Patents by Inventor Shih-Chi Chen
Shih-Chi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12171091Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.Type: GrantFiled: August 9, 2023Date of Patent: December 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Yu Hsu, Jian-Hao Chen, Chia-Wei Chen, Shan-Mei Liao, Hui-Chi Chen, Yu-Chia Liang, Shih-Hao Lin, Kuei-Lun Lin, Kuo-Feng Yu, Feng-Cheng Yang, Yen-Ming Chen
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Publication number: 20240413221Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.Type: ApplicationFiled: July 11, 2024Publication date: December 12, 2024Inventors: Chia-Wei Chen, Chih-Yu Hsu, Hui-Chi Chen, Shan-Mei Liao, Jian-Hao Chen, Cheng-Hao Hou, Huang-Chin Chen, Cheng Hong Yang, Shih-Hao Lin, Tsung-Da Lin, Da-Yuan Lee, Kuo-Feng Yu, Feng-Cheng Yang, Chi On Chui, Yen-Ming Chen
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Publication number: 20240402915Abstract: A memory controller is arranged to access a memory device, and includes a receiving circuit. The receiving circuit is arranged to receive a data signal and a data strobe signal from the memory device, and includes a sampling circuit and a comparison circuit. The sampling circuit is arranged to sample the data signal or a delayed data signal according to a plurality of delayed versions of the data strobe signal to generate a plurality of sampling values, wherein the delayed data signal is a delayed version of the data signal. The comparison circuit is arranged to compare the plurality of sampling values to obtain a comparison result, and arranged to determine to provide the data signal or the delayed data signal to the sampling circuit according to the comparison result.Type: ApplicationFiled: May 15, 2024Publication date: December 5, 2024Applicant: Realtek Semiconductor Corp.Inventors: Shih-Chang Chen, Chih-Wei Chang, Chun-Chi Yu
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Patent number: 12159551Abstract: A medicament delivery device design evaluation apparatus is presented having a plurality of electronic demonstration units, wherein each electronic demonstration unit comprises a set of electronics, the set of electronics comprising a data receiver and at least one of an indication unit and a data transmitter, wherein the plurality of electronic demonstration units are configured to provide an indication when at least one of the plurality of electronic demonstration units receives a control signal.Type: GrantFiled: July 6, 2021Date of Patent: December 3, 2024Assignee: SHL Medical AGInventors: Shih-Hsun Tu, Hsueh-Yi Chen, Pei-Chi Hu, Chun-Yi Lee
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Publication number: 20240395902Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.Type: ApplicationFiled: July 31, 2024Publication date: November 28, 2024Inventors: Chien-Chih Lin, Yen-Ting Chen, Wen-Kai Lin, Szu-Chi Yang, Shih-Hao Lin, Tsung-Hung Lee, Ming-Lung Cheng
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Publication number: 20240395813Abstract: A method includes: forming a first stack of semiconductor channels and a second stack of semiconductor channels over a substrate, the first stack being adjacent the second stack, a transition region overlapping neighboring protruding corners of the first stack and the second stack; forming a plurality of sacrificial gates over the first stack and the second stack, the plurality of sacrificial gates extending in a first direction and being arranged along a second direction transverse the first direction based on a first pitch along a second direction, each of the plurality of sacrificial gates having a first width; simultaneously with the forming a plurality of sacrificial gates, forming a bar structure over the transition region and adjacent to the plurality of sacrificial gates, the bar structure having a second width that exceeds a sum of the first pitch and the first width; forming a plurality of source/drain openings in areas of the first and second stacks of semiconductor channels that are exposed by theType: ApplicationFiled: October 31, 2023Publication date: November 28, 2024Inventors: Chih-Hsiung PENG, Shih-Chi FU, Kuei-Shun CHEN, Te-Yu CHEN
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Publication number: 20240395860Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.Type: ApplicationFiled: July 31, 2024Publication date: November 28, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chih LIN, Yun-Ju PAN, Szu-Chi YANG, Jhih-Yang YAN, Shih-Hao LIN, Chung-Shu WU, Te-An YU, Shih-Chiang CHEN
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Publication number: 20240387534Abstract: A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Inventors: Huan-Chieh Su, Li-Zhen Yu, Chun-Yuan Chen, Shih-Chuan Chiu, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 12148805Abstract: A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.Type: GrantFiled: August 9, 2023Date of Patent: November 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Chuan Chiu, Huan-Chieh Su, Pei-Yu Wang, Cheng-Chi Chuang, Chun-Yuan Chen, Li-Zhen Yu, Chia-Hao Chang, Yu-Ming Lin, Chih-Hao Wang
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Publication number: 20240381608Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.Type: ApplicationFiled: July 23, 2024Publication date: November 14, 2024Inventors: Chih-Yu Hsu, Jian-Hao Chen, Chia-Wei Chen, Shan-Mei Liao, Hui-Chi Chen, Yu-Chia Liang, Shih-Hao Lin, Kuei-Lun Lin, Kuo-Feng Yu, Feng-Cheng Yang, Yen-Ming Chen
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Publication number: 20240379796Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.Type: ApplicationFiled: July 23, 2024Publication date: November 14, 2024Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Kuan-Ting Liu, Yen-Ju Chen, Chun-Chih Cheng, Wei-Chen Hsiao
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Patent number: 12142668Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.Type: GrantFiled: January 3, 2022Date of Patent: November 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chih Lin, Yen-Ting Chen, Wen-Kai Lin, Szu-Chi Yang, Shih-Hao Lin, Tsung-Hung Lee, Ming-Lung Cheng
