Patents by Inventor Shing Chen

Shing Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200134810
    Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.
    Type: Application
    Filed: February 26, 2019
    Publication date: April 30, 2020
    Inventors: PEI-HSUAN LEE, CHIEN-HSIANG HUANG, KUANG-SHING CHEN, KUAN-HSIN CHEN, CHUN-CHIEH CHIN
  • Patent number: 10636671
    Abstract: A planarization process includes the following steps. A first dielectric layer and a second dielectric layer are sequentially formed to conformally cover a pattern in a cell area and a substrate in the cell area and an isolation area, thereby the first dielectric layer and the second dielectric layer having a dishing in the isolation area. A dummy material is formed in the dishing and exposes a part of the second dielectric layer right above the pattern. A first removing process is performed to remove the exposed part of the second dielectric layer. The dummy material is removed. A second removing process is performed to remove an exposed part of the first dielectric layer by using the second dielectric layer as an etch stop layer. A third removing process is performed to remove the second dielectric layer and the first dielectric layer.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: April 28, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventor: Ming-Shing Chen
  • Publication number: 20200095555
    Abstract: A method of circulating tumor cells isolation, using an isolating cultural system of circulating tumor cells, comprises the following steps: (1) providing a sample; (2) adding a cell culture medium to the isolating cultural system of circulating tumor cells; (3) adding the sample to the isolating cultural system of circulating tumor cells to cultivate; and (4) collecting the suspended circulating tumor cells in the cell culture medium; wherein the isolating cultural system of circulating tumor cells comprises a container including a cell adhesion portion, and cellulose coated on the cell adhesion portion.
    Type: Application
    Filed: September 4, 2019
    Publication date: March 26, 2020
    Inventors: TAI-HORNG YOUNG, WAN-CHEN HUANG, HAO-YING HSIEH, SHYH-CHYI LO, KE-CHENG CHEN, Jin-Shing Chen, YIN-TZU CHEN
  • Publication number: 20190322824
    Abstract: A transparent polyester film has low visible light transmittance of 5-50% by JIS K7705 testing standard and a high infrared-blocking rate of at least 90% by JIS R3106 testing standard, which is extruded from a kind of polyester resins obtained from 5-40 wt % of nanoparticle-based thermal insulation slurry and/or 0.005-0.1 wt % of nanoparticle-based black pigment slurry by weight of and to react with the polymerization materials to completely perform an esterification and a polycondensation, wherein the thermal insulation nanoparticle has a chemical formula of CsXNYWO3-ZClC with an average particle size of 10-90 nm and the nanoparticle-based black contains carbon black particles having a particle size of 20-80 nm.
    Type: Application
    Filed: July 4, 2019
    Publication date: October 24, 2019
    Inventors: TE-CHAO LIAO, CHUN-CHE TSAO, CHIA-HO CHENG, TZAI-SHING CHEN
  • Publication number: 20190318471
    Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.
    Type: Application
    Filed: August 29, 2018
    Publication date: October 17, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Huei Chen, Pei-Chao Su, Xiaomeng Chen, Chan-Ming Chang, Shih-Yung Chen, Hung-Yi Chung, Kuang-Shing Chen, Li-Jou Lee, Yung-Cheng Lin, Wei-Chen Wu, Shih-Chang Wang, Chien-An Lin
  • Patent number: 10435526
    Abstract: A transparent polyester film has low visible light transmittance of 5-50% by JIS K7705 testing standard and a high infrared-blocking rate of at least 90% by JIS R3106 testing standard, which is extruded from a kind of polyester resins obtained from 5-40 wt % of nanoparticle-based thermal insulation slurry and/or 0.005-0.1 wt % of nanoparticle-based black pigment slurry by weight of and to react with the polymerization materials to completely perform an esterification and a polycondensation, wherein the thermal insulation nanoparticle has a chemical formula of CsXNYWO3-ZClC with an average particle size of 10-90 nm and the nanoparticle-based black contains carbon black particles having a particle size of 20-80 nm.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: October 8, 2019
    Assignee: NAN YA PLASTICS CORPORATION
    Inventors: Te-Chao Liao, Chun-Che Tsao, Chia-Ho Cheng, Tzai-Shing Chen
  • Publication number: 20190115629
    Abstract: A charging method includes calculating a remained lifetime of a battery unit based on a health state and a battery temperature of the battery unit, charging the battery unit by a charging voltage with a first potential when the remained lifetime is higher than a lifetime threshold, and charging the battery unit by the charging voltage with a second potential when the remained lifetime is smaller than or equal to the lifetime threshold.
