Abstract: A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.

Abstract: A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 ??(1) In/(In+Ga)=0.59 to 0.99 ??(2) Zn/(Ga+Zn)=0.29 to 0.99 ??(3).

Abstract: A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive tetravalent metal in an amount of exceeding 100 at. ppm and 1100 at. ppm or less relative to the total of Ga and indium, or Al and indium, the crystal structure of the sintered body substantially including a bixbyite structure of indium oxide.

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).

Abstract: A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 ?m or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

Abstract: A thin film transistor (1) includes a source electrode (50), a drain electrode (60), a gate electrode (20), a gate insulating film (30), and a channel layer (40) that is formed of an oxide semiconductor, the channel layer (40) having an average carrier concentration of 1×1016/cm3 to 5×1019/cm3, and including a high carrier concentration region (42) that is situated on the side of the gate insulating film (30) and has a carrier concentration higher than the average carrier concentration, and the channel layer (40) having a substantially homogenous composition.

Abstract: Provided are thin film transistor substrates, thin film transistor liquid crystal displays, thin film transistors, TFT substrates for liquid crystal displays, liquid crystal displays provided with TFT substrates and liquid crystals, pixel electrodes for driving a liquid crystals, and transparent electrodes, an processes for the preparation thereof.

Abstract: A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less.

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).

Abstract: A field effect transistor including a source electrode 107a, a drain electrode 107b, a gate electrode 103, an insulating film 105 and a semiconductor layer 109 containing a crystalline oxide, wherein the source electrode 107a and the drain electrode 107b are self-aligned with the gate electrode 103 with the insulating film 105 therebetween.

Abstract: A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.

Abstract: A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 ?m3 or more in an amount of 0.03 vol % or less.

Abstract: A thin film transistor including a gats electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.

Abstract: A transparent conductive film for constructing a transparent electrode that is free from the generation of residue, etc. by etching with a weak acid (for example, organic acid). Further, there is provided a sputtering target for producing the transparent conductive film. In particular, there is provided a sputtering target composed of indium oxide and cerium oxide, characterized in that in the observation of crystal peaks by X-ray diffractometry, the presence of peaks ascribed to indium oxide and cerium oxide is observed, and that in the EPMA measurement, the diameter of cerium oxide particles dispersed in indium oxide is measured as being ?5 ?m. A transparent conductive film is formed by a sputtering technique with the use of this sputtering target. This transparent conductive film is substantially free from the generation of residue, etc. by etching with a weak acid (for example, organic acid).

Abstract: A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 ?m or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

Abstract: Provided are transparent electroconductive films and transparent electroconductive glass substrates, which contain a transparent electroconductive film and a metal thin film over the glass substrate.

Abstract: A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 ??(1) In/(In+Ga)=0.59 to 0.99 ??(2) Zn/(Ga+Zn)=0.29 to 0.99 ??(3).

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).

Abstract: An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight).

Abstract: A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.