Abstract: A lighting unit that includes a light source and a reflector assembly upon which the light source is mounted. The reflector assembly includes a first reflector having a first curved reflective surface extending away from the light source, and a second reflector having a second curved reflective surface extending away from the light source. The first curved reflective surface faces and opposes the second curved reflective surface. The first curved reflective surface has a curvature that is different from that of the second curved reflective surface. The first and second curved reflective surfaces both preferably terminate in convexities that reduce the size of dark band areas of illumination.

Abstract: A multi-tiered network for gathering detected condition information includes a first tier having first tier nodes and a second tier having a second tier node. The second tier node is operable to receive detected condition information from at least one of the first tier nodes in a substantially autonomous manner. In addition, the second tier node is operable to at least one of store, process, and transmit the detected condition information. The network also includes a third tier having a third tier node configured to receive the detected condition information and to at least one of store and process the detected condition information.

Abstract: A high power LED lamp and method for retrofitting conventional traffic signal lamps. The LED lamp includes a housing, a power supply disposed in the housing, a plurality of LEDs mounted to a substantially planar mounting surface in the housing and electrically connected to the power supply for producing diverging light, and a threaded electrical connector extending from the housing. The method includes replacing a convention incandescent light bulb with the LED lamp, and installing a Fresnel lens inside the traffic signal lamp that collimates and just fills and illuminates the outer lens of the traffic signal lamp.

Abstract: A photonic crystal system and a method for controlling the direction of radiation propagation are disclosed. The photonic crystal system includes a photonic crystal and a deformation source positioned to deform the photonic crystal. The photonic crystal system optionally includes a radiation source that emits radiation at a frequency within a frequency range over which the photonic crystal exhibits a negative index of refraction.

Abstract: In a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.

Abstract: A system and method for efficiently and accurately determining grating profiles uses characteristic signature matching in a discrepancy enhanced library generation process. Using light scattering theory, a series of scattering signatures vs. scattering angles or wavelengths are generated based on the designed grating parameters, for example. CD, thickness and Line:Space ratio. This method selects characteristic portions of the signatures wherever their discrepancy exceeds the preset criteria and reforms a characteristic signature library for quick and accurate matching. A rigorous coupled wave theory can be used to generate a diffraction library including a plurality of simulated diffraction spectrums based on a predetermined structural parameter of the grating. The characteristic region of the plurality of simulated diffraction spectrums is determined based on if the root mean square error of the plurality of simulated diffraction spectrums is larger than a noise level of a measuring machine.

Abstract: Precision in scatterometry measurements is improved by designing the reticle, or the target grating formed by the reticle, for greater overlay measurement sensitivity. Parameters of the structure and material of the substrate are first determined. These parameters may include the material composition, thickness, and sidewall angles of the sample substrate. The target grating is then designed so that the overlay measurement, on the sample substrate, is made more sensitive. A suitable measurement wavelength is selected, optionally via computer simulation, to further improve the sensitivity. This method increases the change of reflective signatures with overlay offsets, and thus improves the sensitivity of overlay measurement.

Abstract: A method of entropy-based image registration comprising estimating conditional probability distribution functions (PDFs) between two images as multivariate Gaussian distributions; mathematically relating an entropy of the multivariate Gaussian distributions to a sum of square differences (SSD) between the images; and optimising the registration between the images utilising a cost function based on the SSD.

Abstract: A PCB comprises a slender substrate, a thermal compression area and at least a slit. The thermal compression area, placed on the slender substrate, has a plurality of bonding pads for a plurality of TCPs to be mounted thereon and a plurality of dummy pads placed between the TCPs. The slit transversely crosses the thermal compression area and slices some of the dummy pads. When the TCPs are connected to the bonding pads of the PCB, the thermal compression area is heated to around 150° C. to 200° C. Therefore, the slit can block the thermal expansion to be accumulated along the longitudinal direction of the thermal compression area.

Abstract: A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.

Abstract: A gate structure is disclosed with improved endurance characteristics. Source and drain regions are contained within a semiconductor region of a substrate. At least a gate stack, which is disposed over the semiconductor region, is situated between the source and drain regions. The gate stack contains a gate insulator layer formed over the semiconductor region, a conductive gate layer disposed over the gate insulator layer, a top gate stack layer disposed over the conductive gate layer. A sidewall insulator layer is disposed over sidewalls of the gate stack. Nitrogen atoms are incorporated along the conductive gate layer sidewall-sidewall insulator layer interface and along the conductive gate layer-gate insulator layer interface in the vicinity of the conductive gate layer edge.

Abstract: The invention relates to a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors. The semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. Since the two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors, the method of the present invention can achieve a better result for both the NMOS and PMOS transistors.