    Type: Application
    Filed: March 6, 2018
    Publication date: April 18, 2019
    Inventor: Li-Shing Chen
  • Publication number: 20190105272
    Abstract: Disclosed are a method and an appliance for extending the production of nitric oxide by microencapsulated spinach extract powder and acidic gel. The appliance includes a microencapsulated spinach extract acting as a nitric oxide donor, and an acidic gel having a sufficient acidity to transform the spinach extract into nitric oxide. The method and appliance for extending the production of nitric oxide by spinach extract microencapsulated powder and acidic gel can release NO for a long time and provide a long-term effect to the affected position.
    Type: Application
    Filed: October 11, 2017
    Publication date: April 11, 2019
    Inventor: CHENG SHING CHEN
  • Patent number: 10219794
    Abstract: The invention relates to a method of treating pleural abnormalities in a subject in need thereof, comprising the steps of: (a) attaching a biodegradable polymeric membrane onto a pleural wound to elicit fibronectin from fibroblasts to cause fibrous adhesion; and (b) securing the membrane with securement products, including sutures, staples, and sealants. The present invention also relates to a biodegradable adhesion membrane used for treating pleural abnormalities, comprising: a biodegradable base material selected from the group consisting of polycaprolactone (PCL), polylactic acid or polylactide (PLA), polyhydroxybutyrate (PHB), poly(ethylene adipate), poly(butylene adipate) (PBA), chitosan, hyaluronic acid, and polyglycolic acid (PGA); wherein the thickness of the membrane is 0.1-1 mm.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: March 5, 2019
    Assignee: National Taiwan University
    Inventors: Tai-Horng Young, Jin-Shing Chen, Hong-Shiee Lai, Ke-Cheng Chen, Ya-Shuan Chou, Yong-Chong Lin, Hao-Ying Hsieh, Hsu-Hsien Chang
  • Patent number: 10134744
    Abstract: A semiconductor memory device includes a first inverter, a second inverter, a first and second inner access transistors, and a first and second outer access transistors. The first inverter includes a first pull-up transistor and a first pull-down transistor, the second inverter includes a second pull-up transistor (PL2) and a second pull-down transistor, and the first inverter and the second inverter forms a latch circuit. The first and second inner access transistors and the first and second outer access transistors are electrically connected to the latch circuit, and channel widths of the second inner access transistor and the second outer access transistor are different from each other.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: November 20, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Han Chen, Wei-Chi Chen, Ching Chang, Ming-Shing Chen, Chao-Hsien Wu, Chia-Hui Hwang, Lu-Ran Huang
  • Patent number: 10079441
    Abstract: A fixing structure of electronic components has a first substrate, at least one second substrate, at least one electronic component, and at least one fixing mechanism. Each second substrate has at least two first pins to electrically connect to the first substrate. Multiple second pins formed on a side surface of the electronic component are electrically connected to the second substrate. The at least one fixing mechanism covers the at least one electronic component and the at least one second substrate. A first mounting part and a second mounting part respectively extend downward from opposite sides of the at least one fixing mechanism for clamping the electronic component and the second substrate so that the at least one electronic component and the at least one second substrate are erectly mounted on the first substrate. Thus, more electronic components are allowed to be erectly mounted on the first substrate.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: September 18, 2018
    Assignee: JIANGYIN SINBON ELECTRONICS CO., LTD.
    Inventors: Jen-Shing Chen, Xue Feng Zhang, Jian Zhou
  • Publication number: 20180166805
    Abstract: A fixing structure of electronic components has a first substrate, at least one second substrate, at least one electronic component, and at least one fixing mechanism. Each second substrate has at least two first pins to electrically connect to the first substrate. Multiple second pins formed on a side surface of the electronic component are electrically connected to the second substrate. The at least one fixing mechanism covers the at least one electronic component and the at least one second substrate. A first mounting part and a second mounting part respectively extend downward from opposite sides of the at least one fixing mechanism for clamping the electronic component and the second substrate so that the at least one electronic component and the at least one second substrate are erectly mounted on the first substrate. Thus, more electronic components are allowed to be erectly mounted on the first substrate.
    Type: Application
    Filed: February 27, 2017
    Publication date: June 14, 2018
    Applicant: JIANGYIN SINBON ELECTRONICS CO., LTD.
    Inventors: Jen-Shing CHEN, Xue Feng ZHANG, Jian ZHOU
  • Publication number: 20180155531
    Abstract: A modified polyester resin composition comprises a combination of a PET polyester, a PCT polyester, a CHDM modified copolyester comprising PCTA, PCTG or PETG, and a modified polymer at least comprising TPU or EPDM, wherein the modified polymer accounts for 3-25 wt % and the rest accounts for 97-75 wt %, based on the total weight of the resin; and the modified polyester resin composition is suited for use in a halogen-free, heavy metal-free, and volatile organic compound-free polyester-based plastic floor tile excellent in higher resistance to wear and tear, better tensile strength, more preferable resistance to both lit cigarette e and solvents, and particularly being friendliness to environment and not hazardous to health.
