Patents by Inventor Shih-Yuan Wang

Shih-Yuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210367043
    Abstract: Vertical interconnect structures and methods of forming are provided. The vertical interconnect structures may be formed by partially filling a first opening through one or more dielectric layers with layers of conductive materials. A second opening is formed in a dielectric layer such that a depth of the first opening after partially filling with the layers of conductive materials is close to a depth of the second opening. The remaining portion of the first opening and the second opening may then be simultaneously filled.
    Type: Application
    Filed: August 3, 2021
    Publication date: November 25, 2021
    Inventors: Po-Yu Huang, Shih-Che Lin, Chao-Hsun Wang, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Rueijer Lin, Chen-Yuan Kao
  • Publication number: 20210365540
    Abstract: A system enables a content creator to upload the content onto the server and set rules and conditions for the access and retrieval. The content is downloaded to a portable storage medium, the content will be encrypted for display at a particular destination device. When the content is loaded on the destination device, the destination device will check if the content is loaded on the correct destination device by checking the information of the destination device attached to the content against the device information stored on the destination device.
    Type: Application
    Filed: May 21, 2020
    Publication date: November 25, 2021
    Inventor: Shih-Yuan Wang
  • Patent number: 11164880
    Abstract: A multi-time programming non-volatile memory includes a select transistor, a floating gate transistor, a switch transistor, a capacitor and an erase gate element. The select transistor is connected with a select line and a source line. The floating gate transistor includes a floating gate. The floating gate transistor is connected with the select transistor. The switch transistor is connected with a word line, the floating gate transistor and a bit line. A first terminal of the capacitor is connected with the floating gate. A second terminal of the capacitor is connected with a control line. The erase gate element includes the floating gate, a gate oxide layer and a p-type region. The erase gate element is connected with an erase line. The floating gate of the erase gate element at least includes an n-type floating gate part.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: November 2, 2021
    Assignee: EMEMORY TECHNOLOGY INC.
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching, Chih-Hsin Chen, Wei-Ren Chen
  • Publication number: 20210287746
    Abstract: A memory cell array of a multi-time programmable non-volatile memory includes plural memory cells. The memory cell has the structure of 1T1C cell, 2T1C cell or 3T1C cell. Moreover, the floating gate transistors of the memory cells in different rows of the memory cell array are constructed in the same well region. Consequently, the chip size is reduced. Moreover, by providing proper bias voltages to the memory cell array, the program action, the erase action or the read action can be performed normally.
    Type: Application
    Filed: February 24, 2021
    Publication date: September 16, 2021
    Inventors: Chih-Hsin CHEN, Chun-Yuan LO, Shih-Chen WANG, Tsung-Mu LAI
  • Patent number: 11121271
    Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: September 14, 2021
    Assignee: W&WSens, Devices, Inc.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Patent number: 11107896
    Abstract: Vertical interconnect structures and methods of forming are provided. The vertical interconnect structures may be formed by partially filling a first opening through one or more dielectric layers with layers of conductive materials. A second opening is formed in a dielectric layer such that a depth of the first opening after partially filling with the layers of conductive materials is close to a depth of the second opening. The remaining portion of the first opening and the second opening may then be simultaneously filled.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: August 31, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Yu Huang, Shih-Che Lin, Chao-Hsun Wang, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Rueijer Lin, Chen-Yuan Kao
  • Publication number: 20210242354
    Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Application
    Filed: February 23, 2021
    Publication date: August 5, 2021
    Inventors: Shih-Yuan WANG, Shih-Ping Wang
  • Patent number: 10756266
    Abstract: Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: August 25, 2020
    Assignee: WWRAM DEVICES, INC.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Patent number: 10700225
    Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: June 30, 2020
    Assignee: W&WSENS DEVICES, INC.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Patent number: 10622498
    Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: April 14, 2020
    Assignee: W&WSENS DEVICES, INC.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Publication number: 20200028000
    Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Application
    Filed: August 1, 2019
    Publication date: January 23, 2020
    Applicant: W&Wsens Devices, Inc.
    Inventors: Shih-Yuan WANG, Shih-Ping WANG
  • Publication number: 20200006650
    Abstract: Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer.
    Type: Application
    Filed: August 9, 2019
    Publication date: January 2, 2020
    Applicant: W&Wram Devices, Inc.
    Inventors: Shih-Yuan WANG, Shih-Ping WANG
  • Patent number: 10511386
    Abstract: Examples include generating a signal using a modulatable source. The signal may be propagated using a multi-mode fiber to receive the signal from the modulatable source. The fiber has a diameter d and a far-field divergence angle associated with the propagated signal that corresponds to a product of the diameter (d) and the far-field divergence angle. The product may be substantially between 1 micron radian and 4 micron radian. In some examples, the propagated signal may be received at a receiver from the multi-mode fiber.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: December 17, 2019
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Wayne V. Sorin, Michael Renne Ty Tan, Shih-Yuan Wang
  • Patent number: 10503303
    Abstract: An uninterrupted learning uses a touch screen display device when connections to networks are unavailable or unstable. The touch screen display device is equipped with short range and long range communication capabilities in addition of capable being a WiFi hotspot. The touch screen display device incorporates the features of both the adaptive server and the teacher device. The adaptive server feature in the touch screen display device can communicate with a remote server through a local area network and switch to a cellular telecommunication network when the local area network is unavailable. The adaptive server can also act as the WiFi base station and accept connections from nearby student devices.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: December 10, 2019
    Assignee: Equalearning Corp.
    Inventor: Shih-Yuan Wang
  • Patent number: 10468543
    Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: November 5, 2019
    Assignee: W&Wsens Devices, Inc.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam
  • Patent number: 10446700
    Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: October 15, 2019
    Assignee: W&Wsens Devices, Inc.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam
  • Publication number: 20190288132
    Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Application
    Filed: March 8, 2019
    Publication date: September 19, 2019
    Inventors: Shih-Yuan WANG, Shih-Ping WANG, M. Saif ISLAM
  • Patent number: 10381557
    Abstract: Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. The contact can be avoided by cladding the switching layer in a material such as silicon or using electrodes that may contain metal but have regions that are adjacent the switching layer and lack free metal ions except for possible trace amounts.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: August 13, 2019
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Publication number: 20190087045
    Abstract: An uninterrupted learning uses a touch screen display device when connections to networks are unavailable or unstable. The touch screen display device is equipped with short range and long range communication capabilities in addition of capable being a WiFi hotspot. The touch screen display device incorporates the features of both the adaptive server and the teacher device. The adaptive server feature in the touch screen display device can communicate with a remote server through a local area network and switch to a cellular telecommunication network when the local area network is unavailable. The adaptive server can also act as the WiFi base station and accept connections from nearby student devices.
    Type: Application
    Filed: November 20, 2018
    Publication date: March 21, 2019
    Inventor: Shih-Yuan Wang
  • Patent number: 10222336
    Abstract: A system includes an illumination source, a detector and a processor. The detector acquires spectral measurements of a sample under test under at least one varying condition. The processor processes the measurements to generate at least one spectral representation that includes Raman spectra and at least one spectral representation that includes non-Raman spectra.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: March 5, 2019
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Huei Pei Kuo, Zhiyong Li, Shih-Yuan Wang, Alexandre M Bratkovski, Steven Barcelo, Ansoon Kim, Gary Gibson, Mineo Yamakawa