Abstract: An interface device and a signal transceiving method thereof are provided. The interface device includes a slave circuit and a master circuit. The slave circuit is coupled to the master circuit and includes a first programmable delay line, a first output clock generator, and a first phase detector. The first programmable delay line provides a first adjusting delay amount according to a first adjust signal, and generates a first delayed clock signal by delaying a first clock signal according to the first adjusting delay amount. The first output clock generator generates a second clock signal according to the first delayed clock signal. The first phase detector detects a phase difference of the first clock signal and the second clock signal to generate first phase lead or lag information. The first adjust signal is generated according to the first phase lead or lag information.

Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor.

Abstract: In an embodiment, a method includes performing a first plasma deposition to form a buffer layer over a first side of a first integrated circuit device, the first integrated circuit device comprising a first substrate and a first interconnect structure; performing a second plasma deposition to form a first bonding layer over the buffer layer, wherein a plasma power applied during the second plasma deposition is greater than a plasma power applied during the first plasma deposition; planarizing the first bonding layer; forming a second bonding layer over a second substrate; pressing the second bonding layer onto the first bonding layer; and removing the first substrate.

Abstract: A semiconductor chip includes a physical layer and a processing circuit. The physical layer includes at least one sequence checking circuit and at least one signal transmission path, wherein the at least one sequence checking circuit is configured to generate at least one test result signal according to a clock signal and at least one test data signal transmitted through the at least one signal transmission path, and the clock signal is not transmitted through the at least one signal transmission path. The processing circuit is electrically coupled to the physical layer and is configured to determine an operation status of the at least one signal transmission path according to the voltage level of the at least one test result signal.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.

Abstract: A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.

Abstract: A reconfigurable intelligent surface includes a radiant layer, a sensing feeding circuit layer, a processing layer and a controlling circuit layer. The radiant layer includes at least two antennas and a plurality of reflecting units. Each of the at least two antennas is configured for sensing a polarization, a frequency or a direction angle of an incident electromagnetic wave. The reflecting units are arranged to form a reflecting surface. The sensing feeding circuit layer is signally connected to the antennas. The processing layer is signally connected to the sensing feeding circuit layer, and the processing layer is configured to produce a controlling signal corresponding thereto. The controlling circuit layer is signally connected to the radiant layer and the processing layer, wherein the controlling circuit layer receives the controlling signal and controls the reflecting units according to the controlling signal to adjust and form a reflecting electromagnetic wave.

Abstract: An electronic device, and a method for performing fingerprint sensing control on a display panel are provided. A sensing region of the display panel is divided into a plurality of fingerprint zones. The electronic device determines at least one target fingerprint zone from the fingerprint zones according to a touch location, wherein the fingerprint zones are coupled to a plurality of scanning groups, each of the scanning groups comprises one or more scanning lines, the at least one target fingerprint zone is coupled to a first scanning group and a second scanning group other than the first scanning group among the plurality of scanning groups. The electronic device scans the first scanning group with a first speed, and scans the second scanning group with a second speed higher than the first speed or skips scanning the second scanning group.

Abstract: A method includes forming a transistor over a front side of a substrate, in which the transistor comprises a channel region, a gate region over the channel region, and source/drain regions on opposite sides of the gate region; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure includes a dielectric layer and conductive features; and bonding the front-side interconnect structure to a carrier substrate via a bonding layer, in which the bonding layer is between the front-side interconnect structure and the carrier substrate, and the bonding layer has a higher thermal conductivity than the dielectric layer of the front-side interconnect structure.

Abstract: An interface device and a signal transceiving method thereof are provided. The interface device includes a master circuit and a slave circuit. The slave circuit includes a second receiver, a clock generator, a sampler, and a comparator. The first receiver and second receiver respectively receive input data and a clock signal from the master circuit. The clock generator delays the clock signal according to a delay value to generate a delayed clock signal, and generates a plurality of sampling signals according to the delayed clock signal. The sampler samples the input data according to the sampling signals to generate a plurality of sampling results. The comparator compares the sampling results to generate a comparison result. The clock generator adjusts the delay value according to the comparison result.

Abstract: A semiconductor device according to the present disclosure includes a stack of first channel members, a stack of second channel members disposed directly over the stack of first channel members, a bottom source/drain feature in contact with the stack of the first channel members, a separation layer disposed over the bottom source/drain feature, a top source/drain feature in contact with the stack of second channel members and disposed over the separation layer, and a frontside contact that extends through the top source/drain feature and the separation layer to be electrically coupled to the bottom source/drain feature.

Abstract: An integrated circuit includes a nanostructure transistor including a plurality of first semiconductor nanostructures over a substrate and a source/drain region in contact with each of the semiconductor nanostructures. The integrated circuit includes a fin sidewall spacer laterally bounding a lower portion of the source/drain region. The integrated circuit also includes a bottom isolation structure electrically isolating the source/drain region from the semiconductor substrate.

Abstract: In an embodiment, a device includes: first nanostructures; a first undoped semiconductor layer contacting a first dummy region of the first nanostructures; a first spacer on the first undoped semiconductor layer; a first source/drain region on the first spacer, the first source/drain region contacting a first channel region of the first nanostructures; and a first gate structure wrapped around the first channel region and the first dummy region of the first nanostructures.

Abstract: In a method of group control and management among electronic devices, wherein the electronic devices is in communication with a control device, a projectable space instance is provided for the control device to create a workspace, wherein a control and management tool and a plurality of unified tools for driving respective electronic devices are selectively added to the projectable space instance. The projectable space instance is then parsed with a projector by the control device to automatically generate a projected workspace corresponding to the workspace to be created via the projectable space instance. The control and management tool realizes at least one status information of at least a first one of the electronic devices by way of the unified tools, and controls at least a second one of the electronic devices to execute at least one task corresponding to the at least one status information.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: A protective assembly includes a cover plate, a buffer layer, and a flexible substrate. The buffer layer is disposed on the cover plate and made of transparent polymer. The buffer layer has a light transmittance greater than about 85%, a thickness ranging from about 3 ?m to about 15 ?m, and a Poisson's ratio greater than about 0.4. The flexible substrate is disposed on the buffer layer and doped with an inorganic compound. The flexible substrate has a thickness ranging from about 3 ?m to about 10 ?m and a Young's coefficient ranging from about 1 GPa to about 10 GPa.

Abstract: A display apparatus and an fingerprint sensing method thereof are provided. A display panel of the display apparatus has a pixel circuit array, an in-display touch sensor array, and an in-display fingerprint sensor array. A driving circuit drives the in-display fingerprint sensor array to read a fingerprint image. A current display frame period is divided into a plurality of unit periods, each of the unit periods includes at least one fingerprint sensing period and one or both of a display driving period and a touch sensing period. The driving circuit resets a current fingerprint sensor in the in-display fingerprint sensor array during a first fingerprint sensing period among these fingerprint sensing periods of the first display frame period. The driving circuit reads a sensing result of the current fingerprint sensor during a second fingerprint sensing period succeeding to the first fingerprint sensing period.