Patents by Inventor Shih-I Chen

Shih-I Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250255074
    Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor structure, an outer electrode structure, an inner electrode structure, and an adjustment structure. The semiconductor structure includes a first portion and a second portion, wherein the second portion is on the first portion and includes an active region. The outer electrode structure is on the first portion of the semiconductor structure and has a first top surface. The inner electrode structure is on the second portion of the semiconductor structure and has a second top surface. The adjustment structure covers the semiconductor structure and is in contact with the outer electrode structure and the inner electrode structure, and the adjustment structure has a third top surface. The third top surface is substantially coplanar with either the first top surface, the second top surface, or both.
    Type: Application
    Filed: February 5, 2025
    Publication date: August 7, 2025
    Inventors: Chih-Ming SHEN, Chia-Yin HSU, Shih-I CHEN, Ching-En HUANG, Hao-Ming KU, Tzu-Ling YANG, Jui-Hsien TSENG
  • Patent number: 12369431
    Abstract: A semiconductor structure includes a substrate, an adhesion layer, arranged on the substrate, a first release layer, arranged on the adhesion layer and a first semiconductor device, including a semiconductor epitaxial stack, and a conducting structure directly connected to the first release layer. The first semiconductor device is not electrically connected to the substrate by the adhesion layer and the first release layer.
    Type: Grant
    Filed: February 13, 2024
    Date of Patent: July 22, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
  • Publication number: 20240243238
    Abstract: An optoelectronic semiconductor device is provided. The optoelectronic semiconductor device includes a substrate, a semiconductor stack located on the substrate; a first trench and a second trench provided in the semiconductor stack; a first insulating layer filling in the first trench and covering the semiconductor stack; a first metal layer covering the first insulating layer; a second metal layer covering the first insulating layer; and a second insulating layer located between the first metal layer and the first insulating layer, and between the second metal layer and the first insulating layer. A part of the second trench is uncovered by the first insulating layer and the second insulating layer.
    Type: Application
    Filed: January 16, 2024
    Publication date: July 18, 2024
    Inventors: Ya-Nan Lin, Shih-I Chen, Chun-Ming Wu, Chin-I Lin, Chun-Ru Yang
  • Publication number: 20240222566
    Abstract: An optoelectronic semiconductor device is provided. The optoelectronic semiconductor device includes a stack structure having a top surface and including a first semiconductor layer, a second semiconductor layer and an active region between the first semiconductor layer and the second semiconductor layer. The optoelectronic semiconductor device further includes a first insulating structure covering the stack structure and having a first upper surface and a sidewall. The first upper surface is coplanar with or lower than the top surface of the stack structure. The optoelectronic semiconductor device further includes a second insulating structure covering the first upper surface, the sidewall of the first insulating structure and the top surface of the stack structure. The first insulating structure directly contacts the second insulating structure.
    Type: Application
    Filed: January 3, 2024
    Publication date: July 4, 2024
    Inventors: Tzu-Ling Yang, Ching-En Huang, Hao-Ming Ku, Shih-I Chen, Chien-Jun Wei, Ya-Wen Lin, Chuang-Sheng Lin
  • Publication number: 20240186446
    Abstract: A semiconductor structure comprises a substrate, an adhesion layer, arranged on the substrate, a first release layer, arranged on the adhesion layer and a first semiconductor device, comprising a semiconductor epitaxial stack, and a conducting layer directly connected to the first release layer, wherein the first semiconductor device is not electrically connected to the substrate by the adhesion layer and the first release layer.
    Type: Application
    Filed: February 13, 2024
    Publication date: June 6, 2024
    Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
  • Publication number: 20240170613
    Abstract: An optoelectronic semiconductor element is provided. The optoelectronic semiconductor element includes a semiconductor stack and a first metal layer. The semiconductor stack includes a first portion and a second portion stacked in sequence, with the second portion including an active region. The first metal layer is located on the first portion and is electrically connected to the first portion. A top-view outline of the first portion shows a first pattern, a top-view outline of the second portion shows a second pattern, and a top-view outline of the first metal layer shows a third pattern. The area ratio of the third pattern to the first pattern is from 0.5% to 10%.
