Abstract: A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.

Abstract: A valve timing control apparatus includes a locking mechanism that can minimize the accumulation of foreign material in a concave engagement part, can minimize the penetration of foreign material to the sliding parts of a locking member, and can reduce the sliding resistance of the locking member. A locking mechanism is provided with a sliding groove provided to an outer rotor; a locking member for sliding along the sliding groove; and a concave engagement part that is provided to the inner rotor, for engaging with the locking member in a state in which the phase of relative rotation is a lock phase, and has an inlet port for introducing hydraulic fluid. Flow channels for hydraulic fluid are provided to at least one of the sliding groove and the locking member, are formed along the sliding direction of the locking member, and are communicatingly connected to the concave engagement part.

Abstract: A valve timing control apparatus is provided having a locking mechanism that can minimize the accumulation of foreign material in a concave engagement part, can minimize the penetration of foreign material to the sliding parts of a locking member, and can reduce the sliding resistance of the locking member. A locking mechanism (5) is provided with a sliding groove (52) provided to an outer rotor (2); a locking member (53) capable of sliding along the sliding groove (52); and a concave engagement part (51) that is provided to the inner rotor (3), is formed to be capable of engaging with the locking member (53) in a state in which the phase of relative rotation is a lock phase, and has an inlet port (58) capable of introducing hydraulic fluid. Flow channels (57) for hydraulic fluid are provided to at least one of the sliding groove (52) and the locking member (53), are formed along the sliding direction of the locking member (53), and are communicatingly connected to the concave engagement part (51).

Abstract: An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a source gas containing a film source element and no amino group, a second process gas including an oxidizing gas, and a third process gas including a preliminary treatment gas. A first step includes an excitation period of supplying the third process gas excited by an exciting mechanism, thereby performing a preliminary treatment on the target substrate by preliminary treatment gas radicals. A second step performs supply of the first process gas, thereby adsorbing the film source element on the target substrate. A third step includes an excitation period of supplying the second process gas excited by an exciting mechanism, thereby oxidizing the film source element adsorbed on the target substrate by oxidizing gas radicals.

Abstract: A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

Abstract: An oxidation apparatus for a semiconductor process includes a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field of a process container through a gas supply port disposed adjacent to target substrates on one side of the process field. The gas supply port includes a plurality of gas spouting holes arrayed over a length corresponding to the process field in a vertical direction. A heater is disposed around the process container and configured to heat the process field. A control section is preset to perform control such that the oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field, and an oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

Abstract: An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.

Abstract: In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

Abstract: The purpose of the invention is to provide a material for weight reduction diet food and the processed food using the same, that is a natural food product obtained from the materials eaten in everyday life, and very safe to the human body. There is provided a material for processed food for weight reduction diets, wherein active ingredients including histidine were extracted from Bonito essence. In addition, the present invention provides the material for processed food for weight reduction diets, wherein 12,000 mg-20,000 mg weight % of histidine is included. Furthermore, the processed food for weight reduction diets using the above-mentioned material for processed food for weight reduction diets is offered. As examples of such processed food, besides supplements in tablets and capsules soup stock powder, Furikake, and feeds for animals.

Abstract: A variable valve timing control device includes a rotational shaft, a rotation transmitting member assembled around the rotational shaft, and a vane assembled to one of the rotational shaft and the rotation transmitting member. The variable valve timing control device also includes a fluid pressure chamber defined between the rotational shaft and the rotation transmitting member and divided into a retarded angle chamber and an advanced angle chamber by the vane, a fluid passage through which an operation fluid is selectively supplied to or discharged from the advanced angle chamber or the retarded angle chamber, and a torsion coil spring for constantly biasing the rotational shaft to an advanced angle direction relative to the rotation transmitting member. The torsion coil spring is disposed between the rotational shaft and the rotation transmitting member under a condition that the torsion spring is compressed to a predetermined length from a free length.

Abstract: The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.

Abstract: A variable valve timing control device includes a housing member, a rotor member assembled on the housing member so as to rotate relative thereto, a vane provided on the rotor member, a fluid pressure chamber divided into an advanced angle chamber and a retarded angle chamber by the vane, a lock mechanism for restricting or allowing a relative rotation between the housing member and the rotor member by a lock member, a fluid pressure circuit for controlling an operation fluid to be supplied to or discharged from the advanced angle chamber, the retarded angle chamber, and the lock mechanism, a plate provided on the housing member and integrally rotating with the housing member, an engaging groove formed on the plate, and a contacting member arranged in the engaging groove so as to rotate integrally with the plate and engaging with a coupling member so as to be assembled thereon.

Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Abstract: In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.

Abstract: A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.

Abstract: In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.

Abstract: A valve timing control device includes a rotor, a housing which can rotate relative to the rotor, a projecting portion which is formed on the housing so as to slide on the outer circumference of the rotor, a fluid chamber which is defined between the rotor and the housing, a vane which is provided on the rotor and which divides the fluid chamber into a retard angle chamber and an advance angle chamber and a torsion coil spring for urging the rotor relative to the housing in the advance angle direction in which the volume of the retard angle chamber decreases and the volume of the advance angle chamber increases and disposed in the twisted condition with a predetermined angle so as not to contact with the rotor and the housing frictionally.

Abstract: A valve opening-closing timing control device includes a housing member rotating together with one of a cam shaft and a crank shaft of a combustion engine, a rotor member rotatably attached to said housing member; and rotating together with the other of said crank shaft and said cam shaft, a hydraulic pressure chamber formed between said housing member and said rotor member, the hydraulic pressure chamber being divided into an advance angle hydraulic chamber and a retard angle hydraulic chamber by a vane integrally provided with said rotor member, a lock mechanism including a lock member movably provided at the housing member and a receiving portion formed at said rotor member for receiving the lock member, whereby the lock mechanism restricts a relative rotation between the rotor member and the housing member by advancing the lock member into the receiving portion and allows the relative rotation between the rotor member and the housing member by retracting the lock member from the receiving portion, a hydra

Abstract: A valve timing control device comprises a drive side rotation member for rotating with a crank shaft with synchronization, a driven side rotation member arranged coaxially with the drive side rotation member and slidable therewith, the driven side rotation member rotating with the camshaft, and a rotation phase position adjustment mechanism for adjusting a relative rotation phase between the drive side rotation member and the driven side rotation member by an operating oil. The drive side rotation member and the driven side rotation member form a vertical sliding surface relative to a rotation axis, and an oil reservoir is formed at the driven side rotation member. The oil reservoir is open to the sliding surface and is connected to a drain for the operating oil.

Abstract: The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.