Abstract: An electromagnetic relay is provided which is small in size and is capable of controlling two circuits of an ordinarily-open contact, which has a large current-carrying capacity and high interrupting capability, and which is excellent in resistance against shock and vibration. Movable contactors are held, through bow-shaped movable contactor springs, to two -shaped holding frames each being electrically separated and being mechanically connected via a card made of a highly heat-resistant resin in a card block. Thick-plate shaped movable contacts, which are attached to the movable contactors in a fixed manner, are electrically connected or disconnected to fixed contacts in a base block, in synchronization with operations of an armature of an electro-magnet block. In order to improve a current-carrying capability and interrupting capability, there are provided two pieces of ordinarily-open contacts which are connected in series to each other, and between which an interval is doubled, in each of two circuits.

Abstract: A variable optical attenuator comprises an incoming fiber for propagating an incoming light beam, a mirror for reflecting the incoming light beam as a reflected light beam and an outgoing fiber for propagating as an outgoing light beam at least one part of the reflected light beam. The light intensity of the outgoing light beam is determined by the angle of reflection at the mirror. The angle of reflection at the mirror is adjusted by an actuator for rotating the mirror. The actuator comprises a plate, a coil, a housing and permanents magnets. The mirror and the coil are fixed on the plate. The housing supports the plate so that the plate is able to rotate around a rotation axis, which is included on a predetermined plane. The permanent magnets are fixed on the housing and generate predetermined magnetic flux density along the predetermined plane. When a driving current is supplied to the coil under the predetermined magnetic flux density, a Lorentz force occurs at the coil so as to rotate the coil.

Abstract: A processing apparatus includes a processing vessel, a gas introduction unit, a processing gas supply unit, a nonreactive gas supply unit, a vacuum pumping unit, a pressure gauge and a control unit. The control unit controls a valve opening ratio of a pressure control valve based on a detection value of the pressure gauge while making a processing gas flow to a flow rate controller of the processing gas supply unit at a constant flow rate when performing a process in which a partial pressure of the processing gas is important. Meanwhile, when performing a process wherein the partial pressure of the processing gas is relatively unimportant, the control unit fixes the valve opening ratio of the pressure control valve at a predetermined value, and operating a flow rate controller of the nonreactive gas supply unit to control a flow rate based on the detection value.

Abstract: A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality of microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.

Abstract: A treatment subject receiving vessel body 72 comprises a portable vessel main body 92, a treatment subject support member 100 installed in the vessel main body and capable of supporting a plurality of treatment subjects W, a joint port 96 formed in one side surface of the vessel main body and communicating with the interior of the vessel main body, an openable/closable gate valve 94 installed in the joining port, and an exhaust port 108 made openable/closable to be capable of exhausting the vessel main body. When the gate valve and exhaust port are closed, the vessel main body is brought to the sealed state.

Abstract: Plasma processing equipment capable of increasing the heat resistance of a wave guide by using a high dielectric material, comprising a processing container 44 formed to allow vacuuming, a loading table 46 installed in the processing container for placing a processed body W thereon, a microwave transmission plate 72 installed in an opening part at the ceiling of the processing container, a flat antenna member 76 for feeding microwave into the processing container through the microwave transmission plate, a shield cover body 80 earthed so as to cover the upper part of the flat antenna member, and a waveguide 90 for feeding the microwave from a microwave generating source to the flat antenna member, characterized in that the waveguide is formed of a high dielectric waveguide 94 using the high dielectric material, whereby the heat resistance of the waveguide can be increased.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A plasma processor with a microwave generating source mounted integrally on a shield lid by miniaturizing a matching circuit.

Abstract: A coaxial type impedance matching device includes a matching device body including an external conductor and an internal conductor arranged in the external conductor, an input side dielectric disposed in the matching device body and including a first dielectric and a second dielectric, and an output side dielectric disposed in the matching device body and including a third dielectric and a fourth dielectric. Distance between opposed surfaces of the first dielectric and the second dielectric is a predetermined distance, which is in a range of N?/4??/6 to N?/4??/6, where ? represents a guide wavelength of an input signal in the matching device body and N represents odd number. Distance between opposed surfaces of the third dielectric and the fourth dielectric is the predetermined distance.

Abstract: A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing.

Abstract: A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead.

Abstract: For plasma generation, an impedance matching device and a process of controlling and detecting the impedance matching device are provided to satisfy a preset matching condition. The impedance matching device includes a tubular external conductor and an internal conductor disposed therein, a matching device body including a plurality of dielectrics, a moving mechanism, a storing unit for storing a data table, a measuring device, and a calculation control unit. The impedance detecting process includes inputting a progressive wave and a reflected wave outputted by a directional coupler connected to an object to be matched, generating different signals, and mixing the signals to determine relative phase differences and amplitude ratios of the signals, and detecting an input impedance of the object to be matched on a basis of the detected amplitude ratios and that of a true phase difference between the progressive wave and the reflected wave that is detected by referring to a relationship prepared in advance.

