Abstract: A cooling device cools an electronic component using a plasma actuator provided with a dielectric, a first electrode arranged on one surface of the dielectric to generate an induced flow, and a second electrode arranged on the other surface of the dielectric, in which the electronic component and a third electrode are arranged in a flow direction of the induced flow, and a voltage applied to the third electrode is a voltage that generates a potential difference, which is capable of attracting the induced flow, between the first electrode and the third electrode.

Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Abstract: The present disclosure includes a conversion circuit (10) having a switching element and converting DC voltage into AC voltage by switching operation of the switching element, an isolation transformer (3) for which an input side is connected to the conversion circuit (10), a rectifier circuit (4) connected to an outside of the isolation transformer (3), a resonance circuit connected to the output side of the isolation transformer (3), and a control circuit (100) for controlling the switching element, wherein the control circuit (100) turning on the switching element in a period when current flowing through resonance circuit flows from a low potential side terminal to a high potential side terminal of the switching element via the isolation transformer (3).

Abstract: A cooling apparatus including a heat sink to which a heat generating body is joined, a main flow generation device configured to generate a main flow for cooling the heat sink, and an induced flow generation device configured to electrically generate an induced flow. The induced flow generation device is provided to a support member facing the heat sink.

Abstract: A control method of controlling a resonance type power conversion device including a voltage resonance circuit is provided. The voltage resonance circuit comprising, a choke coil connected to input power supply, a first switching element connected to the choke coil, a capacitor connected in parallel to the first switching element, and a resonance circuit connected between a connection point and an output terminal, the connection point being a point at which the choke coil and the first switching element are connected. The control method comprising, detecting a polarity of current flowing through parallel circuit connected in parallel to the first switching element by using a sensor included in the voltage resonance circuit; and controlling an operating condition of the first switching element depending on a polarity of the current detected by the sensor.

Abstract: A method for controlling a power conversion device can prevent over temperature by suppressing a change in impedance of a capacitor included in a rectifier circuit. The power conversion device includes an AC wave generation circuit for generating an AC wave, and a rectifier circuit for rectifying the AC wave generated by the AC wave generation circuit with a configuration including a rectifier capacitor and a diode connected in parallel. The method for controlling the power conversion device regulates the AC wave input to the rectifier capacitor depending on a change in impedance of the rectifier capacitor so as to suppress the change in the impedance of the rectifier capacitor.

Abstract: A method for controlling a power conversion device for converting power from a power supply by controlling an input to a resonance circuit comprising a resonance coil and a resonance capacitor, with a switching element, the method comprising simultaneously changing a switching frequency and a time ratio of the switching element so that the switching element satisfies a condition of zero-voltage switching when an output power of the power conversion device is changed.

Abstract: A method for controlling a resonance type power converter including a first resonance circuit (L0, C0) and a shunt circuit (3), which converts and outputs the power of the DC power supply, shunting a current flowing into a first capacitor (CS) by controlling a second switching element (S2) during a predetermined period within turn-off period of a first switching element (S1), the first capacitor connected in parallel to the first switching element (S1), the second switching element (S2) included in the shunt circuit (3), and the first switching element (S1) operated in response to the resonance of the first resonance circuit (L0, C0).

Abstract: A method for controlling a power conversion device for converting power from a power supply by controlling an input to a resonance circuit comprising a resonance coil and a resonance capacitor, with a switching element, the method comprising simultaneously changing a switching frequency and a time ratio of the switching element so that the switching element satisfies a condition of zero-voltage switching when an output power of the power conversion device is changed.

Abstract: A method for controlling a power conversion device can prevent over temperature by suppressing a change in impedance of a capacitor included in a rectifier circuit. The power conversion device includes an AC wave generation circuit for generating an AC wave, and a rectifier circuit for rectifying the AC wave generated by the AC wave generation circuit with a configuration including a rectifier capacitor and a diode connected in parallel. The method for controlling the power conversion device regulates the AC wave input to the rectifier capacitor depending on a change in impedance of the rectifier capacitor so as to suppress the change in the impedance of the rectifier capacitor.

Abstract: The present disclosure includes by controlling at least either one of a switching frequency of a switching element (S) or a duty ratio indicating an ON period of the switching element, securing delay time from voltage at both ends of the switching element reaches zero voltage by resonance of the resonant circuit (L0, C0) in an OFF state of the switching element until the switching element is turned on, and turning on the switching element within the delay time.

Abstract: The present invention is related to a control method for controlling a power converter including a first power conversion circuit 11 and a second power conversion circuit 12 by using a control circuit 13. The first power conversion circuit 11 is connected to a solar cell module 1 and a capacitor 2, converts output power of the solar cell module 1, and outputs the converted power to the capacitor 2, the second power conversion circuit 12 is connected to the capacitor 2, and converts a voltage at a connection terminal connected to the capacitor 2. The control method comprises step of controlling operation of the second power conversion circuit 12 based on the output voltage of the solar cell module 1, to use output power of the second power conversion circuit 12 for charging the capacitor 2.

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

Abstract: The present disclosure includes a conversion circuit (10) having a switching element and converting DC voltage into AC voltage by switching operation of the switching element, an isolation transformer (3) for which an input side is connected to the conversion circuit (10), a rectifier circuit (4) connected to an outside of the isolation transformer (3), a resonance circuit connected to the output side of the isolation transformer (3), and a control circuit (100) for controlling the switching element, wherein the control circuit (100) turning on the switching element in a period when current flowing through resonance circuit flows from a low potential side terminal to a high potential side terminal of the switching element via the isolation transformer (3).

Abstract: The present invention is related to a control method for controlling a power converter including a first power conversion circuit 11 and a second power conversion circuit 12 by using a control circuit 13. The first power conversion circuit 11 is connected to a solar cell module 1 and a capacitor 2, converts output power of the solar cell module 1, and outputs the converted power to the capacitor 2, the second power conversion circuit 12 is connected to the capacitor 2, and converts a voltage at a connection terminal connected to the capacitor 2. The control method comprises step of controlling operation of the second power conversion circuit 12 based on the output voltage of the solar cell module 1, to use output power of the second power conversion circuit 12 for charging the capacitor 2.

Abstract: A cooling apparatus including a heat sink to which a heat generating body is joined, a main flow generation device configured to generate a main flow for cooling the heat sink, and an induced flow generation device configured to electrically generate an induced flow. The induced flow generation device is provided to a support member facing the heat sink.

Abstract: A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation ELUMO>EC or equation EHOMO<EV.

Abstract: A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation ELUMO>EC or equation EHOMO<EV.

Abstract: There are included: a metal member having a groove formed on a front side surface thereof; a thermally conductive member provided in an inside of the groove and having a thermal conductivity in an X-axial direction on the front side surface higher than a thermal conductivity in a Y-axial direction orthogonal to the X-axial direction on the front side surface; and a semiconductor element provided on the front side surface of the metal member, and at least a part of which is in contact with the thermally conductive member.

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.