Patents by Inventor Shigeki Doba
Shigeki Doba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11328904Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.Type: GrantFiled: June 18, 2020Date of Patent: May 10, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeki Doba, Hiroyuki Ogawa, Hajime Naito, Akitaka Shimizu, Tatsuo Matsudo
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Publication number: 20220108913Abstract: There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.Type: ApplicationFiled: October 7, 2021Publication date: April 7, 2022Inventors: Hajime NAITO, Hidenori MIYOSHI, Shigeki DOBA
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Publication number: 20200321195Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.Type: ApplicationFiled: June 18, 2020Publication date: October 8, 2020Inventors: Shigeki DOBA, Hiroyuki OGAWA, Hajime NAITO, Akitaka SHIMIZU, Tatsuo MATSUDO
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Patent number: 10734201Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.Type: GrantFiled: March 3, 2017Date of Patent: August 4, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeki Doba, Hiroyuki Ogawa, Hajime Naito, Akitaka Shimizu, Tatsuo Matsudo
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Patent number: 10090161Abstract: A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.Type: GrantFiled: January 12, 2017Date of Patent: October 2, 2018Assignee: Tokyo Electron LimitedInventors: Shigeki Doba, Satoshi Yamada
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Publication number: 20180151380Abstract: There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate. The heat shield plate is made of metal or silicon and is connected to the process container.Type: ApplicationFiled: November 27, 2017Publication date: May 31, 2018Inventors: Hiroyuki OGAWA, Akitaka SHIMIZU, Shigeki DOBA
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Publication number: 20170256382Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.Type: ApplicationFiled: March 3, 2017Publication date: September 7, 2017Inventors: Shigeki DOBA, Hiroyuki OGAWA, Hajime NAITO, Akitaka SHIMIZU, Tatsuo MATSUDO
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Publication number: 20170133234Abstract: A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.Type: ApplicationFiled: January 12, 2017Publication date: May 11, 2017Inventors: Shigeki DOBA, Satoshi YAMADA
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Publication number: 20140311676Abstract: A substrate mounting table (94) is equipped with a mounting table (2), an electrostatic chuck (6), and a bevel covering (5). The electrostatic chuck (6) has a supporting surface (6e) which is in contact with the whole of the rear surface of a wafer (W). The annular bevel covering (5) has an outer diameter (DA) which is greater than that of the supporting surface (6e), and an inner diameter (DI) which is smaller than that of the wafer (W). The bevel covering (5) is disposed such that, when viewed from the direction orthogonal to the supporting surface (6e), the bevel covering (5) surrounds the periphery of the wafer (W) supported on the supporting surface (6e).Type: ApplicationFiled: January 15, 2013Publication date: October 23, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Hideyuki Hatoh, Shigeki Doba, Shinya Yamamoto, Satoshi YAMADA, Hiroto Mori, Kenji Ando
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Publication number: 20140017900Abstract: A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.Type: ApplicationFiled: March 28, 2012Publication date: January 16, 2014Applicant: Tokyo Electron LimitedInventors: Shigeki Doba, Satoshi Yamada
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Publication number: 20090229759Abstract: An annular assembly for plasma processing which can prevent poor attraction of a substrate. The annular assembly is comprised of a focus ring that is mounted on a mounting stage and disposed such as to surround an outer periphery of a substrate subjected to the plasma processing, and an outer annular member that is disposed such as to surround an outer periphery of the focus ring. The outer annular member has an exposed surface that is exposed into a processing space in which plasma is produced, and the exposed surface is covered with yttria.Type: ApplicationFiled: March 6, 2009Publication date: September 17, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Masahiro OGASAWARA, Akihito Toda, Hiroshi Tsuchiya, Shigeki Doba
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Patent number: D491963Type: GrantFiled: May 20, 2003Date of Patent: June 22, 2004Assignee: Tokyo Electron LimitedInventor: Shigeki Doba
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Patent number: D494551Type: GrantFiled: June 12, 2003Date of Patent: August 17, 2004Assignee: Tokyo Electron LimitedInventor: Shigeki Doba