Patents by Inventor Shing Chen

Shing Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9490360
    Abstract: Provided is a semiconductor device including a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate and an N-type deep well region. The first well region is in the substrate. The second well region is in the substrate proximate to the first well region. The gate is on the substrate and covers a portion of the first well region and a portion of the second well region. The source region is in the first well region at one side of the gate. The drain region is in the second well region at another side of the gate. The dummy gate is on the substrate between the gate and the drain region. The deep well region is in the substrate and surrounds the first and second well regions. An operation method of the semiconductor device is further provided.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: November 8, 2016
    Assignee: United Microelectronics Corp.
    Inventors: Ming-Shing Chen, Ming-Hui Chang, Wei-Ting Wu, Ying-Chou Lai, Horng-Nan Chern, Chorng-Lih Young, Chin-Sheng Yang
  • Patent number: 9478457
    Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited to cover the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removed by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate is selectively removed.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: October 25, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Ming-Shing Chen, Yu-Ting Wang, Ming-Hui Chang
  • Patent number: 9461166
    Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: October 4, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Shing Chen, Wei-Ting Wu, Ming-Hui Chang, Chao-Chun Ning
  • Patent number: 9445996
    Abstract: Methods and compositions are provided for generating and applying long-lasting therapeutic nitric oxide (NO) gas from the reaction of a least one microencapsulated nitrite salt and an activating volume of an aqueous acidified gel that has sufficient acidity to convert the nitrite salt to a nitric oxide (NO) and further provides a reducing property that retains the NO in bioactive form.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: September 20, 2016
    Assignee: NIOXX LLC
    Inventors: Cheng-Shing Chen, Ferid Murad, Kenneth A Smith, William A Seitz, William J Merrell, Alexandru T Balaban
  • Publication number: 20160263628
    Abstract: A cleaning device for a rotary tubular object includes a reactor into which the rotary tubular object to be cleaned is inserted, a water tank containing clear water, and a centralized ultrasonic system for cooperating with the water tank to ultrasonically clean a section of the rotary tubular object to be cleaned which is located in the reactor. The centralized ultrasonic system is inserted into the reactor. The water tank is intercommunicated with a water inlet of the reactor through a flexible pipe. Water outlets of the reactor are located above the water tank. A water pump connected with the flexible pipe is arranged in the water tank. The present invention adopts the clear water to serve as a cleanser, and, after cooperating with the ultrasonic system, continuously ultrasonically cleans the rotary tubular object section by section. During cleaning, no chemical agent is applied.
    Type: Application
    Filed: May 18, 2016
    Publication date: September 15, 2016
    Inventor: Shing Chen
  • Patent number: 9385236
    Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The fin shaped structures are disposed in a substrate, where at least one of the fin shaped structures has a tipped end. The dummy gate structure is disposed on the substrate, and includes an extending portion covering the tipped end.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: July 5, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Ying Sun, En-Chiuan Liou, Ming-Shing Chen, Yu-Cheng Tung, Chih-Wei Yang
  • Patent number: 9379237
    Abstract: A LDMOS includes a gate structure disposed on the surface of a semiconductor substrate, a source region having a first conductivity type, a drain region having the first conductivity type, an isolation region surrounding the source/drain regions, a doped region having a second conductivity type, and a base region having the second conductivity type formed in the doped region. The source/drain regions are respectively disposed on two sides of the gate structure. The doped region surrounds the isolation region, and the bottom of the doped region is deeper than the bottom of the isolation region. The base region is disposed at the surface of the semiconductor substrate.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: June 28, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Hui Chang, Wei-Ting Wu, Ming-Shing Chen
  • Publication number: 20160168358
    Abstract: A modified polyester resin composition comprises a combination of a PET polyester, a PCT polyester, a CHDM modified copolyester comprising PCTA, PCTG or PETG, and a modified polymer at least comprising TPU or EPDM, wherein the modified polymer accounts for 3-25 wt % and the rest accounts for 97-75 wt %, based on the total weight of the resin; and the modified polyester resin composition is suited for use in a halogen-free, heavy metal-free, and volatile organic compound-free polyester-based plastic floor tile excellent in higher resistance to wear and tear, better tensile strength, more preferable resistance to both lit cigarette e and solvents, and particularly being friendliness to environment and not hazardous to health.
