Abstract: A hinge mechanism is provided, including a connecting unit, a hinge unit, and a locking element. The connecting unit has a connecting member and a tubular member. The tubular member is disposed on the connecting member. The hinge unit has a first member, a second member, a shaft, and a rod. The shaft pivotally connects the first member to the second member. The rod is affixed to the second member. The rod extends into the tubular member and has a slot. The locking element is fastened through the tubular member and joined in the slot.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: An ozone water control valve may include a first water outlet head, a first connector, and a rotary knob. The first water outlet head has a water chamber axially penetrating through the first water outlet head, and a lateral hole is formed at the lateral side of the first water outlet head to communicate with the water chamber. The first connector comprises an annular base, a rotary control section, and a connecting section, and the connecting section is connected to an ozone device. The ozone device is connected to the first water outlet head through the first connector and the lateral hole, and with the rotary knob, the water control valve can be switched between the ozone water and tap water quickly and accurately, so as to greatly improve the convenience of use.

Abstract: A water control valve may include a three-way pipe, an inner tube, an outer threaded tube, and a control valve. The three-way pipe integrally formed in T-shape has a water inlet end and a first connecting end which are longitudinally communicated, and a water outlet end communicated with the water inlet end and first connecting end is extended toward the lateral direction, to form the T-shape pipe. A small section's diameter is smaller than the water inlet end, and the bottom portion of the small section comprises an abutting portion, and a first water inlet hole axially penetrates through the abutting portion. One end of the inner tube is top-down inserted through the first connecting end into the small section of the three-way pipe, and a water stop periphery having a diameter larger than the inner tube is formed at the other end of the inner tube.

Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: Described is technology for automatically generating a routing for an integrated circuit (IC) design. Information describing pin-pairs of an integrated circuit (IC) design is received. An initial routing of the IC design is determined by (i) defining connected wires between each pin-pair in the set of pin-pairs, and (ii) evaluating a target resistance for the pin-pair over the connected wires, wherein each connected wire is routed with other connected wires. A resistance adjustment is applied to adjust wire resistance of the connected wires of the initial routing. The resistance adjustment can be based on a square routing in response to a wire resistance being below the target resistance; or the resistance adjustment can be based on a multi-layer stacking in response to the wire resistance being above the target resistance. The routing is provided in patterns as generated by the initial routing and the resistance adjustment.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A vacuum breaker valve may include a valve body, a non-return member, a waterstop, and an abutting member. The valve body has a water inlet end and a water outlet end, and the valve body is connected to a pipe so as the water flows from the water inlet end to the water outlet end. The valve body has a shoulder portion and a stepped portion on the inner wall thereof, and the top surface of the shoulder portion comprises at least a first through hole downwardly penetrating the outer wall of the valve body. The shoulder portion is located below the stepped portion, and the stepped portion is formed in two steps shape, which has a vertical first abutting edge, a horizontal second abutting edge, and a vertical third abutting edge in sequence.

Abstract: Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.

Abstract: A semiconductor device includes a plurality of fin structures disposed over a substrate and a work function alloy layer disposed over each fin structure of the plurality of fin structures. The plurality of fin structures includes a first fin structure and a second fin structure. A content of a first element in a first portion of the work function alloy layer, which portion is disposed over the first fin structure, is different from a content of the first element in a second portion of the work function alloy layer, which portion is disposed over the second fin structure.

Abstract: Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: A method for processing a substrate is provided. The method includes the following operations: placing a substrate over a first injector in a substrate processing apparatus, the substrate having a front surface and a back surface opposite to the front surface, and the front surface having a plurality of concentric regions; adjusting a temperature of each of the plurality of concentric regions by controlling at least one of a flow rate and a temperature associated with a fluid dispensing from the first injector; and rotating the substrate by a spin base disposed below the substrate, the substrate is rotated with respect to a center axis perpendicular to the front surface thereof when adjusting the temperature. The spin base includes a ring opening for rotating relative to the first injector, and the first injector is displaced from a projection of a center of the substrate from a top view perspective.

Abstract: An electrical connector including an insulating body, a metal shielding member disposed in the insulating body, a plurality of terminals disposed in the insulating body, and an outer shell sheathed on the insulating body is provided. The metal shielding member has a leading edge, a pair of side edges bordered at two opposite sides of the leading edge, a protrusion located at the leading edge, and a plurality of openings. The leading and the side edges are protruded out of the insulating body. The openings are located between the leading and the side edges, and are concentrated at positions near the leading edge. Portions of the insulating body penetrate the openings.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.

Abstract: A portable electronic device including a main display having a locking recess at a side edge and at least one external display detachable relative to the side edge of the main display is provided. The external display includes a body, and at least one latch pivoted to the body. The latch is pivoted to the body to be swiveled out of or into the body. An opening of the locking recess faces obliquely upward and faces away from a direction of gravity when the main display is standing, the at least one latch swiveled out of the body faces obliquely downward and faces forward the direction of gravity to be inserted into the locking recess, and the at least one external display is hung on at the side edge of the main display by a weight of the at least one external display.