Abstract: Disclosed is a developing solution for a photosensitive polyimide, which consists of an aqueous solution of an amine compound having a base dissociation index pKb [=−log (Kb)=−log (Kw/Ka)=14−pKa, where Kb is a base dissociation constant, Ka is acid dissociation constant of a proton complex, pKa is an acid dissociation index of a proton complex=−log (Ka), and Kw is an ion product of water=1×10−14] of 5 to 8 within an aqueous solution of 25° C.

Abstract: Disclosed is a developing solution for a photosensitive polyimide, which consists of an aqueous solution of an amine compound having a base dissociation index pKb [=−log (Kb)=−log (Kw/Ka)=14−pKa, where Kb is a base dissociation constant, Ka is acid dissociation constant of a proton complex, pKa is an acid dissociation index of a proton complex=−log (Ka), and Kw is an ion product of water=1×10−14] of 5 to 8 within an aqueous solution of 25° C.

Abstract: A polyimide precursor composition, which comprises, a polyamic acid having a repeating unit represented by the following general formula (PA), and at least one kinds of cure accelerator selected from the group consisting of a substituted or unsubstituted nitrogen-containing heterocyclic compound exhibiting an acid dissociation index "pKa" of a proton complex ranging from 0 to 8 in an aqueous solution thereof, or an N-oxide compound of said nitrogen-containing heterocyclic compound (AC1), a substituted or unsubstituted amino acid compound (AC2), and an aromatic hydrocarbon compound or an aromatic heterocyclic compound having a molecular weight of 1,000 or less and two or more hydroxyl groups (AC3): ##STR1## wherein .phi. is a quadrivalent organic group, .phi. is a bivalent organic group, R is a substituted or unsubstituted hydrocarbon group, organosilicic group or hydrogen atom.

Abstract: A polyimide precursor having a molecular structure obtained by polymerizing (a) 0.97 to 1.03 molar equivalent of a diamine component containing 0.40 molar equivalent or more of aromatic diamine compound represented by the general formula (DA1), and (b) an acid anhydride component containing (1-n.sub.1 /2) molar equivalent of a tetracarboxylic dianhydride and n.sub.1 molar equivalent of at least one selected from the group consisting of maleic anhydride and maleic derivative anhydride, wherein n.sub.1 ranges from 0.02 to 0.40.

Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.

Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.

Abstract: An optical disc having a transparent substrate, a resin layer comprised of a silicon resin and a curing catalyst, a projection/recess pattern formed on the transparent substrate, and a recording layer formed on the resin layer.

Abstract: An electrochromic display device includes a transparent first electrode and a second electrode opposing said first electrode to be spaced apart therefrom. An electrochromic layer is formed in a space formed between the first and second electrodes so as to be in contact with the first electrode. The electrochromic layer is formed of certain naphthalene derivatives, certain tetracene derivatives or certain fulvalene derivatives. An ionic conductor layer is formed in the space so as to be in contact with the electrochromic layer.

Abstract: .alpha.-Silicon nitride powder which is used as a raw material for the preparation of high strength silicon nitride with additives such as magnesia and yttrium oxide, and other sintered materials suitable for high temperatures gas turbine engine components and the like, is prepared by heating a powdered mixture of silica, carbon and at least one component selected from the group consisting of silicon nitride, silicon carbide and silicon oxynitride in a nitrogen containing atmosphere and then optionally subjecting the material to a heat treatment in an oxidizing atmosphere for decarbonization of said material as required.

Abstract: Disclosed is a solid state lithium cell comprising layers of a cathode-active material, a solid electrolyte, and an anode-active material consisting of lithium metal, which are arranged in this order, which is characterized in that said cathode-active material is a solid solution composed of lead iodide and at least one element selected from the group consisting of bismuth, antimony, thallium, indium and gallium and iodides thereof.