Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

Abstract: A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through said plasma region. Also claimed is an apparatus for fabricating a magnetic recording medium by sequentially and continuously forming a magnetic layer and a diamond-like carbon film on a polymer substrate material, which comprises at least a first vacuum vessel for forming the magnetic layer of the magnetic recording medium and a second vacuum vessel for forming the diamond-like carbon film, provided that the pressure difference between the operation pressures for the first vessel and the second vessel is set in the range of from 10?2 to 10?5 Torr.

Abstract: A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

Abstract: A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.

Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

Abstract: The present invention provides a method of depositing a metal film on a substrate in a non-oxidizing atmosphere and then forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere.

Abstract: An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

Abstract: An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

Abstract: In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

Abstract: In an apparatus for fabricating a carbon coating, an object such as a magnetic recording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.

Abstract: In an apparatus for fabricating a carbon coating, an object such as a magnetic r cording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.

Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

Abstract: A metal film is deposited on a silicon region in a non-oxidizing atmosphere, after which the metal film is oxidized with radicals capable of oxidizing the metal film, such as oxygen radicals, to form a metal oxide film serving as a gate insulating film.

Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.

Abstract: An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

Abstract: A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.

Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

Abstract: A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.