Patents by Inventor Shigekazu Tomai

Shigekazu Tomai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxide semiconductor substrate and schottky barrier diode
    Patent number: 11769840
    Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: September 26, 2023
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Masatoshi Shibata, Emi Kawashima, Koki Yano, Hiromi Hayasaka
  • GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20220388908
    Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 8, 2022
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Masatoshi SHIBATA, Emi KAWASHIMA, Yuki TSURUMA, Shigekazu TOMAI
  • LAMINATE AND SEMICONDUCTOR DEVICE
    Publication number: 20220393073
    Abstract: A stacked body may include a support, a buffer layer, and an electrode layer, in this order, wherein the buffer layer may include one or more metals selected from the group consisting of Ga, Al, In, and Zn, and oxygen, the electrode layer comprises an oxide of magnesium and an oxide of zinc, and the electrode layer has a half width of a diffraction peak observed at 2?=34.8±0.5 deg in X-ray diffraction measurement of 0.43 deg or smaller.
    Type: Application
    Filed: November 2, 2020
    Publication date: December 8, 2022
    Applicants: IDEMITSU KOSAN CO.,LTD., NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, NIKKISO CO., LTD.
    Inventors: Shigekazu TOMAI, Yoshihiro UEOKA, Satoshi KATSUMATA, Maki KUSHIMOTO, Manato DEKI, Yoshio HONDA, Hiroshi AMANO
  • OXIDE SINTERED BODY
    Publication number: 20220356118
    Abstract: An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.
    Type: Application
    Filed: June 24, 2020
    Publication date: November 10, 2022
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Shigekazu TOMAI, Yoshihiro UEOKA, Satoshi KATSUMATA, Kenichi SASAKI
  • COMPOSITION AND COMPOSITE MOLDED ARTICLE CONTAINING SAME
    Publication number: 20220356358
    Abstract: A composition having a carbon material and a redox substance with a redox potential of ?0.2 (V vs. SHE) or higher and 1.5 (V vs. SHE) or lower. A composition having a carbon material that is a carbon fiber. A composition where the carbon fiber is in a form of a chopped strand, roving, textile, non-woven fabric, or unidirectional material.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 10, 2022
    Applicant: Idemitsu Kosan Co.,Ltd.
    Inventors: Hiroshi YASUDA, Shigekazu TOMAI
  • GARNET COMPOUND, SINTERED BODY AND SPUTTERING TARGET CONTAINING SAME
    Publication number: 20220340442
    Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).
    Type: Application
    Filed: July 8, 2022
    Publication date: October 27, 2022
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Shigekazu TOMAI, Masatoshi SHIBATA
  • Garnet compound, sintered body and sputtering target containing same
    Patent number: 11447398
    Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: September 20, 2022
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Shigekazu Tomai, Masatoshi Shibata
  • Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor
    Patent number: 11447421
    Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: September 20, 2022
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Masatoshi Shibata, Emi Kawashima, Yuki Tsuruma, Shigekazu Tomai
  • Sintered body
    Patent number: 11434172
    Abstract: A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: September 6, 2022
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Yoshihiro Ueoka, Satoshi Katsumata, Kenichi Sasaki, Masashi Oyama
  • SOLUTION COMPOSITION COMPRISING CONDUCTIVE POLYMER
    Publication number: 20220154013
    Abstract: A solution composition comprising a conductive polymer, a resin, and a solvent is described. The solution composition has an acid value of 0.0 to 14.5 mgKOH/g or a base value of 0.0 to 1.0 mgHCl/g. The solution composition may be applied to a surface such as a steel surface and dried to obtain a film. The obtained film may be used for rust inhibition.
    Type: Application
    Filed: March 12, 2020
    Publication date: May 19, 2022
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Shigekazu TOMAI, Yoshikatsu SEINO
  • Oxide sintered body and sputtering target
    Patent number: 11328911
    Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: May 10, 2022
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Shigekazu Tomai, Masatoshi Shibata, Motohiro Takeshima
  • OXIDE STACKED BODY AND METHOD FOR PRODUCING THE SAME
    Publication number: 20220037561
    Abstract: A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10?2 S/cm or more.
    Type: Application
    Filed: September 26, 2019
    Publication date: February 3, 2022
    Applicants: IDEMITSU KOSAN CO.,LTD., NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, NIKKISO CO., LTD.
    Inventors: Yoshihiro UEOKA, Shigekazu TOMAI, Satoshi KATSUMATA, Maki KUSHIMOTO, Manato DEKI, Yoshio HONDA, Hiroshi AMANO
  • SINTERED BODY
    Publication number: 20220002205
    Abstract: A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.
    Type: Application
    Filed: October 30, 2019
    Publication date: January 6, 2022
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Shigekazu TOMAI, Yoshihiro UEOKA, Satoshi KATSUMATA, Kenichi SASAKI, Masashi OYAMA
  • Laminated body
    Patent number: 11189737
    Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.
    Type: Grant
    Filed: December 26, 2016
    Date of Patent: November 30, 2021
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Yoshihiro Ueoka, Takashi Sekiya, Shigekazu Tomai, Emi Kawashima, Yuki Tsuruma, Motohiro Takeshima
  • OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM
    Publication number: 20210355033
    Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
    Type: Application
    Filed: June 25, 2021
    Publication date: November 18, 2021
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Futoshi UTSUNO, Shigekazu TOMAI, Masatoshi SHIBATA, Mami ITOSE
  • Oxide sintered body, sputtering target and oxide semiconductor film
    Patent number: 11078120
    Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: August 3, 2021
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Futoshi Utsuno, Shigekazu Tomai, Masatoshi Shibata, Mami Itose
  • COMPOSITION, AND REDOX MATERIAL USING THE SAME
    Publication number: 20210079160
    Abstract: A composition comprising a conductive polymer, and a compound having an OH group and further having a butoxy group.
    Type: Application
    Filed: January 22, 2019
    Publication date: March 18, 2021
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Naoko ARAI, Shigekazu TOMAI, Fumioki FUKATSU
  • OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM
    Publication number: 20200325072
    Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
    Type: Application
    Filed: April 26, 2017
    Publication date: October 15, 2020
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Futoshi UTSUNO, Shigekazu TOMAI, Masatoshi SHIBATA, Mami ITOSE
  • LAMINATED BODY
    Publication number: 20200266304
    Abstract: A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.
    Type: Application
    Filed: December 26, 2016
    Publication date: August 20, 2020
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Yoshihiro UEOKA, Takashi SEKIYA, Shigekazu TOMAI, Emi KAWASHIMA, Yuki TSURUMA, Motohiro TAKESHIMA
  • GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
    Publication number: 20200140337
    Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
    Type: Application
    Filed: March 29, 2018
    Publication date: May 7, 2020
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi INOUE, Masatoshi SHIBATA, Emi KAWASHIMA, Yuki TSURUMA, Shigekazu TOMAI