Patents by Inventor Shigekazu Tomai

Shigekazu Tomai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130146452
    Abstract: A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 ??(1) In/(In+Ga)=0.59 to 0.99 ??(2) Zn/(Ga+Zn)=0.29 to 0.99 ??(3).
    Type: Application
    Filed: February 7, 2013
    Publication date: June 13, 2013
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki YANO, Hirokazu KAWASHIMA, Kazuyoshi INOUE, Shigekazu TOMAI, Masashi KASAMI
  • Patent number: 8461583
    Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: June 11, 2013
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami
  • Publication number: 20130140502
    Abstract: An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight).
    Type: Application
    Filed: June 1, 2011
    Publication date: June 6, 2013
    Inventors: Shigekazu Tomai, Kazuaki Ebata, Shigeo Matsuzaki, Koki Yano
  • Patent number: 8445903
    Abstract: A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: May 21, 2013
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Masashi Kasami, Hirokazu Kawashima, Futoshi Utsuno
  • Publication number: 20130082218
    Abstract: An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08.
    Type: Application
    Filed: May 24, 2011
    Publication date: April 4, 2013
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Koki Yano, Kazuyoshi Inoue
  • Patent number: 8384077
    Abstract: A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+Ga)=0.59 to 0.99??(2) Zn/(Ga+Zn)=0.29 to 0.99??(3).
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: February 26, 2013
    Assignee: Idemitsu Kosan Co., Ltd
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami
  • Publication number: 20120292617
    Abstract: An oxide sintered body including indium oxide of which the crystal structure substantially includes a bixbyite structure, wherein gallium atoms are solid-saluted in the indium oxide, and an atomic ratio Ga/(Ga+In) is 0.10 to 0.15.
    Type: Application
    Filed: January 14, 2011
    Publication date: November 22, 2012
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Koki Yano
  • Patent number: 8153033
    Abstract: An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.
    Type: Grant
    Filed: March 7, 2006
    Date of Patent: April 10, 2012
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Yukio Shimane, Kazuyoshi Inoue, Masato Matsubara, Nobuo Tanaka, Tokie Tanaka, legal representative, Shigekazu Tomai, Koki Yano, Shigeo Matsuzaki
  • Publication number: 20110310322
    Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
    Type: Application
    Filed: August 29, 2011
    Publication date: December 22, 2011
    Inventors: Kazuyoshi INOUE, Shigekazu Tomai, Masato Matsubara
  • Publication number: 20110311828
    Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
    Type: Application
    Filed: August 29, 2011
    Publication date: December 22, 2011
    Inventors: Kazuyoshi INOUE, Shigekazu TOMAI, Masato MATSUBARA
  • Patent number: 8038857
    Abstract: Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate. A thin film transistor substrate, comprising a transparent substrate, a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.
    Type: Grant
    Filed: March 2, 2005
    Date of Patent: October 18, 2011
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Shigekazu Tomai, Masato Matsubara
  • Publication number: 20110243835
    Abstract: A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.
    Type: Application
    Filed: June 1, 2009
    Publication date: October 6, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Futoshi Utsuno, Hirokazu Kawashima, Koki Yano, Shigekazu Tomai, Masashi Kasami, Kota Terai
  • Publication number: 20110198586
    Abstract: A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.
    Type: Application
    Filed: October 19, 2009
    Publication date: August 18, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Masashi Kasami, Hirokazu Kawashima, Futoshi Utsuno
  • Publication number: 20110049511
    Abstract: A field effect transistor including a source electrode 107a, a drain electrode 107b, a gate electrode 103, an insulating film 105 and a semiconductor layer 109 containing a crystalline oxide, wherein the source electrode 107a and the drain electrode 107b are self-aligned with the gate electrode 103 with the insulating film 105 therebetween.
    Type: Application
    Filed: January 16, 2009
    Publication date: March 3, 2011
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Shigekazu Tomai
  • Publication number: 20110006297
    Abstract: A patterned crystalline semiconductor thin film which is obtained by a method including: forming an amorphous thin film comprising indium oxide as a main component, crystallizing part of the amorphous thin film to allow the part to be semiconductive, and removing an amorphous part of the partially crystallized thin film by etching.
    Type: Application
    Filed: November 14, 2008
    Publication date: January 13, 2011
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Futoshi Utsuno, Masashi Kasami, Shigekazu Tomai, Hirokazu Kawashima
  • Publication number: 20100295042
    Abstract: A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.
    Type: Application
    Filed: January 22, 2009
    Publication date: November 25, 2010
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Hirokazu Kawashima, Shigekazu Tomai
  • Publication number: 20100276688
    Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).
    Type: Application
    Filed: December 19, 2008
    Publication date: November 4, 2010
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami
  • Publication number: 20100065835
    Abstract: To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.
    Type: Application
    Filed: September 18, 2008
    Publication date: March 18, 2010
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Futoshi Utsuno, Masashi Kasami, Kenji Goto, Hirokazu Kawashima
  • Patent number: 7648657
    Abstract: A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: January 19, 2010
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Nobuo Tanaka, Tokie Tanaka, legal representative, Shigekazu Tomai, Masato Matsubara, Akira Kaijo, Koki Yano
  • Patent number: 7612850
    Abstract: Provided are a semi-transmitting and semi-reflecting electrode substrate provided with a transparent conductive layer which is almost free from the generation of residues caused by etching and is resistant to an etchant for a metal reflecting layer (metal layer), a method of producing the semi-transmitting and semi-reflecting electrode substrate and a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: November 3, 2009
    Inventors: Kazuyoshi Inoue, Shigekazu Tomai, Masato Matsubara