Abstract: The present invention is related to an organic composite. This organic composite comprises a substrate having an organic material surface and a film formed on the substrate by such plasma CVD method. Said organic material have an unsaturated bond of carbon. This organic composite gives an improved performance in an adhesion between the film and the substrate.

Abstract: An image-forming member for electrophotography and a manufacturing method for the same and an electrostatic photocopying machine are disclosed. The image-forming member comprises an organic photoconductive layer formed on a conductive substrate and a protective layer formed on the organic photoconductive layer. Hollows such as pinholes and cracks in the organic photoconductive layer are filled with insulating material, so that the organic photoconductive layer surface becomes even and thereby the protective layer such as a carbonaceous film having high hardness is formed on the organic photoconductive layer with a surface of the protective layer even such that foreign matters can not gather thereon.

Abstract: An image-forming member for electrophotography and a manufacturing method for the same and an electrostatic photocopying machine are disclosed. The image-forming member comprises an organic photoconductive layer formed on a conductive substrate and a protective layer formed on the organic photoconductive layer. Hollows such as pinholes and cracks in the organic photoconductive layer are filled with insulating material, so that the organic photoconductive layer surface becomes even and thereby the protective layer such as a carbonaceous film having high hardness is formed on the organic photoconductive layer with a surface of the protective layer even such that foreign matters can not gather thereon. Alternatively, hollows such as pinholes and cracks in a protective layer are filled with insulating material. Thereby the protective layer surface is made even.

Abstract: Diamond films are formed by chemical vapor reation. Nitrogen or halogen compound gas is inputted to the reaction chamber together with a reactive gas of hydrocarbon. The resistivity, transparency and hardness of the deposited films can be controlled by adjusting the introduction rate of the halogen or nitrogen.

Abstract: Diamond films or I-Carbon films can be formed on a surface of an object by virtue of plasma-assisted chemical vapor deposition. The hardness of the films can be enhanced by applying a bias voltage to the object during deposition.

Abstract: A plasma generating device and a method for etching a minute region of a substrate under atmospheric pressure are disclosed. A gas containing helium as the main ingredient is glow discharged under atmospheric pressure, a halide is added to the discharge so as to activate the halogen element, and a solid material (substrate) such as silicon is chemically etched by using the radicals. At that time, a magnetic field acts on the discharge so as to draw out electrons and ions to the surface of the substrate, thereby increasing the radical density in the vicinity of the surface of the substrate and the etching rate.

Abstract: A plasma generating device includes a central conductor, a peripheral cylindrical conductor surrounding the central conductor, an insulating cylinder interposed between the central conductor and the peripheral conductor in order to prevent direct arc discharge from occurring between the central conductor and the peripheral conductor. The central and peripheral conductors and the insulating cylinder are coaxially arranged in order to define a cylindrical discharging space therein. By applying a high frequency energy to the central conductor, glow discharge is caused between the central and peripheral conductors. A reactive gas is introduced from one end of the discharging space, excited by the glow discharge and goes out from the other end as an excited plasma to a working place where a work piece is processed by the plasma.

Abstract: Carbonaceous films are coated on a surface by chemical vapor reation. In advance of the deposition of carbonaceous film, a silicon nitride film as coated on the surface to prevent interdiffusion between the carbonaceous film and the underlying surface.

Abstract: A photo CVD apparatus includes a reaction chamber, a light source for radiating light to the inside of the chamber through a light window, and a pair of electrodes disposed in the chamber for glow discharge, one of the electrodes being located on the light window. After deposition by photo CVD, a light window for transmission of UV light is cleaned by plasma etching by virtue of glow discharge taking place between the electrodes. The light source and the electrodes for plasma etching share one power supply for supplying high frequency electric power.

Abstract: An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.

Abstract: A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.

Abstract: Diamond films or i-carbon films can be formed on a surface by virtue of cyclotron resonance chemical vapor deposition. The characteristics such as transmissivity, conductivity and hardness of the films can be easily controlled by introducing a halogen into the films.

Abstract: An electrophotographic member and method of using same where the electrophotographic member includes an organic photosensitive member and a passivation film formed on the organic photosensitive member where the film includes a first carbon containing layer including halogen atoms and being in direct contact with the organic photosensitive member and a second carbon containing layer including halogen atoms and formed on the first carbonaceous layer, wherein the concentration of halogen atoms in the first layer is lower than that in the second layer and the thickness of the first layer is substantially less than that of the second layer.

Abstract: An electrophotographic photoconductor comprises an electroconductive substrate, an organic photoconductive layer formed on the electroconductive substrate, and a protective layer formed on the organic photoconductive layer, comprising carbon or a carbon-based material as its main component, in which the difference in the Vickers hardness between the organic photoconductive layer and the protective layer is 2500 Kg/mm.sup.2 or less, and the oxygen concentration at the interface or in the vicinity of the interface between the organic photoconductive layer and the protective layer is 1 atom % or less.

Abstract: A method of manufacturing image sensors where (a) a first conductive film of a transparent material is formed over and in contact with a transparent substrate; (b) a photosensitive semiconductor film is formed over and in contact with the film; (c) the first conductive film and the semiconductor film are patterned by laser scribing; (d) a first insulating film is formed over the above films and in contact with the first conductive film and the semiconductor film and portions thereof are removed which are not necessary to define the image sensors in the patterned semiconductor film; (e) a second conductive film is formed over the semiconductor film and the remaining portions of the first insulating film in order to make contact with the semiconductor film; (f) the second conductive film is patterned; (g) a second insulating film is formed over and in contact with the second conductive film; (h) the second insulating film is patterned; and (i) an electrode arrangement is formed for withdrawing electrical signal

Abstract: Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.

Abstract: Disclosed is a method for producing image sensors having a plurality of sensing elements including the formation of parallel separating grooves by laser irradiation, the filling of the grooves with an insulating film, and the subsequent provision of a groove in the insulating film in a direction diagonal to the parallel grooves for metallization.

Abstract: A photochemical vapor reaction apparatus wherein a silicon film is deposited by photo-CVD. The photo-CVD is implemented by irradiating a reactive gas with ultraviolet rays which are emitted from a mercury lamp. The emission of the mercury lamp becomes continuous when the frequency of input power is 20 KHz or higher. By virtue of such a continuous light, the deposition is implemented uniformly and a close-packed and hard film can be formed.

Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light source for photo CVD or a pair of electrode for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light or plasma evenly throughout the surfaces to be coated.

Abstract: A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.