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Publication number: 20240355684Abstract: A wafer stacking method includes the following steps. A first wafer is provided. A second wafer is bonded to the first wafer to form a first wafer stack structure. A first edge defect inspection is performed on the first wafer stack structure to find a first edge defect and measure a first distance in a radial direction between an edge of the first wafer stack structure and an end of the first edge defect away from the edge of the first wafer stack structure. A first trimming process with a range of a first width is performed from the edge of the first wafer stack structure to remove the first edge defect. Herein, the first width is greater than or equal to the first distance.Type: ApplicationFiled: May 4, 2023Publication date: October 24, 2024Applicant: Powerchip Semiconductor Manufacturing CorporationInventors: Chih Feng Sung, Wei Han Huang, Ming-Jui Tsai, Yu Chi Chen, Yung-Hsiang Chang, Chun-Lin Lu, Shih-Ping Lee
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Patent number: 12125852Abstract: A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.Type: GrantFiled: July 28, 2023Date of Patent: October 22, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Huan-Chieh Su, Li-Zhen Yu, Chun-Yuan Chen, Shih-Chuan Chiu, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 12119321Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section vieType: GrantFiled: September 19, 2022Date of Patent: October 15, 2024Assignee: EPISTAR CORPORATIONInventors: Shih-An Liao, Shau-Yi Chen, Ming-Chi Hsu, Chun-Hung Liu, Min-Hsun Hsieh
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Publication number: 20240312893Abstract: An electronic device is provided. The electronic device includes a base and a semiconductor device. The base has a top surface and a bottom surface. The semiconductor device is disposed on the top surface of the base. The semiconductor device has a device edge located within the base in a top view. The base has a unit pad array which is covered by the semiconductor device and electrically connected to the semiconductor device. The unit pad array includes a first pad region composed of a first row and a second row of the unit pad array. The first pad region includes first pads for transmitting commands and addresses to and from the semiconductor device. The first row of the unit pad array is arranged so that it is closer to the device edge than the second row of the unit pad array.Type: ApplicationFiled: March 4, 2024Publication date: September 19, 2024Inventors: Hui-Chi TANG, Shih-Yi SYU, Hao-Ju WANG, Pei-San CHEN, Duen-Yi HO
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Patent number: 12094948Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.Type: GrantFiled: September 3, 2021Date of Patent: September 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Wei Chen, Wei Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Kuo-Feng Yu, Shih-Hang Chiu, Wei-Cheng Wang, Kuan-Ting Liu, Yen-Ju Chen, Chun-Chih Cheng, Wei-Chen Hsiao
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Patent number: 12088359Abstract: An eye diagram measuring method includes: sampling a compensated input signal according to a reference voltage and a reference clock to obtain a first sampling result; and sampling a to-be-compensated input signal according to a scan voltage and a scan clock to obtain a second sampling result, including: (b1) storing a minimum phase and a voltage level which render the first sampling result identical to the second sampling result; (b2) increasing the voltage level and repeating operation (b1); (b3) decreasing the voltage level and repeating operation (b1); (b4) storing a maximum phase and the voltage level which render the first sampling result identical to the second sampling result; (b5) increasing the voltage level and repeating operation (b4); and (b6) decreasing the voltage level and repeating operation (b4). Voltage levels, maximum phases and minimum phases that are stored are for adjusting the reference voltage and the reference clock.Type: GrantFiled: October 5, 2022Date of Patent: September 10, 2024Assignee: Realtek Semiconductor CorporationInventors: Shih-Chang Chen, Chih-Wei Chang, Chun-Chi Yu
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Publication number: 20240297279Abstract: A light source assembly is provided, including a substrate; a light-emitting element disposed on the substrate; and an optical film disposed on the light-emitting element. A diffuser layer is disposed between the optical film and the light-emitting element, wherein a haze of the diffuser layer is greater than 85%, a distance between the diffuser layer and the light-emitting element is in a range from 0 mm to 10 mm, and a thickness of the light-emitting element is less than the distance.Type: ApplicationFiled: May 13, 2024Publication date: September 5, 2024Inventors: Chia-Lun CHEN, Shih-Chang HUANG, Ming-Hui CHU, Chih-Chang CHEN, Kai-Hsien HSIUNG, Hui-Chi WANG, Wun-Yuan SU
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Publication number: 20240297138Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first substrate and through vias formed through the first substrate. The package further includes redistribution layers formed over the first substrate and connected to the through vias and a first pillar layer formed over the redistribution layers. The package further includes a first barrier layer formed over the first pillar layer and a first cap layer formed over the first barrier layer. The package further includes an underfill layer formed over the redistribution layers and surrounding the first pillar layer, the first barrier layer, and the first cap layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first sidewall surface of the first pillar layer and a second sidewall surface of the first cap layer.Type: ApplicationFiled: May 13, 2024Publication date: September 5, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hung CHEN, Yu-Nu HSU, Chun-Chen LIU, Heng-Chi HUANG, Chien-Chen LI, Shih-Yen CHEN, Cheng-Nan HSIEH, Kuo-Chio LIU, Chen-Shien CHEN, Chin-Yu KU, Te-Hsun PANG, Yuan-Feng WU, Sen-Chi CHIANG