Abstract: A motor may include a rotor having a rotation shaft, a stator, a first radial bearing and a second radial bearing which rotatably support the rotation shaft. The motor may further include a second plate which is fixed to the end face of the stator and is formed with a second bearing insertion opening into which the second radial bearing is inserted. The second bearing insertion opening is formed with a bearing abutting part which abuts with an outer peripheral face of the second radial bearing to restrict movement in a radial direction of the second radial bearing, and a cut-out part which is radially recessed from an inner circumferential edge of the bearing abutting part for reducing an abutting area of the second radial bearing with the second bearing insertion opening.

Abstract: A microwave generation device includes: a magnetron having a cathode containing a filament and an anode containing a hollow resonator arranged to oppose to each other; a filament current measuring unit; and an application voltage measuring unit for measuring voltage applied to the filament. Based on the current and the voltage obtained by the current measuring unit and the voltage measuring unit, a resistance value calculation unit obtains a resistance value of the filament. A temperature calculation unit calculates the filament temperature from the resistance value and the resistance-temperature dependent characteristic. A filament power source is controlled by a power control unit so that the filament temperature is within a predetermined temperature range.

Abstract: This invention relates to a thermal processing method including: a placing step of placing an object to be processed onto a stage arranged in a processing container that can be vacuumed; and a heating step of heating the object to be processed to a predetermined temperature. The object to be processed is heated under a state in which a temperature distribution is maintained in such a manner that a temperature at a central portion of the object to be processed is high while a temperature at a peripheral portion of the object to be processed is low, during at least a part of the heating step.

Abstract: A plasma processing apparatus includes a chamber for containing a substrate to be processed, a gas supply unit for supplying a processing gas into the chamber, and a microwave introducing unit for introducing plasma generating microwaves into the chamber. The microwave introducing unit includes a microwave oscillator for outputting a plurality if microwaves having specified outputs, and an antenna section having a plurality of antennas to which the microwaves outputted from the microwave oscillator are respectively transmitted.

Abstract: Plasma processing equipment capable of increasing the heat resistance of a wave guide by using a high dielectric material, comprising a processing container 44 formed to allow vacuuming, a loading table 46 installed in the processing container for placing a processed body W thereon, a microwave transmission plate 72 installed in an opening part at the ceiling of the processing container, a flat antenna member 76 for feeding microwave into the processing container through the microwave transmission plate, a shield cover body 80 earthed so as to cover the upper part of the flat antenna member, and a waveguide 90 for feeding the microwave from a microwave generating source to the flat antenna member, characterized in that the waveguide is formed of a high dielectric waveguide 94 using the high dielectric material, whereby the heat resistance of the waveguide can be increased.

Abstract: Processing equipment for an object to be processed is provided with a process container, the internal of which can be evacuated, a gas introducing means for introducing a prescribed gas into the process container, a supporting table provided in the process container, a ring-shaped supporting part provided on the supporting table for supporting the object to be processed, a plurality of thermoelectric conversion elements provided on an upper plane of the supporting table on an inner side of the supporting part, an element storing space evacuating means for evacuating inside the element storing space formed by a lower plane of the object to be treated, which is supported by the supporting part, an upper plane of the supporting table and the supporting part.

Abstract: A heating apparatus for heating a target object W is provided with a plurality of heating light sources, including LED elements for applying heating light having a wavelength within a range from 360 to 520 nm to the object. Thus, a temperature of only the shallow surface of the object, such as a semiconductor wafer, is increased/reduced at a high speed in uniform temperature distribution, irrespective of the film type.

Abstract: A heat treatment apparatus for performing prescribed heat treatment to a subject (W) to be treated is provided with a processing chamber in which air can be exhausted; a mounting table arranged in the processing chamber, for placing on an upper plane the subject to be treated; a plurality of thermoelectric conversion elements arranged on an upper part of the mounting table; a light transmitting window for covering a ceiling portion of the processing chamber airtight; and a gas introduction unit for introducing a required gas into the processing chamber. A heating unit which includes a plurality of heating light sources including a semiconductor light emitting element for emitting heating light to the subject to be treated, is provided above the light transmitting window. Thus, heating efficiency is improved and temperature can be increased and reduced at a higher speed for the subject to be treated.

Abstract: A substrate heating apparatus of the present invention, which heats a substrate mounted on a mount table 104 having heating means 108, in a processing vessel 102, includes a supporting part 202 made from a first material to support the mount table, a sealing part 204 made from a second material different from the first material in heat conductivity to seal the supporting part and the processing vessel and a joint part 206 for joining the supporting part and the sealing part in an airtight manner. With the constitution, by selecting the first material and the second material of different heat conductivities properly, it is possible to reduce a heat gradient between the top of the mount table and the bottom of the mount table. As a result, it is possible to shorten a supporting structure for the mount table, in length.

