Patents by Inventor Shih-Chung Chen

Shih-Chung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210098581
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).
    Type: Application
    Filed: September 28, 2020
    Publication date: April 1, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Shih Chung Chen, Yixiong Yang, Lin Dong, Steven C.H. Hung, Srinivas Gandikota
  • Patent number: 10961720
    Abstract: The present invention provides a stand structure for a double-layer elevated floor, comprising: a stand, a T-shaped seat, a supporting block and a base plate. The stand is provided on a ground and has a hollow sleeve. The T-shaped seat includes a supporting plate and a screw formed below the supporting plate, where the screw is movably combined with a nut, such that when the screw is placed in the hollow sleeve, the T-shaped seat is adjusted by the nut to be at an upper position or a lower position on the stand. The supporting block is provided above the supporting plate. The base plate provided above the supporting block. A fixing seat is respectively provided at each corner of the base plate. Each fixing seat is used for accommodating and fixing one of supporting stands of plurality of elevated floor units.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: March 30, 2021
    Inventors: Yao-Chung Chen, Shih-Jan Wang
  • Patent number: 10948834
    Abstract: Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: March 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Ching-Chang Chen, Chien-Hua Lai, Wei-Chung Chen, Shih-Hao Kuo, Hsiu-Jen Wang
  • Publication number: 20210060727
    Abstract: A polishing pad conditioning apparatus includes a base, a fiber, and a polymer protruding from a surface of the base and encompassing the fiber.
    Type: Application
    Filed: July 6, 2020
    Publication date: March 4, 2021
    Inventors: Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng, Hung-Lin Chen
  • Publication number: 20210057551
    Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: Po-Chang Lin, Bo-Han Huang, Chih-Chung Chen, Chun-Hsien Lin, Shih-Hung Tsai, Po-Kuang Hsieh
  • Publication number: 20210059036
    Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG
  • Publication number: 20210043161
    Abstract: A cursor image detection comparison and feedback status determination method is disclosed. The method is based on a non-invasive data-extraction system architecture, and uses an image processing unit to perform detection comparison on a cursor image shown on an operation screen outputted from a machine controller. The method includes steps of obtaining cursor foreground and background images set by a user, and selecting an algorithm to process the cursor foreground and background images to generate a cursor mask, and reading a cursor image and applying the cursor mask on the cursor image for pattern comparison, transmitting information of a comparison result and a cursor feedback status to a software control system, so as to provide a correction system to perform a cursor process program and check whether the movement of the cursor meet a position controlled by a feedback and correction system, thereby completing closed-loop control for the cursor.
    Type: Application
    Filed: August 8, 2019
    Publication date: February 11, 2021
    Inventors: Chao-Tung YANG, Wei-Hung CHEN, Shih-Hsun LIN, Wei-Jyun TU, Chun-Hong LIU, Chien-Chung LIN, Chieh-Yuan LO, Hsiao-Ling CHANG
  • Publication number: 20210033986
    Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.
    Type: Application
    Filed: March 2, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang
  • Publication number: 20200411373
    Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.
    Type: Application
    Filed: June 28, 2020
    Publication date: December 31, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yixiong Yang, Srinivas Gandikota, Steven C.H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
  • Publication number: 20200411514
    Abstract: A semiconductor device and method are provided whereby a series of spacers are formed in a first region and a second region of a substrate. The series of spacers in the first region are patterned while the series of spacers in the second region are protected in order to separate the properties of the spacers in the first region from the properties of the spacers in the second region.
    Type: Application
    Filed: February 3, 2020
    Publication date: December 31, 2020
    Inventors: Shih-Yao Lin, Kuei-Yu Kao, Chi-Sheng Lai, Chih-Han Lin, Wei-Chung Sun, Ming-Ching Chang, Chao-Cheng Chen
  • Patent number: 10872763
    Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: David Chu, Steven C. Hung, Malcolm J. Bevan, Charles Chu, Tatsuya E. Sato, Shih-Chung Chen, Patricia M. Liu, Johanes Swenberg
  • Patent number: 10868148
    Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: December 15, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Chang Lin, Bo-Han Huang, Chih-Chung Chen, Chun-Hsien Lin, Shih-Hung Tsai, Po-Kuang Hsieh
  • Publication number: 20200389004
    Abstract: A access-floor-structure with grid-pattern suspended cable tray system includes a plurality of first beams and a plurality of second beams connected above and between a plurality of stands having a certain height, and floor units, connecting cover plates and center plates laid, so as to form a large-area access floor. Included below the access-floor-structure with arid-pattern suspended cable tray system further comprises a plurality of wiring troughs and a plurality of connecting bottom plates. The plurality of wiring troughs is provided below the connecting cover plate and is spaced by a distance from the ground. The plurality of connecting bottom plates are correspondingly provided below the center cover plate, and peripheries of each connecting bottom plate is used in connection with one end of each wiring trough, thereby some pipelines required to be installed are provided, and remaining pipelines are provided on the ground outside the plurality of wiring trough.
    Type: Application
    Filed: July 16, 2019
    Publication date: December 10, 2020
    Inventors: Yao-Chung CHEN, Shih-Jan WANG
  • Publication number: 20200388621
    Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 10, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Sung-Kwan Kang, Gill Yong Lee, Sang Ho Yu, Shih Chung Chen, Jeffrey W. Anthis
  • Publication number: 20200373404
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
  • Publication number: 20200373318
    Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M. Barnal Ramos, Shih Chung Chen
  • Publication number: 20200350157
    Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.
    Type: Application
    Filed: May 3, 2019
    Publication date: November 5, 2020
    Applicant: Applied Materials, Inc.
    Inventors: David Chu, Steven C. Hung, Malcolm J. Bevan, Charles Chu, Tatsuya E. Sato, Shih-Chung Chen, Patricia M. Liu, Johanes Swenberg
  • Publication number: 20200333711
    Abstract: Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.
    Type: Application
    Filed: June 30, 2020
    Publication date: October 22, 2020
    Inventors: Ching-Chang CHEN, Chien-Hua LAI, Wei-Chung CHEN, Shih-Hao KUO, Hsiu-Jen WANG
  • Publication number: 20200313274
    Abstract: Examples described herein relate to flexible antenna belts. For instance, a system may comprise a flexible antenna belt, where the flexible antenna belt is to transition between a closed position and an open position, and a flexible display coupled to the flexible antenna belt.
    Type: Application
    Filed: December 8, 2017
    Publication date: October 1, 2020
    Inventors: KUAN-TING WU, WEI-CHUNG CHEN, SHIH HUANG WU
  • Patent number: 10790287
    Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: September 29, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sung-Kwan Kang, Gill Yong Lee, Sang Ho Yu, Shih Chung Chen, Jeffrey W. Anthis