Abstract: A communication device that performs multi-link and multi-user communication is provided. A communication device includes a communication unit capable of wirelessly communicating on a plurality of links, a communication processing unit that performs processing of simultaneously receiving data from a plurality of transmission-side communication devices, and a control unit that performs control to receive data using an optimum link from each of the plurality of transmission-side communication devices. The control unit transmits a trigger request signal for requesting information regarding a transmission opportunity from the plurality of transmission-side communication devices on a link on which a reception opportunity has been acquired, and determines an optimum link for each transmission-side communication device on the basis of a request response signal from the plurality of transmission-side communication devices.

Abstract: A communication control device that causes a second communication device to generate a switching response frame indicating a response of connection switching that is to be transmitted to a communication terminal configured to switch a connection destination from a first communication device to the second communication device, on the basis of information regarding a connection between the first communication device and the communication terminal.

Abstract: A communication device that increases transmission efficiency by using a plurality of links is to be provided. A communication device that performs wireless communication using a plurality of links sends, during a period of transmission using a first link, a notification of information regarding a change in the transmission period in the first link, the change being caused by further transmission using a second link. The communication device sends, in the first link, a notification of information indicating whether or not acquisition of a transmission right is being attempted in the second link, and sends, in the second link, a notification of information indicating whether or not at least information regarding a transmission period written in a frame to be transmitted in the first link has been changed, and the information regarding the change in the transmission period in the first link.

Abstract: A communication device that performs multi-link and multi-user communication is provided. A communication device includes a communication unit capable of wirelessly communicating on a plurality of links, a communication processing unit that performs processing of simultaneously transmitting data to a plurality of reception-side communication devices, and a control unit that performs control to transmit data using an optimum link to each of the plurality of reception-side communication devices. The control unit performs control to transmit a trigger request signal for requesting information regarding a reception opportunity from the plurality of reception-side communication devices on a link on which a transmission opportunity has been acquired, and determine an optimum link for each reception-side communication device on the basis of a request response signal from the plurality of reception-side communication devices.

Abstract: An image sensor, includes: a first pixel and a second pixel, in a first direction, each including a first photoelectric conversion unit and a light-shielding unit and outputting a signal; a third pixel and a fourth pixel, in the first direction, each including a second photoelectric conversion unit and outputting a signal; a first signal line and a second signal line, in the first direction, each of which can be connected to the first pixel, the second pixel, the third pixel and the fourth pixel; and a control unit that performs a first control in which a signal of the first pixel is output to the first signal line and a signal of the second pixel is output to the second signal line, and a second control in which a signal of the third pixel and a signal of the fourth pixel are output to the first signal line.

Abstract: A semiconductor device includes: an IC; a first lead having an island portion to which the IC is bonded; a second lead having a band-shaped portion; a plurality of additional leads spaced apart from the second lead with the first lead therebetween, and electrically connected to the IC; and a plurality of wires bonded to the IC and the plurality of additional leads. As viewed in the thickness direction, each of the additional leads has an edge facing the island portion. As viewed in the thickness direction, the band-shaped portion has a pair of elongated edges. As viewed in the thickness direction, the edge of the additional lead located closest to the band-shaped portion is positioned between the pair of elongated edges in a predetermined direction perpendicular to the thickness direction.

Abstract: A highly corrosion-resistant austenite stainless steel that, even when exposed to temperatures in a range in which a ? phase is precipitated and corrosion resistance varies greatly, the stainless steel remains corrosion resistant, the steel consisting of, in mass %: C: 0.005 to 0.030%, Si: 0.05 to 0.30%, Mn: 0.05 to 0.40%, P: 0.005 to 0.050%, S: 0.0001 to 0.0010%, Ni: 22.0 to 32.0%, Cr: 19.0 to 28.0%, Mo: 5.0 to 7.0%, N: 0.18 to 0.25%, Al: 0.005 to 0.100%, Cu: 0.05 to 0.50%, W: not more than 0.05%, Sn: 0.0005 to 0.0150%, Co: 0.030 to 0.300%, B: 0.0005 to 0.0050%, Fe as a remainder and inevitable impurities, in which the stainless steel satisfies the following formula (1), an area ratio of ? phase is not more than 1%, and CPT based on ASTM G48 Method C as corrosion resistance property is not less than 60° C. 0.05?10[% B]+2[% P]+6[% Sn]+0.03[% Si]?0.

Abstract: The present disclosure provides a motor drive device. The motor drive device includes a terminal, a logic unit, a drive unit and a determination unit. The terminal is configured to receive a Hall signal output from a Hall sensor. The logic unit is configured to generate a control signal based on the Hall signal. The drive unit is configured to generate a driving signal based on the control signal. The determination unit is configured to determine a level of a voltage applied to the terminal. The logic unit is configured to switch a function setting based on a determination result of the determination unit.

Abstract: A highly corrosion-resistant Ni—Cr Mo—N alloy including in weight %, Ni: 22.0% or more, Cr: 22.0% or more, Mo: 5.0% or more, N: 0.180% or more, Si, Al, Mn, Fe as a remainder, and inevitable impurities, wherein the composition satisfies the following Formulas (1) to (3), and an area ratio of a sigma phase in a cross-sectional structure measured by EBSD after holding at 950° C. for 30 minutes is 1.0% or less Cr+3.3×Mo+16×N?43.0??(1) 7.3×Mo—Ni?21.0??(2-1) 1.3×?5.7??(2-2) 1.6×Si+0.99×Mn+2.2×Al?0.95??(3).