    Type: Application
    Filed: December 3, 2015
    Publication date: June 16, 2016
    Inventors: Dein-Run FUNG, Ying-Te HUANG, Chun-Lai CHEN, Tzai-Shing CHEN
  • Patent number: 9340442
    Abstract: A method and an apparatus for hydrolyzing an organic solid are described. The method includes mixing an organic solid and a nanobubble water having a plurality of nanobubbles, to form an organic liquid, in which the nanobubbles contain a combustible gas; and applying an ultrasonic wave on the organic liquid, such that the nanobubbles generate an additional cavitation effect. A preprocessor is applicable to an organic solid processing system having an anaerobic digestion tank, in which the anaerobic digestion tank has anaerobic microbes for generating a combustible gas. The preprocessor includes a nanobubble water generator, a digestion tank, and an ultrasonic wave generator. With the method and the structure, the nanobubbles are used to increase the probability of generation of the additional cavitation effect, and the combustible gas is used to improve an impact force of bursts produced by the cavitation effect.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: May 17, 2016
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shing-Der Chen, Chen-Hua Chu, Wang-Kuan Chang, Shing Chen, Teh-Ming Liang, Shan-Shan Chou
  • Publication number: 20160086843
    Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited to cover the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removed by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate is selectively removed.
    Type: Application
    Filed: December 2, 2015
    Publication date: March 24, 2016
    Applicant: UNITED MICROELECTRONICS CORPORATION
    Inventors: Ming-Shing Chen, Yu-Ting Wang, Ming-Hui Chang
  • Patent number: 9262097
    Abstract: Described herein is a system and method for high speed non-volatile random access memory (NVRAM) emulation. The system and method may utilize a primary storage device and a volatile random access memory (RAM) device to emulate NVRAM functionality. The system and method may allocate a range of the primary storage device. The storage capacity or size of the allocated range may correspond or be at least partially based on a storage capacity or size of the volatile RAM device. Data, such as write requests, may be migrated from the primary storage device to the volatile RAM device. In the event of the unavailability, loss of power, or other such circumstances of the volatile RAM device, data from the volatile RAM device may be migrated back to the previously allocated range of the primary storage device.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: February 16, 2016
    Assignee: NetApp, Inc.
    Inventor: Jyh-shing Chen
  • Publication number: 20160022878
    Abstract: The invention relates to a method of treating pleural abnormalities in a subject in need thereof, comprising the steps of: (a) attaching a biodegradable polymeric membrane onto a pleural wound to elicit fibronectin from fibroblasts to cause fibrous adhesion; and (b) securing the membrane with securement products, including sutures, staples, and sealants. The present invention also relates to a biodegradable adhesion membrane used for treating pleural abnormalities, comprising: a biodegradable base material selected from the group consisting of polycaprolactone (PCL), polylactic acid or polylactide (PLA), polyhydroxybutyrate (PHB), poly(ethylene adipate), poly(butylene adipate) (PBA), chitosan, hyaluronic acid, and polyglycolic acid (PGA); wherein the thickness of the membrane is 0.1-1 mm.
    Type: Application
    Filed: July 22, 2015
    Publication date: January 28, 2016
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Tai-Horng Young, Jin-Shing Chen, Hong-Shiee Lai, Ke-Cheng Chen, Ya-Shuan Chou, Yong-Chong Lin, Hao-Ying Hsieh, Hsu-Hsien Chang
  • Publication number: 20160027683
    Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method include steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited covering the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removing by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate selectively is removed.
    Type: Application
    Filed: August 12, 2014
    Publication date: January 28, 2016
    Applicant: UNITED MICROELECTRONICS CORPORATION
    Inventors: Ming-Shing Chen, Yu-Ting Wang, Ming-Hui Chang
  • Publication number: 20160009584
    Abstract: A method and an apparatus for hydrolyzing an organic solid are described. The method includes mixing an organic solid and a nanobubble water having a plurality of nanobubbles, to form an organic liquid, in which the nanobubbles contain a combustible gas; and applying an ultrasonic wave on the organic liquid, such that the nanobubbles generate an additional cavitation effect. A preprocessor is applicable to an organic solid processing system having an anaerobic digestion tank, in which the anaerobic digestion tank has anaerobic microbes for generating a combustible gas. The preprocessor includes a nanobubble water generator, a digestion tank, and an ultrasonic wave generator. With the method and the structure, the nanobubbles are used to increase the probability of generation of the additional cavitation effect, and the combustible gas is used to improve an impact force of bursts produced by the cavitation effect.
