printed pattern using the first tip and correct the errors using the second tip.