Abstract: A battery detection circuit and a battery detection method are provided. The battery detection circuit includes battery gauge circuits and a processing circuit. The battery gauge circuits read battery information of batteries, and the battery information at least includes a current battery capacity, a current temperature and a current cell voltage. The processing circuit receives and processes the battery information, and performs: determining whether a battery temperature of any one of the batteries is greater than a designated temperature; if negative, determining whether the current cell voltage of any one of the batteries is lower than a designated voltage, and if affirmative, adjusting the corresponding current battery capacity to generate a reported battery capacity.

Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.

Abstract: A battery safety management procedure applicable to a battery safety management system is provided. The battery safety management system includes a controller, storage, and battery. The battery safety management procedure is stored in the storage and executed by the controller to perform steps of: determining whether a power level of the battery is greater than or equal to a power level threshold and determining whether a power storage time is greater than or equal to a time threshold; and performing a discharging procedure when the power level of the battery is greater than or equal to the power level threshold, and the power storage time is greater than or equal to the time threshold. Time control and power level control prevents the battery from being in a prolonged state of high power level to reduce the chance of battery swelling, leaks, abnormalities, and damage, thereby extending battery service life.

Abstract: A person-detection device that automatically configures itself as a motion sensor or an occupancy sensor upon receiving a command from a home security panel or home automation hub.

Abstract: An electronic device includes a system circuit, a power connector, a path selection circuit, a plurality of battery connectors, a plurality of series circuits, and a control circuit. The power connector is suitable for receiving power. The path selection circuit is coupled to the system circuit and the power connector. The battery connectors are respectively suitable for coupling a plurality of batteries. The series circuits respectively correspond to the battery connectors, and each series circuit is connected between the corresponding battery connector and the path selection circuit. Each series circuit includes: a charging switch, a battery switch and a discharging path. In a sequential discharge mode, the control circuit controls the series circuits to turn on the battery switch thereof in turn and controls the path selection circuit to connect the series circuits to the system circuit. The remaining battery switches and all charging switches remain off.

Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: A charging method includes detecting whether two battery modules are balanced, simultaneously charging the two battery modules by a first charging current when the two battery modules are balanced, and executing a specific charging procedure when the two battery modules are not balanced. The step of executing the specific charging procedure includes charging by the first charging current a first battery module between the two battery modules that is not balanced and disconnecting the other between the two battery modules, and simultaneously charging the two battery modules by a second charging current upon the first battery module reaching balance, wherein the second charging current is less than the first charging current.

Abstract: A method and apparatus for determining a status of a deadbolt assembly. A deadbolt status assembly uses mechanical, ultrasonic, infrared, inductance, and/or capacitance to detect when a deadbolt assembly is in a locked state, where a bolt of the deadbolt assembly is fully extended, or in an unlocked state, where the bolt is fully retracted.

Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A method and apparatus for determining a status of a deadbolt assembly. A deadbolt status assembly uses mechanical, ultrasonic, infrared, inductance, and/or capacitance to detect when a deadbolt assembly is in a locked state, where a bolt of the deadbolt assembly is fully extended, or in an unlocked state, where the bolt is fully retracted.

Abstract: A person-detection device that automatically configures itself as a motion sensor or an occupancy sensor upon receiving a command from a home security panel or home automation hub.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer and first conductive metal layer on the first polysilicon plug; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in the first ILD layer and second conductive metal layer on the second polysilicon plug.

Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.

Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.

Abstract: A battery safety management procedure applicable to a battery safety management system is provided. The battery safety management system includes a controller, storage, and battery. The battery safety management procedure is stored in the storage and executed by the controller to perform steps of: determining whether a power level of the battery is greater than or equal to a power level threshold and determining whether a power storage time is greater than or equal to a time threshold; and performing a discharging procedure when the power level of the battery is greater than or equal to the power level threshold, and the power storage time is greater than or equal to the time threshold. Time control and power level control prevents the battery from being in a prolonged state of high power level to reduce the chance of battery swelling, leaks, abnormalities, and damage, thereby extending battery service life.

Abstract: An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer and first conductive metal layer on the first polysilicon plug; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in the first ILD layer and second conductive metal layer on the second polysilicon plug.

Abstract: A device combining positioning and injection systems for injection within a body cavity, comprises: a tubular housing surrounding an accommodating space and having an opening hole fluidly connected to the accommodating space; a curved channel fluidly connected to the accommodating space and the opening hole; an injection needle disposed inside the accommodating space and the curved channel; the injection needle having a piercing portion penetrating through the opening hole and configured to extend outward from or retract inward into the opening hole; a plurality of ultrasonic transducers installed at the tubular housing and at two opposite sides of the opening hole; wherein at least one of the ultrasonic transducers being used to transmit a detection signal, and at least one of the ultrasonic transducers being used to receive the detection signal; a monitoring unit connected to the ultrasonic transducers via a transmission unit for information transmission therebetween.

Abstract: An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer, first self-aligned silicide layer on the polysilicon plug and first conductive metal layer on the first self-aligned silicide layer; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in first ILD layer, second self-aligned silicide layer on the second polysilicon plug, and second conductive metal layer on the second self-aligned silicide layer.