    Type: Application
    Filed: September 18, 2015
    Publication date: January 14, 2016
    Inventors: Shing-Der CHEN, Chen-Hua CHU, Wang-Kuan CHANG, Shing CHEN, Teh-Ming LIANG, Shan-Shan CHOU
  • Patent number: 9236289
    Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method include steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited covering the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removing by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate selectively is removed.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: January 12, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Ming-Shing Chen, Yu-Ting Wang, Ming-Hui Chang
  • Patent number: 9169135
    Abstract: A method and an apparatus for hydrolyzing an organic solid are described. The method includes mixing an organic solid and a nanobubble water having a plurality of nanobubbles, to form an organic liquid, in which the nanobubbles contain a combustible gas; and applying an ultrasonic wave on the organic liquid, such that the nanobubbles generate an additional cavitation effect. A preprocessor is applicable to an organic solid processing system having an anaerobic digestion tank, in which the anaerobic digestion tank has anaerobic microbes for generating a combustible gas. The preprocessor includes a nanobubble water generator, a digestion tank, and an ultrasonic wave generator. With the method and the structure, the nanobubbles are used to increase the probability of generation of the additional cavitation effect, and the combustible gas is used to improve an impact force of bursts produced by the cavitation effect.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: October 27, 2015
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shing Der Chen, Chen Hua Chu, Wang Kuan Chang, Shing Chen, Teh Ming Liang, Shan Shan Chou
  • Patent number: 9155678
    Abstract: The present disclosure discloses an apparatus of cardiopulmonary resuscitator that is operated through a driving mechanism controlled and driven by air power. The driving mechanism functions to actuate a belt adapted to extend around a chest of a patient to generate reciprocating movement of pressing and releasing so as to achieve a purpose of cardiopulmonary resuscitation for recovering heartbeat and breathing of the patent.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: October 13, 2015
    Assignees: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, KING DESIGN INDUSTRIAL CO. LTD.
    Inventors: Chan-Hsiao Ho, Chih-Chung Chou, Teng-Chun Wu, Bor-Nian Chuang, Shing Chen
  • Patent number: 9150718
    Abstract: A weather-resistant crosslinked polyolefin composition is a novel formula containing a comprehensive mixture constituted by crosslinking agent, antistatic agent, TiO2 sized in nanometer and TiO2 sized in micrometer and essential components including polyolefin composition resin, lubricant auxiliary crosslinking agent, antioxidant, UV absorber and filler etc; this novel formula is particularly suited to produce a weather-resistant crosslinked polyolefin sheet with a calender machine instead of an extruder conventionally used, and the polyolefin sheets produced thereof are excellent in both heat-resistant and weather-resistant as well as in a high-quality sheet surface and capably made at a high yield rate through the calender machine.
    Type: Grant
    Filed: April 2, 2013
    Date of Patent: October 6, 2015
    Assignee: Nan Ya Plastics Corporation
    Inventors: Dein-Run Fung, Ying-Te Huang, Chao-Hsien Lin, Ching-Yao Yuan, Tzai-Shing Chen
  • Publication number: 20150270467
    Abstract: A thermoelectric element includes a first subelement and a second subelement. The first subelement includes three main ingredients: a charge generation material made of organic or organic metal pigment or dye, an organic hole transport material, and a binder. A second subelement is superimposed on the first subelement and includes three main ingredients: a charge generation material made of organic or organic metal pigment or dye, an organic electron transport material, and a binder.
    Type: Application
    Filed: March 13, 2015
    Publication date: September 24, 2015
    Inventors: Shih-Jue Lin, Yao-Shing Chen
  • Publication number: 20150236150
    Abstract: Provided is a semiconductor device including a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate and an N-type deep well region. The first well region is in the substrate. The second well region is in the substrate proximate to the first well region. The gate is on the substrate and covers a portion of the first well region and a portion of the second well region. The source region is in the first well region at one side of the gate. The drain region is in the second well region at another side of the gate. The dummy gate is on the substrate between the gate and the drain region. The deep well region is in the substrate and surrounds the first and second well regions. An operation method of the semiconductor device is further provided.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 20, 2015
    Applicant: United Microelectronics Corp.
    Inventors: Ming-Shing Chen, Ming-Hui Chang, Wei-Ting Wu, Ying-Chou Lai, Horng-Nan Chern, Chorng-Lih Young, Chin-Sheng Yang