Patents by Inventor Shigenori Hayashi

Shigenori Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4943710
    Abstract: This invention relates to an image sensor and manufacturing method for the same.
    Type: Grant
    Filed: June 22, 1988
    Date of Patent: July 24, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mitsunori Sakama, Takeshi Fukada, Naoya Sakamoto, Nobumitsu Amachi, Shigenori Hayashi, Takashi Inushima
  • Patent number: 4910044
    Abstract: Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.
    Type: Grant
    Filed: September 1, 1988
    Date of Patent: March 20, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato, Takashi Inujima, Shigenori Hayashi
  • Patent number: 4887548
    Abstract: A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.
    Type: Grant
    Filed: May 13, 1988
    Date of Patent: December 19, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Urata, Naoki Hirose, Shigenori Hayashi
  • Patent number: 4803095
    Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.
    Type: Grant
    Filed: February 10, 1988
    Date of Patent: February 7, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shigenori Hayashi, Naoki Hirose, Takashi Inujima, Kenji Ito
  • Patent number: 4768464
    Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.
    Type: Grant
    Filed: September 16, 1987
    Date of Patent: September 6, 1988
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shigenori Hayashi, Naoki Hirose, Takashi Inujima, Kenji Ito