Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

Abstract: Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described in combination with stacked technology with CMOS ASIC wafters. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. Stacking technology can be used to address incompatibility of ReRAM processing and CMOS ASICs processing.

Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: The present invention discloses an automatic cement plastering and rendering system configured on a machine with a slurry supply apparatus and a robot, wherein the system comprises at least one image capture device, a storage, and a processor. Said processer is coupled to the at least one image capture device and the storage, and communicatively connected with the machine.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: An indirect operating system is suitable for a mobile electronic device to remotely operate a controlled device, and allows the mobile electronic device, after scanning a device barcode of the controlled device, to obtain a corresponding set of user operation pages from a background device and display it on a remote control interface shown by the mobile electronic device, and then, the mobile electronic device converts the user's operation on the user operation page(s) into a control barcode or a driving packet with identification information of the controlled device. Through the driving packet or control barcode, the controlled device can obtain the user's input information and operate according to the input information.

Abstract: Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

Abstract: A system enables a content creator to upload the content onto the server and set rules and conditions for the access and retrieval. The content is downloaded to a portable storage medium, the content will be encrypted for display at a particular destination device. When the content is loaded on the destination device, the destination device will check if the content is loaded on the correct destination device by checking the information of the destination device attached to the content against the device information stored on the destination device.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors/photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract: A system enables a content creator to upload the content onto the server and set rules and conditions for the access and retrieval. The content is downloaded to a portable storage medium, the content will be encrypted for display at a particular destination device. When the content is loaded on the destination device, the destination device will check if the content is loaded on the correct destination device by checking the information of the destination device attached to the content against the device information stored on the destination device.

Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.