Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a semiconductor layer over the substrate. The semiconductor layer includes a transition metal chalcogenide. The semiconductor device structure includes a source electrode and a drain electrode over and connected to the semiconductor layer and spaced apart from each other by a gap. The source electrode and the drain electrode are made of graphene.

Abstract: A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

Abstract: An apparatus for manufacturing a semiconductor device includes a holder for holding a carrier and a supporting base for receiving the holder comprising a recess for accommodating a plurality of balls mounted on a surface of the carrier. Furthermore, a method of manufacturing a semiconductor device includes providing a carrier, providing an apparatus comprising a supporting base including a recess, holding the carrier on the supporting base and accommodating a plurality of balls mounted on a surface of the carrier in the recess.

Abstract: The present disclosure relates to an integrated chip package having a plurality of different adhesive layers that provide for a low lid induced stress good warpage control of a substrate and/or IC die, and an associated method of formation. The integrated chip package has an integrated chip (IC) die coupled to an underlying substrate by an electrically conductive interconnect structure. A first adhesive layer, having a first Young's modulus, is disposed onto the substrate at a first plurality of positions surrounding the IC die. A second adhesive layer, having a second Young's modulus different than the first Young's modulus, is disposed onto the substrate at a second plurality of positions surrounding the IC die. A lid is affixed to the substrate by the first and second adhesive layers and extends to a position overlying the IC die.

Abstract: Some embodiments of the present disclosure provide a method of manufacturing a device. The method includes providing a carrier, the carrier including a top surface, covering a portion of the top surface with a plurality of active dies, disposing a protrudent band over a periphery of the carrier, wherein the protrudent band includes a rim shaped along the contour of the carrier, and forming a molding compound over the carrier to cover the plurality of active dies. A method for determining a width of the protrudent band of a device described herein is also provided.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: Chip packages and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a chip package includes: stacking a second chip on a first chip, wherein a first interconnect including a support structure and a bonding structure is disposed between the first chip and the second chip; bonding the first chip and the second chip via a thermal process applied to the bonding structure of the first interconnect; stacking a third chip on the second chip, wherein a second interconnect including a support structure and a bonding structure is disposed between the second chip and the third chip; bonding the second chip and the third chip via the thermal process applied to the bonding structure of the second interconnect; and reflowing the bond between the first and second chips and simultaneously reflowing the bond between the second and third chips.

Abstract: A method of manufacturing a WLP semiconductor structure includes several operations. One of the operations is providing a carrier and the carrier includes a top surface. One of the operations is covering a portion of the top surface with a plurality of active dies. One of the operations is disposing a protrudent band on a periphery of the carrier, wherein the protrudent band includes a rim shaped along the contour of the carrier. One of the operations is forming a molding compound on the carrier to cover the plurality of active dies.

Abstract: A semiconductor device includes a carrier, a die including a first surface and a second surface, a plurality of first conductive bumps disposed between the second surface of the carrier and the die, wherein the die is flip bonded on the carrier, and a molding disposed over the carrier and surrounding the die, wherein the molding includes a recessed portion disposed on the first surface of the die thereby leaving a portion of the first surface is uncovered by the molding. Further, a method of manufacturing a semiconductor device includes providing a carrier, flip bonding a die on the carrier, disposing a rubber material on a first surface of the die and within the first surface of the die, and forming a molding surrounding the rubber material and covering the carrier.

Abstract: Disclosed herein is a device having a shaped seal ring comprising a workpiece, the workpiece comprising at least one dielectric layer disposed on a first side of a substrate, a seal ring disposed in the at least one dielectric layer, and at least one groove in the seal ring. A lid is disposed over the workpiece, the workpiece extending into a recess in the lid and a first thermal interface material (TIM) contacts the seal ring and the lid, with the first TIM extending into the at least one groove. The workpiece is mounted to the package carrier. A die is mounted over a first side of workpiece and disposed in the recess. A first underfill a disposed under the die and a second underfill is disposed between the workpiece and the package carrier. The first TIM is disposed between the first underfill and the second underfill.

Abstract: Packaging methods for semiconductor devices, and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes coupling a ring to a substrate, and coupling an integrated circuit die to the substrate within the ring. A molding material is disposed around the integrated circuit die within the ring.

Abstract: A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Abstract: The present disclosure relates to an integrated chip package having a plurality of different adhesive layers that provide for a low lid induced stress good warpage control of a substrate and/or IC die, and an associated method of formation. The integrated chip package has an integrated chip (IC) die coupled to an underlying substrate by an electrically conductive interconnect structure. A first adhesive layer, having a first Young's modulus, is disposed onto the substrate at a first plurality of positions surrounding the IC die. A second adhesive layer, having a second Young's modulus different than the first Young's modulus, is disposed onto the substrate at a second plurality of positions surrounding the IC die. A lid is affixed to the substrate by the first and second adhesive layers and extends to a position overlying the IC die.

Abstract: A semiconductor device includes a carrier, a die including a first surface and a second surface, a plurality of first conductive bumps disposed between the second surface of the carrier and the die, wherein the die is flip bonded on the carrier, and a molding disposed over the carrier and surrounding the die, wherein the molding includes a recessed portion disposed on the first surface of the die thereby leaving a portion of the first surface is uncovered by the molding. Further, a method of manufacturing a semiconductor device includes providing a carrier, flip bonding a die on the carrier, disposing a rubber material on a first surface of the die and within the first surface of the die, and forming a molding surrounding the rubber material and covering the carrier.

Abstract: The present invention provides a method for manufacturing a graphene film and a graphene channel of transistor. The graphene film is prepared at a low temperature by using molecular beam epitaxy technique, and the graphene channel is able to fit into a transistor. The excellent characteristic of current modulation within graphene transistors is observed.

Abstract: A method of manufacturing a WLP semiconductor structure includes several operations. One of the operations is providing a carrier and the carrier includes a top surface. One of the operations is covering a portion of the top surface with a plurality of active dies. One of the operations is disposing a protrudent band on a periphery of the carrier, wherein the protrudent band includes a rim shaped along the contour of the carrier. One of the operations is forming a molding compound on the carrier to cover the plurality of active dies.

Abstract: An apparatus for manufacturing a semiconductor device includes a holder for holding a carrier and a supporting base for receiving the holder comprising a recess for accommodating a plurality of balls mounted on a surface of the carrier. Furthermore, a method of manufacturing a semiconductor device includes providing a carrier, providing an apparatus comprising a supporting base including a recess, holding the carrier on the supporting base and accommodating a plurality of balls mounted on a surface of the carrier in the recess.

Abstract: The present invention provides a method for manufacturing a graphene film and a graphene channel of transistor. The graphene film is prepared at a low temperature by using molecular beam epitaxy technique, and the graphene channel is able to fit into a transistor. The excellent characteristic of current modulation within graphene transistors is observed.