    Type: Application
    Filed: February 5, 2018
    Publication date: June 7, 2018
    Applicant: NAN YA PLASTICS CORPORATION
    Inventors: Dein-Run Fung, Ying-Te Huang, Chun-Lai Chen, Tzai-Shing Chen
  • Patent number: 9975214
    Abstract: A polishing pad for surface planarization is made by impregnating a polyester-based fibrous fabric with thermosetting resins to form a porous impregnated material, and heating the porous impregnated material to effect changes in shape of the pores such that an integrally formed polishing pad with hard/soft layers of different hardnesses is obtained; the heated side of the polishing pad has high hardness and high cutting/grinding ability, whereas the unheated side maintains the original tiny pores and low hardness; and the polishing pad can produce a buffering effect when subjected to an external force and in turn apply an evenly distributed force to an article being polished.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: May 22, 2018
    Assignee: NAN YA PLASTICS CORPORATION
    Inventors: Te-Chao Liao, Chun-Che Tsao, Wen-Jui Cheng, Tzai-Shing Chen
  • Patent number: 9951206
    Abstract: A modified polyester resin composition comprises a combination of a PET polyester, a PCT polyester, a CHDM modified copolyester comprising PCTA, PCTG or PETG, and a modified polymer at least comprising TPU or EPDM, wherein the modified polymer accounts for 3-25 wt % and the rest accounts for 97-75 wt %, based on the total weight of the resin; and the modified polyester resin composition is suited for use in a halogen-free, heavy metal-free, and volatile organic compound-free polyester-based plastic floor tile excellent in higher resistance to wear and tear, better tensile strength, more preferable resistance to both lit cigarette e and solvents, and particularly being friendliness to environment and not hazardous to health.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: April 24, 2018
    Assignee: NAN YA PLASTICS CORPORATION
    Inventors: Dein-Run Fung, Ying-Te Huang, Chun-Lai Chen, Tzai-Shing Chen
  • Publication number: 20180002501
    Abstract: A transparent polyester film has low visible light transmittance of 5-50% by JIS K7705 testing standard and a high infrared-blocking rate of at least 90% by JIS R3106 testing standard, which is extruded from a kind of polyester resins obtained from 5-40 wt % of nanoparticle-based thermal insulation slurry and/or 0.005-0.1 wt % of nanoparticle-based black pigment slurry by weight of and to react with the polymerization materials to completely perform an esterification and a polycondensation, wherein the thermal insulation nanoparticle has a chemical formula of CsXNYWO3-ZClC with an average particle size of 10-90 nm and the nanoparticle-based black contains carbon black particles having a particle size of 20-80 nm.
    Type: Application
    Filed: June 27, 2017
    Publication date: January 4, 2018
    Inventors: Te-Chao LIAO, Chun-Che TSAO, Chia-Ho CHENG, Tzai-Shing CHEN
  • Patent number: 9780171
    Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: October 3, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Shing Chen, Wei-Ting Wu, Ming-Hui Chang, Chao-Chun Ning
  • Publication number: 20170065630
    Abstract: Methods and compositions are provided for generating and applying long-lasting therapeutic nitric oxide (NO) gas from the reaction of a least one microencapsulated nitrite salt and an activating volume of an aqueous acidified gel that has sufficient acidity to convert the nitrite salt to a nitric oxide (NO) and further provides a reducing property that retains the NO in bioactive form
    Type: Application
    Filed: September 17, 2016
    Publication date: March 9, 2017
    Inventors: Cheng-Shing Chen, Ferid Murad, Kenneth A. Smith, WIlliam A. Seitz, William J. Merrell, Alexandru T. Balaban
  • Publication number: 20170050288
    Abstract: A polishing pad for surface planarization is made by impregnating a polyester-based fibrous fabric with thermosetting resins to form a porous impregnated material, and heating the porous impregnated material to effect changes in shape of the pores such that an integrally formed polishing pad with hard/soft layers of different hardnesses is obtained; the heated side of the polishing pad has high hardness and high cutting/grinding ability, whereas the unheated side maintains the original tiny pores and low hardness; and the polishing pad can produce a buffering effect when subjected to an external force and in turn apply an evenly distributed force to an article being polished.
    Type: Application
    Filed: August 11, 2016
    Publication date: February 23, 2017
    Inventors: Te-Chao LIAO, Chun-Che TSAO, Wen-Jui CHENG, Tzai-Shing CHEN
  • Publication number: 20160372554
    Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.
    Type: Application
    Filed: August 31, 2016
    Publication date: December 22, 2016
    Inventors: Ming-Shing Chen, Wei-Ting Wu, Ming-Hui Chang, Chao-Chun Ning