Abstract: An impurity having a conductivity type same as that contained in a source-and-drain region is implanted to an exposed surface of a gate electrode along a direction inclined to the surface of said semiconductor substrate, while using over-etched sidewalls as a mask, where the gate electrode is implanted both at the top surface and the upper portion of one side face thereof, whereas one of the source-and-drain regions is implanted with the impurity in an amount possibly attained by a single implantation, but the other portion is not implanted or only slightly implanted to a less affective degree.

Abstract: A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate via a gate insulating film. A source region and a drain region of a first conductivity type are formed on the first side and the second side of the gate electrode, respectively, in the semiconductor substrate. A punch-through stopper region of a second conductivity type is formed in the semiconductor substrate such that the second conductivity type punch-through stopper region is located between the source region and the drain region at distances from the source region and the drain region and extends in the direction perpendicular to the principal surface of the semiconductor substrate. The concentration of an impurity element of the second conductivity type in the punch-through stopper region is set to be at least five times the substrate impurity concentration between the source region and the drain region.

Abstract: A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate via a gate insulating film. A source region and a drain region of a first conductivity type are formed on the first side and the second side of the gate electrode, respectively, in the semiconductor substrate. A punch-through stopper region of a second conductivity type is formed in the semiconductor substrate such that the second conductivity type punch-through stopper region is located between the source region and the drain region at distances from the source region and the drain region and extends in the direction perpendicular to the principal surface of the semiconductor substrate. The concentration of an impurity element of the second conductivity type in the punch-through stopper region is set to be at least five times the substrate impurity concentration between the source region and the drain region.

Abstract: A semiconductor device includes: a semiconductor substrate having a p-MOS region; an element isolation region formed in a surface portion of the semiconductor substrate and defining p-MOS active regions in the p-MOS region; a p-MOS gate electrode structure formed above the semiconductor substrate, traversing the p-MOS active region and defining a p-MOS channel region under the p-MOS gate electrode structure; a compressive stress film selectively formed above the p-MOS active region and covering the p-MOS gate electrode structure; and a stress released region selectively formed above the element isolation region in the p-MOS region and releasing stress in the compressive stress film, wherein a compressive stress along the gate length direction and a tensile stress along the gate width direction are exerted on the p-MOS channel region. The performance of the semiconductor device can be improved by controlling the stress separately for the active region and element isolation region.

Abstract: A first well is formed in the surface layer of a semiconductor substrate, the first layer being of a first conductivity type, the first well being of a second conductivity type opposite to the first conductivity type. A pair of current input/output ports are connected to the first well, the pair of current input/output ports being used for flowing current through the first well along the direction parallel to a substrate surface. A second well of the first conductivity type is disposed between the pair of current input/output ports, the second well being shallower than the first well. A resistor element is provided which facilitates to have a desired resistance value.

Abstract: A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate via a gate insulating film. A source region and a drain region of a first conductivity type are formed on the first side and the second side of the gate electrode, respectively, in the semiconductor substrate. A punch-through stopper region of a second conductivity type is formed in the semiconductor substrate such that the second conductivity type punch-through stopper region is located between the source region and the drain region at distances from the source region and the drain region and extends in the direction perpendicular to the principal surface of the semiconductor substrate. The concentration of an impurity element of the second conductivity type in the punch-through stopper region is set to be at least five times the substrate impurity concentration between the source region and the drain region.

Abstract: An impurity having a conductivity type same as that contained in a source-and-drain region is implanted to an exposed surface of a gate electrode along a direction inclined to the surface of said semiconductor substrate, while using over-etched sidewalls as a mask, where the gate electrode is implanted both at the top surface and the upper portion of one side face thereof, whereas one of the source-and-drain regions is implanted with the impurity in an amount possibly attained by a single implantation, but the other portion is not implanted or only slightly implanted to a less affective degree.

Abstract: According to the invention, a magnetic recording medium is formed by using magnetic powder having a composition of the following formula:MeO.multidot.n[Fe.sub.2-x-y-z Ga.sub.x Cr.sub.y Al.sub.z O.sub.3 ]wherein Me is at least on element selected from the group consisting of Ba, Sr, Pb, and Ca,4.5.ltoreq.n.ltoreq.6, x.gtoreq.0, y.gtoreq.0, z.gtoreq.0,x/3+y/4+z/6.gtoreq.1/6, andx/6+y/10+z/11.ltoreq.1/6,preferably the number of those particles having a particle size of from 0.5d to 1.5d being at least 65% of the entire particles wherein is an average particle size, and the Fe content on the particle surface being substantially equal to the Fe content in the particle interior, and blending the powder with a binder. Thermomagnetic recording and thermomagnetic duplication are carried out using the medium. There results a magnetic layer which has high Hc, is not easily erased once recorded, has high squareness ratio, and enables thermomagnetic recording and thermomagnetic duplication at 100.degree. to 180.degree. C.

Abstract: An apparatus for preparing ice creams, wherein a freezing cylinder is constituted such that a liquid mix supplied from a mix tank is stirred in a stirring apparatus that is installed in the inside of the freezing cylinder, and refrigerated so as to complete ice creams, any amount of which can be dispensed through a dispensing port. For the cleaning and sterilization of the inside of the cylinder, the inside is heated by reversing the flow of heat media which are to be circulated through the refrigerating part of the cylinder to dissolve and automatically withdraw the ice creams in the cylinder, then cleaned several times by supplying and discharging hot water, to and from the inside, and after that sterilized by supplying hot water to the inside, and discharging the water from it.

Abstract: An apparatus for preparing ice creams, wherein a freezing cylinder is constituted such that a liquid mix supplied from a mix tank is stirred in a stirring apparatus that is installed in the inside of the freezing cylinder, and refrigerated so as to complete ice creams, any amount of which can be dispensed through a dispensing port. For the cleaning and sterilization of the inside of the cylinder, the inside is heated by reversing the flow of heat media which are to be circulated through the refrigerating part of the cylinder to dissolve and automatically withdraw the ice creams in the cylinder, then cleaned several times by supplying and discharging hot water, to and from the inside, and after that sterilized by supplying hot water to the inside, and discharging the water from it.

Abstract: An apparatus for preparing frozen products having a mix tank, a freezing chamber, a liquid mix supply means, a dispensing device, a freezing means for the freezing chamber comprising independent first and second freezing systems, and a frozen control means comprising a first and second frozen control means for said first and second freezing systems respectively, and making it possible that liquid mix in the freezing chamber may be always frozen in good condition. Further an apparatus for preparing frozen products having a frozen and chilled control means for the freezing means independently, and making it possible that liquid mix is stored in the freezing chamber when the freezing operation does not occur.