Abstract: A substrate heating apparatus of the present invention, which heats a substrate mounted on a mount table 104 having heating means 108, in a processing vessel 102, includes a supporting part 202 made from a first material to support the mount table, a sealing part 204 made from a second material different from the first material in heat conductivity to seal the supporting part and the processing vessel and a joint part 206 for joining the supporting part and the sealing part in an airtight manner. With the constitution, by selecting the first material and the second material of different heat conductivities properly, it is possible to reduce a heat gradient between the top of the mount table and the bottom of the mount table. As a result, it is possible to shorten a supporting structure for the mount table, in length.

Abstract: A vacuum-processing method carries out, in a vacuum-processing vessel (4), a process wherein a condition of an interior of the vacuum processing vessel (4) changes as the number of processed objects (W) increases, such as a film-forming process for forming a thin film on a semiconductor wafer (W) by using a process gas in the vacuum processing vessel (4). The vacuum-processing method controls a controlled parameter directly affecting an effect of the process, such as film thickness, so that the controlled parameter is maintained at a target value (rt). The vacuum-processing method determines a model function obeying a change of the condition of the interior of the processing vessel (4), and calculates the target value (rt) of the controlled parameter every time one or a plurality of objects (W) are processed on the basis of a set value (Dt) of a set parameter representing the effect of the process, and the model function.

Abstract: A heat treatment system for controlling the temperature in a processing vessel. The system includes a cylindrical processing vessel; a supporting table, raised by a support from the bottom portion of the processing vessel, for mounting thereon an object to be processed; and a processing object heating part provided in the supporting table, for heating the object to be processed. In addition a thermoelectric conversion element capable of selectively heating or cooling is provided in the bottom portion of the processing vessel, a resistive heater is provided in the side wall of the processing vessel, and a temperature control part for controlling the operations of the thermoelectric conversion element and the resistive heater is provided. Thus, it is not only possible to appropriately control the temperature in the processing vessel, but it is also possible to reduce space and energy, by combining the resistive heater with a thermoelectric conversion element.

Abstract: A variable optical attenuator comprises an incoming fiber for propagating an incoming light beam, a mirror for reflecting the incoming light beam as a reflected light beam and an outgoing fiber for propagating as an outgoing light beam at least one part of the reflected light beam. The light intensity of the outgoing light beam is determined by the angle of reflection at the mirror. The angle of reflection at the mirror is adjusted by an actuator for rotating the mirror. The actuator comprises a plate, a coil, a housing and permanents magnets. The mirror and the coil are fixed on the plate. The housing supports the plate so that the plate is able to rotate around a rotation axis, which is included on a predetermined plane. The permanent magnets are fixed on the housing and generate predetermined magnetic flux density along the predetermined plane. When a driving current is supplied to the coil under the predetermined magnetic flux density, a Lorentz force occurs at the coil so as to rotate the coil.

Abstract: This invention relates to a thermal processing method including: a placing step of placing an object to be processed onto a stage arranged in a processing container that can be vacuumed; and a heating step of heating the object to be processed to a predetermined temperature. The object to be processed is heated under a state in which a temperature distribution is maintained in such a manner that a temperature at a central portion of the object to be processed is high while a temperature at a peripheral portion of the object to be processed is low, during at least a part of the heating step.

Abstract: A coaxial type impedance matching device includes a matching device body including an external conductor and an internal conductor arranged in the external conductor, an input side dielectric disposed in the matching device body and including a first dielectric and a second dielectric, and an output side dielectric disposed in the matching device body and including a third dielectric and a fourth dielectric. Distance between opposed surfaces of the first dielectric and the second dielectric is a predetermined distance, which is in a range of N&lgr;/4−&lgr;/6 to N&lgr;/4−&lgr;/6, where &lgr; represents a guide wavelength of an input signal in the matching device body and N represents odd number. Distance between opposed surfaces of the third dielectric and the fourth dielectric is the predetermined distance.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A CVD device (100) includes a 142 process chamber (102), in the wall of which first to fourth cartridge heaters (146, 148, 150, 152) are buried. The heaters have resistance whose value increases with temperature. A heater controller (160) determines the heater resistance from the current and voltage values associated with each heater. The heater controller (160) corrects a reference resistance corresponding to a set temperature by using a correction value corresponding to the temperature detected by a temperature sensor (250), and multiplies the corrected reference resistance by the temperature distribution constant of each heater to determine the target resistance. The heater controller (160) properly controls the phase of the AC power supplied to each heater so that the heater resistance may follow the target resistance. The first to fourth cartridge heaters (146, 148, 150, 152) are thus controlled accurately.