Abstract: A semiconductor device includes a first lead having a base extending in a first direction, and an IC on the base. The semiconductor device also includes a second lead, a third lead and fourth leads. The second lead includes a first belt-like section on one side of the base in the first direction, extending in a second direction, and paired second belt-like sections extending in the first direction from the first belt-like section. The third lead is on one side in the first direction. The fourth leads are on one side of the third lead in the first direction. First switching elements are bonded to the third lead. Second switching elements are respectively bonded to the fourth leads. The base overlaps with the first belt-like section 121 when viewed in the first direction. At least a part of the base is between the second belt-like sections.

Abstract: Alloy compositions, structures, and production methods for an appropriate slit cut surface shape improve productivity by increasing welding speed and stabilizing quality during high speed welding in Ti-containing Fe—Ni—Cr alloy production. The Ti-containing Fe—Ni—Cr alloy contains, hereinafter in weight %, C: 0.001 to 0.03%, Si: 0.05 to 1.25%, Mn: 0.10 to 2.00%, P: 0.001 to 0.030%, S: 0.0001 to 0.0030%, Ni: 15 to 50%, Cr: 17 to 25%, Al: 0.10 to 0.80%, Ti: 0.10 to 1.5%, N: 0.003 to 0.025%, 0: 0.0002 to 0.007%, Fe as a remainder, and inevitable impurities, and when the number and size of titanium nitrides contained in material are evaluated in a freely selected field of view of 5 mm2, the titanium nitrides having sizes of not more than 15 ?m are not less than 99.3% of total of the titanium nitrides.

Abstract: A semiconductor device includes a first lead having a base extending in a first direction, and an IC on the base. The semiconductor device also includes a second lead, a third lead and fourth leads. The second lead includes a first belt-like section on one side of the base in the first direction, extending in a second direction, and paired second belt-like sections extending in the first direction from the first belt-like section. The third lead is on one side in the first direction. The fourth leads are on one side of the third lead in the first direction. First switching elements are bonded to the third lead. Second switching elements are respectively bonded to the fourth leads. The base overlaps with the first belt-like section 121 when viewed in the first direction. At least a part of the base is between the second belt-like sections.

Abstract: Provided is an Fe—Ni—Cr alloy that has excellent surface characteristics and enables formation of a blackened coating having excellent blackening characteristics and peeling resistance. The Fe—Ni—Cr alloy has a chemical composition containing, by mass %, C, Si, Mn, P, S, Cr, Ni, Mo, Co, Cu, N, Ti, Al, O, and H, the balance being Fe and inevitable impurities, and satisfying formulae (1) to (4): (1) T1=11×[% N]+0.1; (2) T2=?39×[% N]?1.0; (3) A1=7.5×[% N]+0.1; (4) A2=?42.5×[% N]+1.0, where [% M] represents content (mass %) of element M in the alloy, and T1, T2, A1, and A2 satisfy relationships T1<[% Ti]<T2 and A1<[% A1]<A2.

Abstract: A power module includes a first die pad, a first switching element, a second die pad, a second switching element, an integrated circuit element, an encapsulation resin, and a lead frame assembly. The encapsulation resin encapsulates the first switching element, the second switching element, and the integrated circuit element. The lead frame assembly includes an outer lead and an inner lead. The lead frame assembly includes a first lead frame and a second lead frame. The first lead frame includes a first inner lead connected to the first die pad and a first outer lead connected to the first inner lead. The second lead frame includes a second inner lead connected to the second die pad and a second outer lead connected to the second inner lead.

Abstract: A power module includes a first die pad, a first switching element, a second die pad, a second switching element, an integrated circuit element, an encapsulation resin, and a lead frame assembly. The encapsulation resin encapsulates the first switching element, the second switching element, and the integrated circuit element. The lead frame assembly includes an outer lead and an inner lead. The lead frame assembly includes a first lead frame and a second lead frame. The first lead frame includes a first inner lead connected to the first die pad and a first outer lead connected to the first inner lead. The second lead frame includes a second inner lead connected to the second die pad and a second outer lead connected to the second inner lead.

Abstract: A power module includes a first die pad, a first switching element, a second die pad, a second switching element, an integrated circuit element, an encapsulation resin, and a lead frame assembly. The encapsulation resin encapsulates the first switching element, the second switching element, and the integrated circuit element. The lead frame assembly includes an outer lead and an inner lead. The lead frame assembly includes a first lead frame and a second lead frame. The first lead frame includes a first inner lead connected to the first die pad and a first outer lead connected to the first inner lead. The second lead frame includes a second inner lead connected to the second die pad and a second outer lead connected to the second inner lead.

Abstract: Provided is an Fe—Ni—Cr alloy that has excellent surface characteristics and enables formation of a blackened coating having excellent blackening characteristics and peeling resistance. The Fe—Ni—Cr alloy has a chemical composition containing, by mass %, C, Si, Mn, P, S, Cr, Ni, Mo, Co, Cu, N, Ti, Al, O, and H, the balance being Fe and inevitable impurities, and satisfying formulae (1) to (4): (1) T1=11×[% N]+0.1; (2) T2=?39×[% N]?1.0; (3) A1=7.5×[% N]+0.1; (4) A2=?42.5×[% N]+1.0, where [% M] represents content (mass %) of element M in the alloy, and T1, T2, A1, and A2 satisfy relationships T1<[% Ti]<T2 and A1<[% A1]<A2.

Abstract: A power module includes a first die pad, a first switching element, a second die pad, a second switching element, an integrated circuit element, an encapsulation resin, and a lead frame assembly. The encapsulation resin encapsulates the first switching element, the second switching element, and the integrated circuit element. The lead frame assembly includes an outer lead and an inner lead. The lead frame assembly includes a first lead frame and a second lead frame. The first lead frame includes a first inner lead connected to the first die pad and a first outer lead connected to the first inner lead. The second lead frame includes a second inner lead connected to the second die pad and a second outer lead connected to the second inner lead.