    Type: Application
    Filed: November 16, 2023
    Publication date: May 23, 2024
    Inventors: Ching-En Huang, Chuang-Sheng Lin, Hao-Ming Ku, Shih-I Chen
  • Publication number: 20240149740
    Abstract: A public transport vehicle charging system is applied to multiple charging stations and an electric vehicle. The public transport vehicle charging system includes a server communicatively connected to the charging stations and the electric vehicle. The server is configured to establish a charging decision model according to multiple historical conditions and a transport schedule. The server is configured to calculate multiple ideal decisions according to the historical conditions and the transport schedule, so as to adjust multiple parameters in the charging decision model. When the electric vehicle drives toward a first charging station according to the transport schedule, the server is configured to input a current condition into the charging decision model, so as to selectively charge the electric vehicle by the first charging station. The current condition includes a current remaining power and a current position of the electric vehicle.
    Type: Application
    Filed: November 21, 2022
    Publication date: May 9, 2024
    Inventors: Yweting TSAI, Shih-I CHEN, Kuo-Hua WU, Yu-Jin LIN, Hong-Tzer YANG
  • Publication number: 20240097403
    Abstract: A laser device is provided. The laser device includes a stack of epitaxial layers, a first conductive layer, an intermediate layer, and a first electrode. The stack of epitaxial layers has a central region and an edge region. The stack of epitaxial layers includes a first reflective structure, an active region disposed on the first reflective structure, a second reflective structure disposed on the active region. The first conductive layer disposes on the stack of epitaxial layers and covers the central region and at least a part of the edge region. The intermediate layer has a first opening that corresponding to the central region of the stack of epitaxial layers, wherein the intermediate layer comprises insulating material or metal. The first electrode disposes on the first conductive layer.
    Type: Application
    Filed: September 14, 2023
    Publication date: March 21, 2024
    Inventors: Jung-Jen Li, Ching-En Huang, Hao-Ming Ku, Shih-I Chen
  • Patent number: 11901478
    Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: February 13, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
  • Publication number: 20240021772
    Abstract: An optoelectronic semiconductor device is provided. The optoelectronic semiconductor device includes an epitaxial stack, a trench, a concave portion, a first contact structure, and a first electrode. The epitaxial stack includes a first semiconductor structure, an active structure on the first semiconductor structure, and a second semiconductor structure on the active structure, wherein the epitaxial stack has a first portion and a second portion, and the second semiconductor structure of the first portion is separated from the second semiconductor structure of the second portion. The trench is located between the first portion and the second portion. The concave portion is located in the first portion. The first contact structure is located in the concave portion. The first electrode covers the first contact structure. When the optoelectronic semiconductor device is operating, the first portion does not emit light.
    Type: Application
    Filed: July 14, 2023
    Publication date: January 18, 2024
    Inventors: Ching-En Huang, Hao-Ming Ku, Shih-I Chen, Tzu-Ling Yang, Ya-Wen Lin, Chuang-Sheng Lin, Yi-Chia Ho
  • Patent number: 11600749
    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: March 7, 2023
    Assignee: EPISTAR CORPORATION
    Inventors: Shih-I Chen, Wei-Yu Chen, Yi-Ming Chen, Ching-Pei Lin, Tsung-Xian Lee
  • Publication number: 20220123167
    Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.
    Type: Application
    Filed: December 27, 2021
    Publication date: April 21, 2022
    Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
  • Patent number: 11211522
    Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: December 28, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
  • Patent number: 10985301
    Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: April 20, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Han-Min Wu, Ye-Ming Hsu, Chien-Fu Huang, Chao-Hsing Chen, Chiu-Lin Yao, Hsin-Mao Liu, Chien-Kai Chung
  • Publication number: 20200321487
    Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.
    Type: Application
    Filed: June 22, 2020
    Publication date: October 8, 2020
    Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
  • Patent number: 10693034
    Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: June 23, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
  • Patent number: 10693039
    Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: June 23, 2020
    Assignee: Epistar Corporation
    Inventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
  • Patent number: 10566498
    Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: February 18, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
  • Patent number: 10553761
    Abstract: A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: February 4, 2020
    Assignee: Epistar Corporation
    Inventors: Fu Chun Tsai, Wen Luh Liao, Shih I Chen, Chia Liang Hsu, Chih Chiang Lu
  • Patent number: 10367118
    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 30, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin