Patents by Inventor Shih-Ming Wang

Shih-Ming Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050070058
    Abstract: An ILD dielectric layer stack and method for forming the same, the method includes a semiconductor substrate including CMOS transistors with gate electrode portions; depositing a first layer including phosphorous doped SiO2 over the semiconductor substrate to a thickness sufficient to cover the gate electrode portions including intervening gaps; depositing a second layer of undoped SiO2 over and contacting the first layer to a thickness sufficient to leave a second layer thickness portion overlying the first layer following a subsequent oxide chemical mechanical polish (CMP) planarization process; carrying out the oxide CMP process to planarize the second layer and leave the second layer thickness portion; and forming metal filled local interconnects extending through a thickness portion of the first and second layers.
    Type: Application
    Filed: September 26, 2003
    Publication date: March 31, 2005
    Inventors: Han-Ti Hsiaw, Shwang-Ming Jeng, Shih-Ming Wang, Fu-Chi Hsu
  • Patent number: 6869836
    Abstract: An ILD dielectric layer stack and method for forming the same, the method includes a semiconductor substrate including CMOS transistors with gate electrode portions; depositing a first layer including phosphorous doped SiO2 over the semiconductor substrate to a thickness sufficient to cover the gate electrode portions including intervening gaps; depositing a second layer of undoped SiO2 over and contacting the first layer to a thickness sufficient to leave a second layer thickness portion overlying the first layer following a subsequent oxide chemical mechanical polish (CMP) planarization process; carrying out the oxide CMP process to planarize the second layer and leave the second layer thickness portion; and forming metal filled local interconnects extending through a thickness portion of the first and second layers.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: March 22, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Han-Ti Hsiaw, Shwang-Ming Jeng, Shih-Ming Wang, Fu-Chi Hsu
  • Patent number: 6863796
    Abstract: A method for cleaning an electrodeposition surface following an electroplating process including providing a process surface including electro-chemically deposited metal following an electrodeposition process; and, cleaning the process surface with a sulfuric acidic cleaning solution to remove electrodeposited metal particles according to at least one of an immersion and spraying process the spraying process including simultaneously rotating the process surface.
    Type: Grant
    Filed: July 2, 2002
    Date of Patent: March 8, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Chia-Liang Chueh, Volume Chien, Shih-Ming Wang
  • Patent number: 6716740
    Abstract: A method for depositing an inter-metal-dielectric layer on a semiconductor substrate by plasma chemical vapor deposition without the layer cracking defect is disclosed. The semiconductor substrate is first heat-treated in the same plasma process chamber to a temperature of at least 300° C. for a length of time sufficient to outgas a surface of the semiconductor substrate. The impurity gases absorbed on the surface of the semiconductor substrate can be effectively outgassed during the heat treatment process such that they are not trapped under an IMD layer deposited in a subsequent plasma deposition process. The method effectively minimizes or eliminates completely the IMD layer cracking defect of the dielectric layer.
    Type: Grant
    Filed: October 9, 2001
    Date of Patent: April 6, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Ming Wang, Long-Shang Chuang, Jui-Ping Chuang, Chin-Hsiung Ho, Mei-Yen Li, Chien-Kang Chou
  • Publication number: 20040004004
    Abstract: A method for cleaning an electrodeposition surface following an electroplating process including providing a process surface including electro-chemically deposited metal following an electrodeposition process; and, cleaning the process surface with a sulfuric acidic cleaning solution to remove electrodeposited metal particles according to at least one of an immersion and spraying process the spraying process including simultaneously rotating the process surface.
    Type: Application
    Filed: July 2, 2002
    Publication date: January 8, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Liang Chueh, Volume Chien, Shih-Ming Wang
  • Publication number: 20030068902
    Abstract: A method for depositing an inter-metal-dielectric layer on a semiconductor substrate by plasma chemical vapor deposition without the layer cracking defect is disclosed. The semiconductor substrate is first heat-treated in the same plasma process chamber to a temperature of at least 300° C. for a length of time sufficient to outgas a surface of the semiconductor substrate. The impurity gases absorbed on the surface of the semiconductor substrate can be effectively outgassed during the heat treatment process such that they are not trapped under an IMD layer deposited in a subsequent plasma deposition process. The method effectively minimizes or eliminates completely the IMD layer cracking defect of the dielectric layer.
    Type: Application
    Filed: October 9, 2001
    Publication date: April 10, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Ming Wang, Long-Shang Chuang, Jui-Ping Chuang, Chin-Hsiung Ho, Mei-Yen Li, Chien-Kang Chou
  • Publication number: 20020185182
    Abstract: A lavatory faucet comprises a connection pipe, a water mixing bolt seat mounted on the connection pipe, a fastening board movably located over the water mixing bolt seat, a water mixing bolt tube, a locating bolt, and a faucet neck mounted on the lavatory basin and engaged with the locating bolt and the water mixing bolt tube which is located by the fastening board pressing against the lavatory basin.
    Type: Application
    Filed: June 11, 2001
    Publication date: December 12, 2002
    Inventor: Shih-Ming Wang
  • Patent number: 6491058
    Abstract: A lavatory faucet comprises a connection pipe, a water mixing bolt seat mounted on the connection pipe, a fastening board movably located over the water mixing bolt seat, a water mixing bolt tube, a locating bolt, and a faucet neck mounted on the lavatory basin and engaged with the locating bolt and the water mixing bolt tube which is located by the fastening board pressing against the lavatory basin.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: December 10, 2002
    Inventor: Shih-Ming Wang
  • Patent number: 6431211
    Abstract: A faucet is provided with a water controlling stem structure including a housing, a water control stem, a retaining piece, a water resisting block, a water distributing block, a water admitting member, a water discharging ring, and a spring. The water admitting member is provided with a water stopping edge, a through hole, a locating block, and a locating portion. The water admitting member is disposed in the bottom end of the housing such that the water stopping edge and the locating block of the water admitting member are joined with the water distributing block, and such that the through hole of the water admitting member is aligned with the center through hole of the water discharging ring.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: August 13, 2002
    Inventor: Shih-Ming Wang
  • Patent number: 6401748
    Abstract: A lavatory faucet comprises a connection pipe, a fixation board, a water mixing bolt tube, a locating bolt, and a faucet neck for discharging water. The water mixing bolt tube is located securely by the connection pipe and the fixation board, which are disposed between a cold water control valve and a hot water control valve. The faucet neck is securely connected with the water mixing bolt tube in conjunction with the locating bolt which is engaged with a threaded hole of the bottom end of the faucet neck via a through hole of a lug of the connection pipe.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: June 11, 2002
    Inventor: Shih-Ming Wang
  • Patent number: 6381776
    Abstract: A lavatory faucet comprises a water mixing bolt seat, a locating plate, a water mixing bolt tube, a locating bolt, and a faucet neck. The water mixing bolt seat is connected with a cold water control valve and a hot water control valve. The water mixing bolt tube is securely mounted on the water mixing bolt seat in conjunction with the locating plate and the locating bolt. The locating plate is pressed against the lavatory basin. The locating bolt enables the inner end of the faucet neck to be located securely on a support plate of the water mixing bolt seat.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: May 7, 2002
    Inventor: Shih-Ming Wang
  • Patent number: 6363961
    Abstract: A massage bath tub faucet structure including a convergent pipe which is connected with a first support pipe and a second support pipe in communication with a shower head. The first support pipe is provided in the wall with a locating edge. The first support pipe is fastened with a fastening hole of the faucet in conjunction with a fastening bolt. The first support pipe is provided therein to an internal pipe which is provided with a water hole in communication with the interior of the faucet. The internal pipe is provided therein with a pull rod for regulating the flow of water to the shower head or the faucet.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: April 2, 2002
    Inventor: Shih-Ming Wang
  • Patent number: 6279605
    Abstract: A ceramic control valve of a faucet including a water stopping seat which is provided in the periphery thereof with a retaining edge. The water stopping seat is disposed in a floating fashion in the cylindrical valve body of the ceramic control valve such that the retaining edge of the water stopping seat is retained in an annular recess of the cylindrical valve body. The service life spans of the washers of the stationary valve block of the ceramic control valve and the circular surface of the faucet are thus prolonged.
    Type: Grant
    Filed: July 5, 2000
    Date of Patent: August 28, 2001
    Inventor: Shih-Ming Wang
  • Patent number: 6214184
    Abstract: The present invention provides a wafer pedestal for holding a semiconductor wafer that includes a pedestal body of essentially a metal disc and at least three insulating spacers that are situated on a top surface of the pedestal body for supporting and insulating a silicon wafer on and from the pedestal body. A wafer may be suitably supported by the insulating plugs such that no concentrated electric field will form on the wafer surface at or near the insulating plugs to cause arcing and furthermore, the wafer is supported sufficiently away from the pedestal body such that any subsequent film depositions does not adhere the wafer to the pedestal body.
    Type: Grant
    Filed: May 14, 1997
    Date of Patent: April 10, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Tingray Chien, Shih-Ming Wang, Shun-Hsiang Chen
  • Patent number: 5948203
    Abstract: An apparatus for chemical-mechanical-polishing(CMP) is described which employs a dedicated optical film thickness monitor for quasi in-situ assessment of the thickness of a dielectric film on an integrated circuit wafer during CMP operations involving planarization and polish-back. The wafers being polished remain mounted on the CMP wafer carrier and are transported from the polishing platen to the optical film thickness measuring device by an integral mechanical transport assembly which can be operated either manually or automatically by a computer. Real-time polishing rates are determined after each polish/measurement cycle so that time variant polishing rates are redressed.
    Type: Grant
    Filed: July 29, 1996
    Date of Patent: September 7, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Shih-Ming Wang
  • Patent number: 5646071
    Abstract: A method and apparatus for applying a liquid to the surface of semiconductor wafer are described. The wafer is rotated about an axis; perpendicular to its main surface. Liquid is dispensed onto the surface of the spinning wafer from at least two dispensing bottles. One of the dispensing bottles is positioned above the center of rotation while the others are located between it and the wafer's edge. The rate at which liquid emerges from each of the dispensing bottles is independently controlled for each bottle.
    Type: Grant
    Filed: January 19, 1995
    Date of Patent: July 8, 1997
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Hwang Lin, Shih-Ming Wang, Li-Chum Chen
  • Patent number: 5554567
    Abstract: A method is described for eliminating problems of adhesion, including peeling and blistering, between the surface of a cured spin- on-glass layer and a second deposited layer of a different material. After curing, and prior to the deposition of the second layer, the layer of spin-on-glass is subjected to a short heat treatment in vacuum. The second layer is then deposited without breaking the vacuum.
    Type: Grant
    Filed: September 1, 1994
    Date of Patent: September 10, 1996
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventor: Shih-Ming Wang