Abstract: An electromagnetic relay is provided which is small in size and is capable of controlling two circuits of an ordinarily-open contact, which has a large current-carrying capacity and high interrupting capability, and which is excellent in resistance against shock and vibration. Movable contactors are held, through bow-shaped movable contactor springs, to two -shaped holding frames each being electrically separated and being mechanically connected via a card made of a highly heat-resistant resin in a card block. Thick-plate shaped movable contacts, which are attached to the movable contactors in a fixed manner, are electrically connected or disconnected to fixed contacts in a base block, in synchronization with operations of an armature of an electro-magnet block. In order to improve a current-carrying capability and interrupting capability, there are provided two pieces of ordinarily-open contacts which are connected in series to each other, and between which an interval is doubled, in each of two circuits.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead.

Abstract: A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided. In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage.

Abstract: A plasma processing apparatus includes an evacuatable processing vessel; a workpiece mount base for mounting thereon an object to be processed; a microwave transmitting plate provided in an opening of a ceiling of the processing vessel; a planar antenna member for supplying a microwave into the processing vessel via the microwave transmitting plate; a shield lid grounded to cover a top of the planar antenna member; a waveguide for guiding the microwave to the planar antenna member; a member elevating mechanism for relatively varying a vertical distance between the planar antenna member and the shield lid; a tuning rod insertable into the waveguide; a tuning rod driving mechanism for moving the tuning rod to adjust an insert amount thereof; and a matching control section for controlling an elevation amount of the planar antenna member and the insert amount of the tuning rod to obtain a matching adjustment.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A vacuum processing apparatus is constituted of the following portions: a processing container with the bottom, capable of drawing vacuum; a placement platform installed in the container; a heating portion for heating a substrate on the platform; a processing gas-feeding portion for feeding a processing gas into the container; a partitioning portion surrounding a space between the platform and the bottom of the container and partitioning off the space from a processing space in the container; a purge gas-feeding portion for feeding a purge gas into the space surrounded by the partitioning portion; a purge gas-discharging portion for discharging the purge gas from the space surrounded by the partitioning portion; a control portion for controlling the purge gas-feeding portion and/or the purge gas-discharging portion so as to regulate the pressure in the space surrounded by the partitioning portion; and a temperature-detecting portion penetrating the bottom of the container, inserted in the space surrounded by

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: A compact plasma generating apparatus providing high efficiency of plasma excitation is presented. A plasma generating apparatus (100) comprises a microwave generating apparatus (10) for generating microwaves, a coaxial waveguide (20) having a coaxial structure comprising an inner tube (20a) and an outer tube (20b), a monopole antenna (21) being attached to one end of said inner tube (20a), for directing the microwaves generated by said microwave generating apparatus (10) to the monopole antenna (21), a resonator (22) composed of dielectric material for holding the monopole antenna (21), and a chamber (23) in which a specific process gas is fed for plasma excitation. The chamber (23) has an open surface and the resonator (22) is placed on this open surface, and the process gas is excited by the microwaves radiated from the monopole antenna (21) through the resonator (22) into the interior of the chamber (23) to generate plasma.

Abstract: A processing gas supply mechanism installed on a processing chamber of a film forming apparatus for supplying a processing gas containing a metal organic compound onto a substrate to be processed includes a processing gas inlet opening for introducing the processing gas, a diffusion space for diffusing the processing gas introduced from the processing gas inlet opening, a processing gas supply mechanism main body for forming the processing gas diffusion space, and one or more processing gas supply holes for supplying the processing gas from the diffusion space to a processing space on the substrate in the processing chamber. Further, the processing gas supply holes are shaped to have a Peclet number of 0.5 to 2.5 when the processing gas passes therethrough.

Abstract: A vacuum-processing method carries out, in a vacuum-processing vessel (4), a process wherein a condition of an interior of the vacuum processing vessel (4) changes as the number of processed objects (W) increases, such as a film-forming process for forming a thin film on a semiconductor wafer (W) by using a process gas in the vacuum processing vessel (4). The vacuum-processing method controls a controlled parameter directly affecting an effect of the process, such as film thickness, so that the controlled parameter is maintained at a target value (rt). The vacuum-processing method determines a model function obeying a change of the condition of the interior of the processing vessel (4), and calculates the target value (rt) of the controlled parameter every time one or a plurality of objects (W) are processed on the basis of a set value (Dt) of a set parameter representing the effect of the process, and the model function.