Patents by Inventor Shih-I Chen
Shih-I Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8643054Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.Type: GrantFiled: August 27, 2013Date of Patent: February 4, 2014Assignee: Epistar CorporationInventors: Chien-Fu Huang, Min-Hsun Hsieh, Chih-Chiang Lu, Chia-Liang Hsu, Shih-I Chen
-
Publication number: 20140014994Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.Type: ApplicationFiled: July 1, 2013Publication date: January 16, 2014Inventors: Shih-I Chen, CHIA-LIANG HSU, Tzu-Chieh Hsu, Chun-Yi Wu, Chien-Fu Huang, Ching-Pei Lin
-
Publication number: 20130341667Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.Type: ApplicationFiled: August 27, 2013Publication date: December 26, 2013Applicant: EPISTAR CORPORATIONInventors: Chien-Fu HUANG, Min-Hsun HSIEH, Chih-Chiang LU, Chia-Liang HSU, Shih-I CHEN
-
Publication number: 20130256731Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.Type: ApplicationFiled: May 23, 2013Publication date: October 3, 2013Applicant: EPISTAR CORPORATIONInventors: Huang Chien FU, Shih-I CHEN, Yi Ming CHEN, Tzu Chieh HSU, Jhih-Sian WANG
-
Publication number: 20130256729Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending porType: ApplicationFiled: March 28, 2013Publication date: October 3, 2013Applicant: EPISTAR CORPORATIONInventors: Shih-I CHEN, Wei-Yu CHEN, Yi-Ming CHEN, Ching-Pei LIN, Tsung-Xian LEE
-
Patent number: 8530927Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.Type: GrantFiled: September 10, 2012Date of Patent: September 10, 2013Assignee: Epistar CorporationInventors: Chien-Fu Huang, Min-Hsun Hsieh, Chih-Chiang Lu, Chia-Liang Hsu, Shih-I Chen
-
Patent number: 8474233Abstract: An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.Type: GrantFiled: June 20, 2012Date of Patent: July 2, 2013Assignee: Epistar CorporationInventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Chun-Yi Wu, Chien-Fu Huang
-
Patent number: 8450767Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.Type: GrantFiled: January 12, 2011Date of Patent: May 28, 2013Assignee: Epistar CorporationInventors: Huang-Chien Fu, Shih-I Chen, Yi Ming Chen, Tzu Chieh Hsu, Jhih-Sian Wang
-
Publication number: 20130083705Abstract: A time division duplex orthogonal frequency division multiplexing (TDD-OFDM) distributed antenna system (DAS), a base station and a remote access unit for the same are provided. The base station performs an inverse fast Fourier transform on a user downlink signal, a transmitting/receiving enable signal and an input control signal to generate a first OFDM signal. The user downlink signal is carried on a used subcarrier set of the first OFDM signal, while the transmitting/receiving enable signal and the input control signal are carried on a guard band subcarrier set of the first OFDM signal. The remote access unit receives the first OFDM signal via a fiber transmission line, switches between a transmitting mode and a receiving mode periodically, performs a clock synchronization with the base station according to the transmitting/receiving enable signal, and performs a system configuration according to the input control signal.Type: ApplicationFiled: November 14, 2011Publication date: April 4, 2013Applicant: INSTITUTE FOR INFORMATION INDUSTRYInventors: Chingwo Ma, I-Chou Chung, Shih-i Chen, Chi-Hsien Kao
-
Publication number: 20130001624Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Inventors: Chien-Fu HUANG, Min-Hsun HSIEH, Chih-Chiang LU, Chia-Liang HSU, Shih-I CHEN
-
Publication number: 20120313249Abstract: A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.Type: ApplicationFiled: June 7, 2012Publication date: December 13, 2012Inventors: Shih-I CHEN, Ching-Pei Lin, Tzu-Chieh Hsu, Chia-Liang Hsu
-
Publication number: 20120256164Abstract: An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.Type: ApplicationFiled: June 20, 2012Publication date: October 11, 2012Inventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Chun-Yi Wu, Chien-Fu Huang
-
Patent number: 8263998Abstract: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.Type: GrantFiled: January 19, 2011Date of Patent: September 11, 2012Assignee: Epistar CorporationInventors: Chien-Fu Huang, Min-Hsun Hsieh, Chih-Chiang Lu, Chia-Liang Hsu, Shih-I Chen
-
Patent number: 8207550Abstract: One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure.Type: GrantFiled: February 4, 2011Date of Patent: June 26, 2012Assignee: EPISTAR CorporationInventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Chun-Yi Wu, Chien-Fu Huang
-
Publication number: 20120080697Abstract: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.Type: ApplicationFiled: July 1, 2011Publication date: April 5, 2012Applicant: Epistar CorporationInventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Han-Min Wu, Ye-Ming Hsu, Chien-Fu Huang, Chao-Hsing Chen, Chiu-Lin Yao, Hsin-Mao Liu, Chien-Kai Chun
-
Patent number: 8049242Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.Type: GrantFiled: July 13, 2010Date of Patent: November 1, 2011Assignee: Epistar CorporationInventors: Jin-Ywan Lin, Jen-Chau Wu, Chih-Chiang Lu, Wei-Chih Peng, Ching-Pu Tai, Shih-I Chen
-
Publication number: 20110241057Abstract: A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.Type: ApplicationFiled: June 16, 2011Publication date: October 6, 2011Inventors: Chien-Fu SHEN, Chao-Hsing Chen, Chien-Fu Huang, Shih-I Chen, Chiu-Lin Yao, Chia-Liang Hsu, Chen Ou
-
Patent number: D648287Type: GrantFiled: March 30, 2011Date of Patent: November 8, 2011Assignee: Epistar CorporationInventors: Chia-Liang Hsu, Han-Min Wu, Shih-I Chen, Chun-Yi Wu, Mei-Chun Liu
-
Patent number: D676001Type: GrantFiled: April 7, 2011Date of Patent: February 12, 2013Assignee: Epistar CorporationInventors: Chia-Liang Hsu, Chun-Yi Wu, Shih-I Chen
-
Patent number: D680977Type: GrantFiled: September 14, 2012Date of Patent: April 30, 2013Assignee: Epistar CorporationInventors: Chia-Liang Hsu, Chun-Yi Wu, Shih-I Chen