Patents by Inventor Shih-Hsun Hsu
Shih-Hsun Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136383Abstract: A semiconductor device includes a single-layered dielectric layer, a conductive line, a conductive via and a conductive pad. The conductive line and the conductive via are disposed in the single-layered dielectric layer. The conductive pad is extended into the single-layered dielectric layer to electrically connected to the conductive line.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Patent number: 11967486Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.Type: GrantFiled: January 21, 2020Date of Patent: April 23, 2024Assignee: LAM RESEARCH CORPORATIONInventors: Andrew Stratton Bravo, Chih-Hsun Hsu, Serge Kosche, Stephen Whitten, Shih-Chung Kon, Mark Kawaguchi, Himanshu Chokshi, Dan Zhang, Gnanamani Amburose
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Publication number: 20240077804Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Chien-Cheng CHEN, Shih Ju HUANG, Pei-Cheng HSU, Ta-Cheng LIEN, Hsin-Chang LEE
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Patent number: 11901390Abstract: A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.Type: GrantFiled: November 15, 2021Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Publication number: 20230387158Abstract: In some embodiments, an image sensor is provided. The image sensor comprises a first photodetector disposed within a front-side surface of a semiconductor substrate. A trench isolation structure is disposed over a back-side surface of the semiconductor substrate. The trench isolation structure includes a buffer layer and a dielectric liner. The buffer layer covers the back-side surface of the semiconductor substrate and fills trenches that extend downward into the back-side surface of the semiconductor substrate. The dielectric liner is disposed between the buffer layer and the semiconductor substrate. A composite grid structure has composite grid segments that are aligned over the trenches, respectively. The buffer layer separates the dielectric liner from the composite grid structure. A light shield structure is disposed within the buffer layer and directly overlies the first photodetector.Type: ApplicationFiled: August 3, 2023Publication date: November 30, 2023Inventors: Shih-Hsun Hsu, Ping-Hao Lin
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Patent number: 11791356Abstract: An image sensor device is provided. The image sensor device includes a substrate. The image sensor device includes a light-sensing region in the substrate. The image sensor device includes an isolation structure in the substrate. The isolation structure surrounds the light-sensing region. The image sensor device includes a grid layer over the substrate. The grid layer is over the isolation structure. The image sensor device includes a first lens over the light-sensing region and surrounded by the grid layer. The image sensor device includes a color filter layer over and in direct contact with the first lens. The first lens is embedded in the color filter layer. The image sensor device includes a second lens over the color filter layer.Type: GrantFiled: January 7, 2022Date of Patent: October 17, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Shih-Hsun Hsu
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Publication number: 20220231075Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.Type: ApplicationFiled: April 11, 2022Publication date: July 21, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG, Shih-Hsun HSU
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Publication number: 20220209566Abstract: The present invention provides a method for controlling M power supplies connected in series. The method comprises the following steps. Sending a test signal by a master power supply. Recording a first delay time when the test signal is received by the 1st power supply and a second delay time when the test signal is received by the Mth power supply. Selecting a maximum delay time from the first delay time and the second delay time. Calculating a difference time between the first delay time and the second delay time. When the maximum delay time is the first delay time, the master power supply waits for the first delay time to execute the first command after receiving the first command. The 1st power supply directly executes the first command after receiving it. The Mth power supply waits for the difference time to execute the first command after receiving it.Type: ApplicationFiled: December 30, 2021Publication date: June 30, 2022Inventors: Chih-Cherng LU, Te-Lung CHEN, Chia-Ching TING, Shih-Hsun HSU, Chen-Syuan WONG
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Publication number: 20220130881Abstract: An image sensor device is provided. The image sensor device includes a substrate. The image sensor device includes a light-sensing region in the substrate. The image sensor device includes an isolation structure in the substrate. The isolation structure surrounds the light-sensing region. The image sensor device includes a grid layer over the substrate. The grid layer is over the isolation structure. The image sensor device includes a first lens over the light-sensing region and surrounded by the grid layer. The image sensor device includes a color filter layer over and in direct contact with the first lens. The first lens is embedded in the color filter layer. The image sensor device includes a second lens over the color filter layer.Type: ApplicationFiled: January 7, 2022Publication date: April 28, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Shih-Hsun HSU
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Patent number: 11302738Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.Type: GrantFiled: May 7, 2020Date of Patent: April 12, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
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Publication number: 20220077217Abstract: A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.Type: ApplicationFiled: November 15, 2021Publication date: March 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Patent number: 11222913Abstract: An image sensor device is provided. The image sensor device includes a substrate. The image sensor device includes a light-sensing region in the substrate. The image sensor device includes an isolation structure in the substrate. The isolation structure surrounds the light-sensing region. The image sensor device includes a grid layer over the substrate. The grid layer is over the isolation structure. The image sensor device includes a first lens over the light-sensing region and surrounded by the grid layer. The image sensor device includes a color filter layer over and in direct contact with the first lens. The image sensor device includes a second lens over the color filter layer.Type: GrantFiled: May 22, 2020Date of Patent: January 11, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Shih-Hsun Hsu
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Patent number: 11189657Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.Type: GrantFiled: May 4, 2020Date of Patent: November 30, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
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Patent number: 11177308Abstract: CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a plurality of dielectric patterns, a first conductive element and a second conductive element. The semiconductor substrate has a pixel region and a circuit region. The dielectric patterns are disposed between the first portion and the second portion, wherein top surfaces of the plurality of dielectric patterns are lower than top surfaces of the first and second portions. The first conductive element is disposed below the plurality of dielectric patterns. The second conductive element inserts between the plurality of dielectric patterns to electrically connect the first conductive element.Type: GrantFiled: May 6, 2019Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Publication number: 20210098519Abstract: In some embodiments, an image sensor is provided. The image sensor comprises a first photodetector disposed within a front-side surface of a semiconductor substrate. A trench isolation structure is disposed over a back-side surface of the semiconductor substrate. The trench isolation structure includes a buffer layer and a dielectric liner. The buffer layer covers the back-side surface of the semiconductor substrate and fills trenches that extend downward into the back-side surface of the semiconductor substrate. The dielectric liner is disposed between the buffer layer and the semiconductor substrate. A composite grid structure has composite grid segments that are aligned over the trenches, respectively. The buffer layer separates the dielectric liner from the composite grid structure. A light shield structure is disposed within the buffer layer and directly overlies the first photodetector.Type: ApplicationFiled: August 17, 2020Publication date: April 1, 2021Inventors: Shih-Hsun Hsu, Ping-Hao Lin
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Publication number: 20210018571Abstract: The present invention discloses a method for controlling power supplies, each of M power supply has a first end and a second end, the first end of the ith power supply is connected to the second end of the (i?1)th power supply. The method comprises the following steps. A testing procedure is performed by each of the M power supplies for determining whether the first end and the second end are connected or not. A first connection status code is set when the testing procedure determines that the first end is connected, and the second end is not connected. A second connection status code is set when the testing procedure determines that the first end and the second end are both connected. A third connection status code is set when the testing procedure determines that the second end is connected, and the first end is not connected.Type: ApplicationFiled: July 13, 2020Publication date: January 21, 2021Inventors: Te-Lung CHEN, Chih-Cherng LU, Shu-Che CHANG, Shih-Hsun HSU, Chia-Ching TING
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Publication number: 20200286939Abstract: An image sensor device is provided. The image sensor device includes a substrate. The image sensor device includes a light-sensing region in the substrate. The image sensor device includes an isolation structure in the substrate. The isolation structure surrounds the light-sensing region. The image sensor device includes a grid layer over the substrate. The grid layer is over the isolation structure. The image sensor device includes a first lens over the light-sensing region and surrounded by the grid layer. The image sensor device includes a color filter layer over and in direct contact with the first lens. The image sensor device includes a second lens over the color filter layer.Type: ApplicationFiled: May 22, 2020Publication date: September 10, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Shih-Hsun HSU
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Publication number: 20200266232Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.Type: ApplicationFiled: May 7, 2020Publication date: August 20, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
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Publication number: 20200266231Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.Type: ApplicationFiled: May 4, 2020Publication date: August 20, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Wei CHENG, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
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Patent number: 10665627Abstract: A method for forming an image sensor device is provided. The method includes forming an isolation structure in a substrate. The method includes forming a light-sensing region in the substrate. The isolation structure surrounds the light-sensing region. The method includes forming a grid layer over the substrate. The grid layer is over the isolation structure and has an opening over the light-sensing region. The method includes forming a first lens in or over the opening. The method includes forming a second lens over the first lens and the grid layer.Type: GrantFiled: July 30, 2018Date of Patent: May 26, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Shih-Hsun Hsu