Patents by Inventor Shih-I Chen
Shih-I Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10038117Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: GrantFiled: September 8, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
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Patent number: 10014441Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.Type: GrantFiled: December 22, 2014Date of Patent: July 3, 2018Assignee: EPISTAR CORPORATIONInventors: Shih-I Chen, Wei-Yu Chen, Yi-Ming Chen, Ching-Pei Lin, Tsung-Xian Lee
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Publication number: 20180182923Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.Type: ApplicationFiled: February 2, 2018Publication date: June 28, 2018Inventors: Fu Chun TSAI, Wen Luh LIAO, Shih I CHEN, Chia Liang HSU, Chih Chiang LU
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Patent number: 9997687Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.Type: GrantFiled: January 9, 2017Date of Patent: June 12, 2018Assignee: EPISTAR CORPORATIONInventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Han-Min Wu, Ye-Ming Hsu, Chien-Fu Huang, Chao-Hsing Chen, Chiu-Lin Yao, Hsin-Mao Liu, Chien-Kai Chung
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Publication number: 20180013037Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: ApplicationFiled: September 8, 2017Publication date: January 11, 2018Inventors: Hsin-Chih CHIU, Shih-I CHEN, You-Hsien CHANG, Hao-Min KU, Ching-Yuan TSAI, Kuan-Chih KUO, Chih-Hung HSIAO, Rong-Ren LEE
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Publication number: 20170373219Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: ApplicationFiled: August 22, 2017Publication date: December 28, 2017Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
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Patent number: 9793436Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.Type: GrantFiled: October 24, 2016Date of Patent: October 17, 2017Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
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Publication number: 20170256678Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.Type: ApplicationFiled: May 23, 2017Publication date: September 7, 2017Inventors: Wen-Luh LIAO, Shao-Ping LU, Hung-Ta CHENG, Shih-I CHEN, Chia-Liang HSU, Shou-Chin WEI, Ching-Pei LIN, Yu-Ren PENG, Chien-Fu HUANG, Wei-Yu CHEN, Chun-Hsien CHANG
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Publication number: 20170236978Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.Type: ApplicationFiled: April 28, 2017Publication date: August 17, 2017Inventors: Fu Chun TSAI, Wen Luh LIAO, Shih I CHEN, Chia Liang HSU, Chih Chiang LU
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Patent number: 9685588Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.Type: GrantFiled: March 29, 2016Date of Patent: June 20, 2017Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
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Patent number: 9666780Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.Type: GrantFiled: March 23, 2016Date of Patent: May 30, 2017Assignee: EPISTAR CORPORATIONInventors: Fu Chun Tsai, Wen Luh Liao, Shih I Chen, Chia Liang Hsu, Chih Chiang Lu
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Publication number: 20170117450Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.Type: ApplicationFiled: January 9, 2017Publication date: April 27, 2017Inventors: Shih-I CHEN, Chia-Liang HSU, Tzu-Chieh HSU, Han-Min WU, Ye-Ming HSU, Chien-Fu HUANG, Chao-Hsing CHEN, Chiu-Lin YAO, Hsin-Mao LIU, Chien-Kai CHUNG
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Patent number: 9601667Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.Type: GrantFiled: January 22, 2016Date of Patent: March 21, 2017Assignee: EPISTAR CORPORATIONInventors: Wen-Luh Liao, Hung-Ta Cheng, Yao-Ru Chang, Shih-I Chen, Chia-Liang Hsu
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Patent number: 9577170Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.Type: GrantFiled: March 20, 2015Date of Patent: February 21, 2017Assignee: EPISTAR CORPORATIONInventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Han-Min Wu, Ye-Ming Hsu, Chien-Fu Huang, Chao-Hsing Chen, Chiu-Lin Yao, Hsin-Mao Liu, Chien-Kai Chung
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Publication number: 20170040492Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.Type: ApplicationFiled: October 24, 2016Publication date: February 9, 2017Inventors: Hsin-Chih CHIU, Shih-I CHEN, You-Hsien CHANG, Hao-Min KU, Ching-Yuan TSAI, Kuan-Chih KUO, Chih-Hung HSIAO, Rong-Ren LEE
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Publication number: 20170005227Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.Type: ApplicationFiled: September 15, 2016Publication date: January 5, 2017Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
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Patent number: 9490394Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and second semiconductor stack for emitting a light; and a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface. The main light-extraction surface comprises a first light-extraction region, a second light-extraction region, and a maximum near-field luminous intensity. The distribution of the near-field luminous intensity in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the distribution of the near-field luminous intensity in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity. A ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.Type: GrantFiled: January 15, 2016Date of Patent: November 8, 2016Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, Chih-Chiang Lu
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Patent number: 9478698Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.Type: GrantFiled: February 6, 2014Date of Patent: October 25, 2016Assignee: EPISTAR CORPORATIONInventors: Tsung-Hsien Yang, Tzu-Chieh Hsu, Yi-Ming Chen, Yi-Tang Lai, Jhih-Jheng Yang, Chih-Wei Wei, Ching-Sheng Chen, Shih-I Chen, Chia-Liang Hsu, Ye-Ming Hsu
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Patent number: 9472719Abstract: A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength ? in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.Type: GrantFiled: February 18, 2015Date of Patent: October 18, 2016Assignee: EPISTAR CORPORATIONInventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
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Publication number: 20160240731Abstract: A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength ? in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.Type: ApplicationFiled: February 18, 2015Publication date: August 18, 2016Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin