Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: A display device includes a first substrate, a plurality of light-emitting diodes, a first wavelength conversion layer and a metasurface. The light-emitting diodes are arranged on the first substrate, in which the light-emitting diodes emit a first color light, and the light-emitting diodes includes a first light-emitting diode, a second light-emitting diode and a third light-emitting diode. The first wavelength conversion layer is on the first light-emitting diode, and configured to convert the first color light emitted from the first light-emitting diode into a second color light, in which the second color light is different from the first color light. The metasurface is above the first wavelength conversion layer, and configured to reflect the first color light and pass the second color light.

Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.

Abstract: An information handling system may include a first member, a second member, and one or more hinge assemblies for coupling the first and second members, where the one or more hinge assemblies comprise a central assembly, a first and a second orbit mechanism configured to couple to the first and second members respectively, a first primary shaft coupling a first pair of link bars to the central assembly and to each other, a first secondary shaft coupling the first pair of link bars to each other and to the first orbit mechanism via a first track comprising an elongated opening, a second primary shaft coupling a second pair of link bars to the central assembly and to each other, and a second secondary shaft coupling the second pair of link bars to each other and to the second orbit mechanism via a second track comprising an elongated opening.

Abstract: A docking device and method with video capturing function are provided. The docking device includes a first interface, an output interface, a second interface, a first video processor and a video capturing device. The docking device receives a first input video signal or a second input video signal from the first interface or the second interface. The first video processor generates a first output video signal with an output format in response to the first input video signal or the second input video signal. The video capturing device generates a second output data signal with a format of the Universal Serial Bus in response to the first input video signal or the second input video signal.

Abstract: Examples of out-of-band switching of states of a computing device by a coupled peripheral device, are described. In an example, a sensor within the peripheral device may monitor an area in proximity to the peripheral device. A controller within the peripheral device may determine whether a user is present within the area. On determining the user to be present, a control signal may e generated. In an example, the control signal is conforms with the messaging protocol and is to is to cause the computing device to switch between an operational state and a low-power state. The controller may cause out-of-band transmission of the control signal to the computing device through the transmission interface.

Abstract: Examples of computing devices for changing an operating mode thereof are described herein. In an example, a signal is received by the computing device from an electronic device having a contactless reader. The electronic device is connectable to the computing device. The computing device Is operated in one of a low-power operating mode and a full-power operating mode based on the received signal.